15 W Power Field Effect Transistors (FET) 111

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IRHE9110

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

9.2 A

75 mJ

2.3 A

18

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.1 ohm

2.3 A

DUAL

R-CDSO-F18

Not Qualified

e0

5961-99-801-1096

Infineon Technologies

N-CHANNEL

SINGLE

NO

15 W

ENHANCEMENT MODE

1

2.25 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.25 A

IRHE93110

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

9.2 A

75 mJ

2.3 A

18

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.1 ohm

2.3 A

DUAL

R-CDSO-F18

Not Qualified

e0

IRHE3110

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

14 A

68 mJ

3.5 A

18

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.69 ohm

3.5 A

QUAD

R-CQCC-N18

SOURCE

Not Qualified

HIGH RELIABILITY

e0

IRHF3110

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

15 W

METAL

SWITCHING

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

14 A

68 mJ

3.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.69 ohm

3.5 A

BOTTOM

O-MBCY-W3

Not Qualified

TO-205AF

e0

IRFF9110

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

15 W

METAL

SWITCHING

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

10 A

87 mJ

2.5 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.38 ohm

2.5 A

BOTTOM

O-MBCY-W3

Not Qualified

TO-205AF

e0

JANTXV2N6784U

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

9 A

20 mJ

2.25 A

15

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.725 ohm

2.25 A

QUAD

R-CQCC-N15

SOURCE

Qualified

e0

MIL-19500/556

IRFF210SCS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

15 W

METAL

SWITCHING

200 V

WIRE

ROUND

ENHANCEMENT MODE

1

9 A

48 mJ

2.25 A

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

35 ns

-55 Cel

50 ns

1.6 ohm

2.25 A

BOTTOM

O-MBCY-W3

DRAIN

HIGH RELIABILITY

TO-205AF

NOT SPECIFIED

NOT SPECIFIED

JANTXV2N6786

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

15 W

METAL

SWITCHING

400 V

WIRE

ROUND

ENHANCEMENT MODE

1

5.5 A

.82 mJ

1.2 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

4.15 ohm

1.25 A

BOTTOM

O-MBCY-W3

Qualified

AVALANCHE RATED

TO-205AF

e0

MIL-19500/556

JANTX2N6782U

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

14 A

7 mJ

3.5 A

15

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.69 ohm

3.5 A

QUAD

R-CQCC-N15

SOURCE

Qualified

e0

MIL-19500/556

JANTXV2N6786U

Infineon Technologies

N-CHANNEL

SINGLE

YES

15 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

400 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

1.25 A

18

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3.6 ohm

1.25 A

QUAD

R-CQCC-N18

SOURCE

Qualified

e0

MILITARY STANDARD (USA)

JANTX2N6784

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

15 W

METAL

SWITCHING

200 V

WIRE

ROUND

ENHANCEMENT MODE

1

9 A

48 mJ

2.25 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.725 ohm

2.25 A

BOTTOM

O-MBCY-W3

Qualified

AVALANCHE RATED

TO-205AF

e0

MIL-19500/556

JANTX2N6786U

Infineon Technologies

N-CHANNEL

SINGLE

YES

15 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

400 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

1.25 A

18

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3.6 ohm

1.25 A

QUAD

R-CQCC-N18

SOURCE

Qualified

e0

MILITARY STANDARD (USA)

