Toshiba - TPH1R104PB,L1XHQ

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TPH1R104PB,L1XHQ by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TPH1R104PB,L1XHQ
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 132 W; JESD-30 Code: S-PDSO-F8; Package Body Material: PLASTIC/EPOXY;
Datasheet TPH1R104PB,L1XHQ Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 120 A
Maximum Pulsed Drain Current (IDM): 360 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 132 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-F8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .00196 ohm
Avalanche Energy Rating (EAS): 140 mJ
Other Names: 264-TPH1R104PBL1XHQCT
264-TPH1R104PBL1XHQTR
TPH1R104PB,L1XHQ(O
264-TPH1R104PBL1XHQDKR
Maximum Feedback Capacitance (Crss): 320 pF
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 40 V
Reference Standard: AEC-Q101
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