Infineon Technologies - JANTXV2N6782U

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JANTXV2N6782U by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number JANTXV2N6782U
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Terminal Form: NO LEAD; Maximum Pulsed Drain Current (IDM): 14 A;
Datasheet JANTXV2N6782U Datasheet
In Stock308
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3.5 A
Maximum Pulsed Drain Current (IDM): 14 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 15
Maximum Power Dissipation (Abs): 15 W
Terminal Position: QUAD
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-CQCC-N15
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
Maximum Drain-Source On Resistance: .69 ohm
Avalanche Energy Rating (EAS): 7 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 100 V
Qualification: Qualified
Reference Standard: MIL-19500/556
Maximum Drain Current (Abs) (ID): 3.5 A
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