132 W Power Field Effect Transistors (FET) 14

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
FDD86250	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	132 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	180 mJ	51 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.022 ohm	8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
FDMS8D8N15C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	132 W	PLASTIC/EPOXY	SWITCHING	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	340 A	102 mJ	85 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	78 ns	-55 Cel	59 ns	MATTE TIN	.0088 ohm	85 A	DUAL	R-PDSO-N5	1	DRAIN			MO-240AA	e3	30	260	9.3 pF
XPH4R714MC,L1XHQ	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	132 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	180 A	138 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.0069 ohm	60 A	DUAL	S-PDSO-F8		DRAIN							685 pF	AEC-Q101
SFP9540	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	132 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	68 A	578 mJ	17 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.2 ohm	17 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
TPH1R104PB	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	132 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	360 A	140 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.00196 ohm	120 A	DUAL	S-PDSO-F8		DRAIN							320 pF	AEC-Q101
TPH1R104PB,L1XHQ	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	132 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	360 A	140 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.00196 ohm	120 A	DUAL	S-PDSO-F8		DRAIN							320 pF	AEC-Q101
RFP50N05	Intersil	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	132 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A		50 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Tin/Lead (Sn/Pb)	.022 ohm	50 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
NTMFS4D2N10MDT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	132 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	763 A	486 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.0043 ohm	113 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260	23 pF
XPH4R714MC	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	132 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	180 A	138 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.0069 ohm	60 A	DUAL	S-PDSO-F8		DRAIN							685 pF	AEC-Q101
TW048N65C	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	132 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	103 A			3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON CARBIDE					.065 ohm	40 A	SINGLE	R-PSFM-T3		DRAIN			TO-247				4.4 pF
TW048N65C,S1F(S	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	132 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	103 A			3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON CARBIDE					.065 ohm	40 A	SINGLE	R-PSFM-T3		DRAIN			TO-247				4.4 pF
TPH1R204PL	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	132 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	500 A	127 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.0021 ohm	246 A	DUAL	S-PDSO-F5		DRAIN							93 pF
FMM22-05PF	Littelfuse	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	NO	132 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	2	55 A	750 mJ	13 A	5	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN SILVER COPPER	.27 ohm	13 A	SINGLE	R-PSIP-T5		ISOLATED	Not Qualified	AVALANCHE RATED		e1				UL RECOGNIZED
FMP76-010T	Littelfuse	N-CHANNEL AND P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	NO	132 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	2	300 A	500 mJ	54 A	5	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN SILVER COPPER	.011 ohm	62 A	SINGLE	R-PSIP-T5		ISOLATED	Not Qualified	AVALANCHE RATED		e1				UL RECOGNIZED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.