NVH4L075N065SC1 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NVH4L075N065SC1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 148 W; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING;
Datasheet	NVH4L075N065SC1 Datasheet
In Stock	2,165

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	38 A
Maximum Pulsed Drain Current (IDM):	120 A
Surface Mount:	NO
No. of Terminals:	4
Maximum Power Dissipation (Abs):	148 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain-Source On Resistance:	.085 ohm
Avalanche Energy Rating (EAS):	83 mJ
Maximum Feedback Capacitance (Crss):	9 pF
JEDEC-95 Code:	TO-247
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	650 V
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,165	$6.880	$14,895.200

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