15 W Power Field Effect Transistors (FET) 111

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
BUK6D43-40PX	Nexperia	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	15 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	56 A	29.7 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.043 ohm	14 A	DUAL	S-PDSO-N6	1	DRAIN				e3	30	260	91 pF	AEC-Q101; IEC-60134
JANTX2N6782	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	15 W	METAL	SWITCHING	100 V	WIRE	ROUND	ENHANCEMENT MODE	1	14 A	68 mJ	3.5 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.69 ohm	3.5 A	BOTTOM	O-MBCY-W3			Qualified	AVALANCHE RATED	TO-205AF	e0				MIL-19500/556
JANTXV2N6782	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	15 W	METAL	SWITCHING	100 V	WIRE	ROUND	ENHANCEMENT MODE	1	14 A	68 mJ	3.5 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.69 ohm	3.5 A	BOTTOM	O-MBCY-W3			Qualified	AVALANCHE RATED	TO-205AF	e0				MIL-19500/556
IRFF110	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	15 W	METAL	SWITCHING	100 V	WIRE	ROUND	ENHANCEMENT MODE	1	14 A	68 mJ	3.5 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.69 ohm	3.5 A	BOTTOM	O-MBCY-W3			Not Qualified	AVALANCHE RATED	TO-205AF	e0
DN2535N5-G	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	15 W	PLASTIC/EPOXY	SWITCHING		THROUGH-HOLE	RECTANGULAR	DEPLETION MODE	1	.5 A			3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	25 ns	-55 Cel	35 ns	MATTE TIN	25 ohm	.5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LOW THRESHOLD	TO-220AB	e3			5 pF
IRHE7110	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	15 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	14 A	68 mJ	3.5 A	18	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	45 ns	-55 Cel	80 ns	TIN LEAD	.69 ohm	3.5 A	QUAD	R-CQCC-N18		SOURCE	Not Qualified	HIGH RELIABILITY		e0				RH - 100K Rad(Si)
JANTXV2N6782U	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	15 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	14 A	7 mJ	3.5 A	15	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.69 ohm	3.5 A	QUAD	R-CQCC-N15		SOURCE	Qualified			e0				MIL-19500/556
IRFF310	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	15 W	METAL	SWITCHING	400 V	WIRE	ROUND	ENHANCEMENT MODE	1	5.5 A	.82 mJ	1.25 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	4.15 ohm	1.25 A	BOTTOM	O-MBCY-W3			Not Qualified	AVALANCHE RATED	TO-205AF	e0
RSD050N06TL	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	15 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A		5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN COPPER	.14 ohm	5 A	SINGLE	R-PSSO-G2	1		Not Qualified			e2	10	260
DN2540N5-G	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	15 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	DEPLETION MODE	1	.5 A			3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	25 ns	-55 Cel	35 ns	MATTE TIN	25 ohm	.5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3			5 pF
HAT2168H-EL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	15 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.0135 ohm	30 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified				20	260
IRFF210	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	15 W	METAL	SWITCHING	200 V	WIRE	ROUND	ENHANCEMENT MODE	1	9 A	48 mJ	2.25 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	35 ns	-55 Cel	50 ns	TIN LEAD	1.6 ohm	2.25 A	BOTTOM	O-MBCY-W3		DRAIN	Not Qualified	HIGH RELIABILITY	TO-205AF	e0
SFT1431-W	Onsemi	N-CHANNEL	SINGLE	NO	15 W						ENHANCEMENT MODE	1			11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN BISMUTH		11 A								e6
TM3055B(TP-FA)	Onsemi	N-CHANNEL	SINGLE	YES	15 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							8 A
SFT1431(TP-FA)	Onsemi	N-CHANNEL	SINGLE	YES	15 W						ENHANCEMENT MODE	1			11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							11 A
SFT1427(TP-FA)	Onsemi	N-CHANNEL	SINGLE	YES	15 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							7 A
TM3055B(TP)	Onsemi	N-CHANNEL	SINGLE	NO	15 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							8 A
SFT1431-E	Onsemi	N-CHANNEL	SINGLE	NO	15 W						ENHANCEMENT MODE	1			11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN BISMUTH		11 A								e6
SFT1427(TP)	Onsemi	N-CHANNEL	SINGLE	NO	15 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							7 A
SFT1405(TP)	Onsemi	N-CHANNEL	SINGLE	NO	15 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							10 A
SFT1405(TP-FA)	Onsemi	N-CHANNEL	SINGLE	YES	15 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							10 A
SFT1431-TL-W	Onsemi	N-CHANNEL	SINGLE	NO	15 W						ENHANCEMENT MODE	1			11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN BISMUTH		11 A			1					e6	30	260
SFT1431(TP)	Onsemi	N-CHANNEL	SINGLE	NO	15 W						ENHANCEMENT MODE	1			11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							11 A
2SK3492(TP-FA)	Onsemi	N-CHANNEL	SINGLE	YES	15 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							8 A