IRFF014

Infineon Technologies

N-CHANNEL

SINGLE

NO

15 W

METAL

60 V

WIRE

ROUND

ENHANCEMENT MODE

1

25 A

6.3 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

2 ohm

6.3 A

BOTTOM

O-MBCY-W3

Not Qualified

TO-205AF

e0

IRFF9010

Infineon Technologies

P-CHANNEL

SINGLE

NO

15 W

METAL

50 V

WIRE

ROUND

ENHANCEMENT MODE

1

16 A

4 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.5 ohm

4 A

BOTTOM

O-MBCY-W3

Not Qualified

TO-205AF

e0

IRFF9210

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

15 W

METAL

SWITCHING

200 V

WIRE

ROUND

ENHANCEMENT MODE

1

6 A

72 mJ

1.5 A

3

CYLINDRICAL

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3.45 ohm

1.5 A

BOTTOM

O-MBCY-W3

Not Qualified

TO-205AF

e0

IRF6710S2TR1PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

100 A

24 mJ

12 A

2

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.0059 ohm

12 A

BOTTOM

R-XBCC-N2

DRAIN

Not Qualified

e1

IRF6710S2TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

100 A

24 mJ

12 A

2

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0059 ohm

12 A

BOTTOM

R-XBCC-N2

1

DRAIN

Not Qualified

JANTX2N6786

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

15 W

METAL

SWITCHING

400 V

WIRE

ROUND

ENHANCEMENT MODE

1

5.5 A

.82 mJ

1.2 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

4.15 ohm

1.25 A

BOTTOM

O-MBCY-W3

Qualified

AVALANCHE RATED

TO-205AF

e0

MIL-19500/556

JANTX2N6784U

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

9 A

20 mJ

2.25 A

15

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.725 ohm

2.25 A

QUAD

R-CQCC-N15

SOURCE

Qualified

e0

MIL-19500/556

JANTXV2N6784

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

15 W

METAL

SWITCHING

200 V

WIRE

ROUND

ENHANCEMENT MODE

1

9 A

48 mJ

2.25 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.725 ohm

2.25 A

BOTTOM

O-MBCY-W3

Qualified

AVALANCHE RATED

TO-205AF

e0

MIL-19500/556

BUK6D43-40P

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 W

PLASTIC/EPOXY

SWITCHING

40 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

56 A

29.7 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.043 ohm

14 A

DUAL

S-PDSO-N6

1

DRAIN

e3

30

260

91 pF

AEC-Q101; IEC-60134

TPCC8067-H(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

15 W

ENHANCEMENT MODE

1

9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

9 A

TPCC8067-H(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

15 W

ENHANCEMENT MODE

1

9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

9 A

2SK1768

Toshiba

N-CHANNEL

SINGLE

NO

15 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

2SK1769

Toshiba

N-CHANNEL

SINGLE

NO

15 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

FS2KMJ-3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

15 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

8 A

2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.81 ohm

2 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

HAT2142H-EL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

10 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.051 ohm

10 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

20

260

HAT2139H-EL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

20 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.015 ohm

20 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

20

260

RQA0009SXTL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 W

PLASTIC/EPOXY

16 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

3.2 A

SINGLE

R-PSSO-F3

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UPA2706TP-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

48 A

12.1 mJ

20 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.029 ohm

12 A

DUAL

R-PDSO-G8

Not Qualified

10

260

RQA0009TXDQS#H1

Renesas Electronics

N-CHANNEL

SINGLE

YES

15 W

1

3.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.2 A

NOT SPECIFIED

NOT SPECIFIED

2SK802

Renesas Electronics

N-CHANNEL

SINGLE

NO

15 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

HAT2116H-EL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

30 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0153 ohm

30 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

20

260

HAT2201WP-EL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

60 A

15 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

15 A

DUAL

R-PDSO-N5

1

DRAIN

Not Qualified

20

260

HAT2175H-EL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

15 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.046 ohm

15 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

20

260

HAT2285WP-EL-E

Renesas Electronics

N-CHANNEL

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

YES

15 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

56 A

22 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.04 ohm

14 A

DUAL

R-PDSO-N6

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FS10KMH-03

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

15 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.141 ohm

10 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

FS5ASJ-06F-T13

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.19 ohm

5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

2SK701

Renesas Electronics

N-CHANNEL

SINGLE

NO

15 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

2 A

e0

RJJ0101DPD-00-J2

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 W

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

5 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.093 ohm

5 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

HAT2116H

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

30 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0153 ohm

30 A

SINGLE

R-PSSO-G4

DRAIN

Not Qualified

2SK700

Renesas Electronics

N-CHANNEL

SINGLE

NO

15 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

2 A

e0

2SK699

Renesas Electronics

N-CHANNEL

SINGLE

NO

15 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

2 A

e0

UPA2706TP-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

15 W

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

NOT SPECIFIED

NOT SPECIFIED

HAT2168N-EL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

30 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

30 A

DUAL

R-PDSO-G8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FS5ASJ-06F

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.19 ohm

5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

UPA2706TP

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

48 A

12.1 mJ

20 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.029 ohm

12 A

DUAL

R-PDSO-G8

1

Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.