147 W Power Field Effect Transistors (FET) 46

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BUK9Y8R7-60E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

147 W

ENHANCEMENT MODE

1

86 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

86 A

1

e3

30

260

IPL60R095CFD7AUMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

147 W

PLASTIC/EPOXY

SWITCHING

600 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

97 A

114 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

.095 ohm

25 A

SINGLE

S-PSSO-N4

2A

DRAIN

e3

SIHP12N60E-E3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

147 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

27 A

117 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.38 ohm

12 A

SINGLE

R-PSFM-T3

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

BUK9Y14-80E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

147 W

ENHANCEMENT MODE

1

62 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

62 A

1

e3

30

260

BUK9Y4R4-40E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

147 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

BUK7Y14-80EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

147 W

ENHANCEMENT MODE

1

65 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

65 A

FQB8N60CTM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

147 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

230 mJ

7.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.2 ohm

7.5 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

FQI8N60CTU

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

147 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

230 mJ

7.5 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.2 ohm

7.5 A

SINGLE

R-PSIP-T3

Not Qualified

e3

FQB14N30TM

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

147 W

PLASTIC/EPOXY

SWITCHING

300 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

57.6 A

600 mJ

14.4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.29 ohm

14.4 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

BUK9Y22-100E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

147 W

ENHANCEMENT MODE

1

49 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

49 A

1

e3

30

260

BUK7Y4R4-40EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

147 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

100 A

BUK7Y8R7-60EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

147 W

ENHANCEMENT MODE

1

87 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

87 A

FQP14N30

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

147 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

57.6 A

600 mJ

14.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.29 ohm

14.4 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

NTMFSC012N15MC

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

147 W

PLASTIC/EPOXY

SWITCHING

150 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1067 A

161 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0114 ohm

80 A

DUAL

R-PDSO-F8

DRAIN

9 pF

NTMFS011N15MC

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

147 W

PLASTIC/EPOXY

SWITCHING

150 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

259 A

76.1 mJ

78 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0115 ohm

78 A

DUAL

R-PDSO-F5

1

DRAIN

MO-240AA

e3

30

260

15 pF

FDP7N60NZ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

147 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

26 A

275 mJ

6.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.25 ohm

6.5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

PHB6N60T/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

147 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

28 A

570 mJ

7 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.2 ohm

7 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

PHB10N40T/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

147 W

PLASTIC/EPOXY

SWITCHING

400 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

43 A

520 mJ

10.7 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.55 ohm

10.7 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

PHW8ND50E

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

147 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

34 A

510 mJ

8.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.85 ohm

8.5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

FREDFET, FAST SWITCHING

TO-247

PHB8N50T/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

147 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

35 A

510 mJ

8.7 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.8 ohm

8.7 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

PHP8ND50E

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

147 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

34 A

510 mJ

8.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.85 ohm

8.5 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

FREDFET, FAST SWITCHING

TO-220AB

PHB8ND50E

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

147 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

34 A

510 mJ

8.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.85 ohm

8.5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

FRED FET

BUK7Y4R4-40E,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

147 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

521 A

100 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0044 ohm

100 A

SINGLE

R-PSSO-G4

DRAIN

MO-235

346 pF

AEC-Q101; IEC-60134

BUK9Y4R4-40E

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

147 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

516 A

100 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0044 ohm

100 A

SINGLE

R-PSSO-G4

1

DRAIN

MO-235

e3

30

260

260 pF

AEC-Q101; IEC-60134

BUK7Y22-100EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

147 W

ENHANCEMENT MODE

1

49 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

49 A

BUK7Y4R4-40E

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

147 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

521 A

100 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0044 ohm

100 A

SINGLE

R-PSSO-G4

1

DRAIN

MO-235

e3

346 pF

AEC-Q101; IEC-60134

IPL60R095CFD7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

147 W

PLASTIC/EPOXY

SWITCHING

600 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

97 A

114 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

.095 ohm

25 A

SINGLE

S-PSSO-N4

2A

DRAIN

e3

PSMN2R8-40YSD

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

147 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

4

658 A

452 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0028 ohm

160 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED, HIGH RELIABILITY

MO-235

e3

30

260

337 pF

IEC-60134

PSMN9R8-100YSF

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

147 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

244 A

107.8 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0114 ohm

61 A

SINGLE

R-PSSO-G4

DRAIN

AVALANCHE RATED

MO-235

16 pF

IEC-60134

PSMN2R8-40YSDX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

147 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

4

658 A

452 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0028 ohm

160 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED, HIGH RELIABILITY

MO-235

e3

30

260

337 pF

IEC-60134

NP89N04PUK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

147 W

1

90 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

NOT SPECIFIED

NOT SPECIFIED

NP90N055VUK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

147 W

1

90 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

NOT SPECIFIED

NOT SPECIFIED

NP90N04VUK-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

147 W

1

90 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

NOT SPECIFIED

NOT SPECIFIED

NP89N055MUK-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

147 W

1

90 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

NOT SPECIFIED

NOT SPECIFIED

NP90N055VUK-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

147 W

1

90 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

NOT SPECIFIED

NOT SPECIFIED

NP90N04VUK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

147 W

1

90 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

NOT SPECIFIED

NOT SPECIFIED

NP89N04PUK-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

147 W

1

90 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

NOT SPECIFIED

NOT SPECIFIED

NP90N04VDK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

147 W

1

90 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

NOT SPECIFIED

NOT SPECIFIED

N0439N-S19-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

147 W

1

90 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

NOT SPECIFIED

NOT SPECIFIED

NP89N055PUK-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

147 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.004 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

NP90N04VDK-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

147 W

1

90 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

NOT SPECIFIED

NOT SPECIFIED

NP89N055PUK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

147 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.004 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

NP89N055NUK-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

147 W

1

90 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

NOT SPECIFIED

NOT SPECIFIED

SSW7N60A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

147 W

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

28 A

535 mJ

7 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.2 ohm

7 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

SSI7N60A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

147 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

535 mJ

7 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.2 ohm

7 A

SINGLE

R-PSIP-T3

Not Qualified

SSP7N60A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

147 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

535 mJ

7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.2 ohm

7 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.