148 W Power Field Effect Transistors (FET) 13

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

PSMN016-100BS,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

148 W

ENHANCEMENT MODE

1

57 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

57 A

1

e3

30

245

PSMN012-80BS,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

148 W

ENHANCEMENT MODE

1

74 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

74 A

1

e3

30

245

NVH4L075N065SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

148 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

83 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

-55 Cel

.085 ohm

38 A

SINGLE

R-PSFM-T4

TO-247

NOT SPECIFIED

NOT SPECIFIED

9 pF

AEC-Q101

PSMN016-100PS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

148 W

ENHANCEMENT MODE

1

96 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

96 A

e3

PSMN4R5-40BS,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

148 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

245

PSMN012-80PS

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

148 W

PLASTIC/EPOXY

SWITCHING

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

295 A

100 mJ

74 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.011 ohm

74 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

TO-220AB

e3

PSMN012-80PS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

148 W

ENHANCEMENT MODE

1

74 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

74 A

1

e3

PSMN4R5-40PS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

148 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

100 A

1

e3

PSMN016-100BS

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

148 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

230 A

101 mJ

57 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.016 ohm

57 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

PSMN4R5-40PS

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

148 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

545 A

152 mJ

100 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0046 ohm

100 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

TO-220AB

e3

NP80N06DLC

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

148 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

80 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.015 ohm

80 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-262AA

NP80N06ELC

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

148 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.015 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

NP80N06CLC

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

148 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.015 ohm

80 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.