2SK3617(TP-FA)	Onsemi	N-CHANNEL	SINGLE	YES	15 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							6 A
2SK3492(TP)	Onsemi	N-CHANNEL	SINGLE	NO	15 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							8 A
2SK3617(TP)	Onsemi	N-CHANNEL	SINGLE	NO	15 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							6 A
SGSP156	STMicroelectronics	N-CHANNEL	SINGLE	NO	15 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR						Tin/Lead (Sn/Pb)		1.5 A								e0
SGSP530	STMicroelectronics	N-CHANNEL	SINGLE	NO	15 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR						Tin/Lead (Sn/Pb)		1.5 A								e0
SGSP142	STMicroelectronics	N-CHANNEL	SINGLE	NO	15 W						ENHANCEMENT MODE	1			.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR						Tin/Lead (Sn/Pb)		.6 A								e0
SGSP154	STMicroelectronics	N-CHANNEL	SINGLE	NO	15 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR						Tin/Lead (Sn/Pb)		1.5 A								e0
SGSP148	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	15 W	METAL	SWITCHING	550 V	WIRE	ROUND	ENHANCEMENT MODE	1	2 A		.5 A	3	CYLINDRICAL		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					30 ohm	.5 A	BOTTOM	O-MBCY-W3		DRAIN			TO-39				13 pF
SGSP149	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	15 W	METAL	SWITCHING	500 V	WIRE	ROUND	ENHANCEMENT MODE	1	2 A		.5 A	3	CYLINDRICAL		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					40 ohm	.5 A	BOTTOM	O-MBCY-W3		DRAIN			TO-39				13 pF
SGSP101	STMicroelectronics	N-CHANNEL	SINGLE	NO	15 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR						Tin/Lead (Sn/Pb)		1.5 A								e0
SGSP102	STMicroelectronics	N-CHANNEL	SINGLE	NO	15 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR						Tin/Lead (Sn/Pb)		1.5 A								e0
SGSP141	STMicroelectronics	N-CHANNEL	SINGLE	NO	15 W						ENHANCEMENT MODE	1			.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR						Tin/Lead (Sn/Pb)		.6 A								e0
SGSP151	STMicroelectronics	N-CHANNEL	SINGLE	NO	15 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR						Tin/Lead (Sn/Pb)		5 A								e0
SGSP155	STMicroelectronics	N-CHANNEL	SINGLE	NO	15 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR						Tin/Lead (Sn/Pb)		1.5 A								e0
SGSP152	STMicroelectronics	N-CHANNEL	SINGLE	NO	15 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR						Tin/Lead (Sn/Pb)		5 A								e0
IRHF593110	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	15 W	METAL	SWITCHING	100 V	WIRE	ROUND	ENHANCEMENT MODE	1	10.4 A	30 mJ	2.6 A	3	CYLINDRICAL	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	1.2 ohm	2.6 A	BOTTOM	O-MBCY-W3			Not Qualified		TO-205AF	e0
IRHF57214SESCS	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	15 W	METAL	SWITCHING	250 V	WIRE	ROUND	ENHANCEMENT MODE	1	8.8 A	19 mJ	2.2 A	3	CYLINDRICAL		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	45 ns	-55 Cel	55 ns		1.55 ohm	2.2 A	BOTTOM	O-MBCY-W3		DRAIN			TO-205AF		NOT SPECIFIED	NOT SPECIFIED		RH - 100K Rad(Si)
IRHF597110SCS	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	15 W	METAL	SWITCHING	100 V	WIRE	ROUND	ENHANCEMENT MODE	1	10.4 A	30 mJ	2.6 A	3	CYLINDRICAL		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	40 ns	-55 Cel	125 ns		1.2 ohm	2.6 A	BOTTOM	O-MBCY-W3		DRAIN			TO-205AF		NOT SPECIFIED	NOT SPECIFIED		MIL-19500
IRHF4110	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	15 W	METAL	SWITCHING	100 V	WIRE	ROUND	ENHANCEMENT MODE	1	14 A	68 mJ	3.5 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.69 ohm	3.5 A	BOTTOM	O-MBCY-W3			Not Qualified		TO-205AF	e0
IRHE4110	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	15 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	14 A	68 mJ	3.5 A	18	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.69 ohm	3.5 A	QUAD	R-CQCC-N18		SOURCE	Not Qualified	HIGH RELIABILITY		e0
IRHF8110	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	15 W	METAL	SWITCHING	100 V	WIRE	ROUND	ENHANCEMENT MODE	1	14 A	68 mJ	3.5 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.69 ohm	3.5 A	BOTTOM	O-MBCY-W3			Not Qualified	RADIATION HARDENED	TO-205AF	e0
IRHF7110	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	15 W	METAL	SWITCHING	100 V	WIRE	ROUND	ENHANCEMENT MODE	1	14 A	68 mJ	3.5 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.69 ohm	3.5 A	BOTTOM	O-MBCY-W3			Not Qualified	RADIATION HARDENED	TO-205AF	e0
IRHF57214SE	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	15 W	METAL	SWITCHING	250 V	WIRE	ROUND	ENHANCEMENT MODE	1	8.8 A	19 mJ	2.2 A	3	CYLINDRICAL		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	45 ns	-55 Cel	55 ns	TIN LEAD	1.55 ohm	2.2 A	BOTTOM	O-MBCY-W3		DRAIN	Not Qualified		TO-205AF	e0				RH - 100K Rad(Si)
IRHF597110	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	15 W	METAL	SWITCHING	100 V	WIRE	ROUND	ENHANCEMENT MODE	1	10.4 A	30 mJ	2.6 A	3	CYLINDRICAL	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	40 ns	-55 Cel	125 ns	TIN LEAD	1.2 ohm	2.6 A	BOTTOM	O-MBCY-W3		DRAIN	Not Qualified		TO-205AF	e0				RH - 100K Rad(Si)

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.