Image shown is a representation only.
| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | NP89N055PUK-E1-AY |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 147 W; Maximum Drain Current (ID): 90 A; Case Connection: DRAIN; |
| Datasheet | NP89N055PUK-E1-AY Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 90 A |
| Maximum Pulsed Drain Current (IDM): | 360 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | YES |
| No. of Terminals: | 2 |
| Maximum Power Dissipation (Abs): | 147 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .004 ohm |
| Other Names: |
NP89N055PUK-E1-AY-ND 559-NP89N055PUK-E1-AYTR 559-NP89N055PUK-E1-AYDKR 559-NP89N055PUK-E1-AYCT -1161-NP89N055PUK-E1-AYCT |
| JEDEC-95 Code: | TO-263AB |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 55 V |
| Reference Standard: | AEC-Q101 |
| Maximum Drain Current (Abs) (ID): | 90 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
