134 W Power Field Effect Transistors (FET) 13

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

SCT3105KLGC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

134 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

24 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

TIN

.137 ohm

24 A

SINGLE

R-PSFM-T3

TO-247

e3

SCT3080ALHRC11

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

134 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

75 A

30 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

TIN

.104 ohm

30 A

SINGLE

R-PSFM-T3

TO-247

e3

10

265

19 pF

AEC-Q101

NTMYS2D2N06CLTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

134 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

900 A

941 mJ

31 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0026 ohm

31 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

25 pF

NTMYS1D3N04CTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

134 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

900 A

1621 mJ

252 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.00115 ohm

252 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

71 pF

NTMYS1D2N04CLTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

134 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

900 A

1359 mJ

258 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0017 ohm

258 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

118 pF

NXH027B120MNF2PTG

Onsemi

N-CHANNEL

COMPLEX

NO

134 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

DEPLETION MODE

3

84 A

23

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.038 ohm

84 A

UPPER

R-XUFM-X23

ISOLATED

64 pF

NVMYS2D2N06CLTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

134 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

900 A

941 mJ

185 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0026 ohm

31 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

AEC-Q101

NVMYS1D3N04CTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

134 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

900 A

1621 mJ

252 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.00115 ohm

252 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

AEC-Q101

NVMYS1D2N04CLTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

134 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

900 A

1359 mJ

258 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0017 ohm

258 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

AEC-Q101

NXH027B120MNF2P2TG

Onsemi

N-CHANNEL

COMPLEX

NO

134 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

3

84 A

23

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.038 ohm

84 A

UPPER

R-XUFM-X23

NVMFWS0D7N04XMT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

134 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

987 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0007 ohm

331 A

DUAL

R-PDSO-F5

DRAIN

NOT SPECIFIED

NOT SPECIFIED

112 pF

AEC-Q101

STD134N4F7AG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

134 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

325 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0035 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

BULK: 2500

TO-252

60 pF

AEC-Q101

IRF840A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

134 W

PLASTIC/EPOXY

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

640 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

134 W

150 Cel

SILICON

100 ns

245 ns

.85 ohm

8 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

75 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.