208 W Power Field Effect Transistors (FET) 176

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IRHMK57260SE	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	208 W	UNSPECIFIED	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	256 mJ	45 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.044 ohm	45 A	SINGLE	R-XSSO-G3		ISOLATED	Not Qualified			e0
JANSF2N7550T1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	480 mJ	45 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.05 ohm	45 A	SINGLE	S-CSFM-P3		ISOLATED	Not Qualified		TO-254AA	e0				MIL-19500/713
IRHMK593160	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	UNSPECIFIED	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A	480 mJ	45 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.05 ohm	45 A	SINGLE	R-XSIP-T3			Not Qualified		TO-254AA	e0
IRHMS593Z60	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	UNSPECIFIED	SWITCHING	30 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	1250 mJ	45 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	210 ns	-55 Cel	180 ns	TIN LEAD	.014 ohm	45 A	SINGLE	S-XSFM-P3			Not Qualified	HIGH RELIABILITY	TO-254AA	e0				RH - 300K Rad(Si)
IRHMS54064	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	824 mJ	45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0066 ohm	45 A	SINGLE	S-CSFM-P3		ISOLATED	Not Qualified		TO-254AA	e0
IRHMK57160	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	208 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	180 A		45 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.013 ohm	45 A	SINGLE	S-CSSO-G3		ISOLATED	Not Qualified	RADIATION HARDENED		e0
IRHMS57160	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	493 mJ	45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.013 ohm	45 A	SINGLE	S-CSFM-P3		ISOLATED	Not Qualified	RADIATION HARDENED	TO-254AA	e0
BUY25CS45B-01	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	UNSPECIFIED		250 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	380 mJ	45 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	145 ns	-55 Cel	155 ns		.05 ohm	45 A	SINGLE	S-XSFM-P3				HIGH RELIABILITY	TO-254AA				20 pF	RH - 100K Rad(Si)
JANSF2N7586T1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	UNSPECIFIED		250 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	251 mJ	45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.041 ohm	45 A	SINGLE	S-XSFM-P3		ISOLATED	Qualified		TO-254AA					MIL-19500
IRHMB67260	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	UNSPECIFIED	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	344 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	165 ns	-55 Cel	115 ns		.029 ohm	45 A	SINGLE	S-XSFM-P3		ISOLATED			TO-254AA				14 pF	MIL-19500; MIL-STD-750; RH - 100K Rad(Si)
JANSF2N7584T1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	UNSPECIFIED	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	344 mJ	45 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	165 ns	-55 Cel	115 ns		.029 ohm	45 A	SINGLE	S-XSFM-P3		ISOLATED	Qualified		TO-254AA					MIL-19500; RH - 300K Rad(Si)
IRHMS67164	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	UNSPECIFIED	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A	353 mJ	45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.019 ohm	45 A	SINGLE	R-XSFM-T3		ISOLATED	Not Qualified		TO-254AA	e0
IRHMB57064	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A	824 mJ	45 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.006 ohm	45 A	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified			e0
IRHMS597064	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	UNSPECIFIED	SWITCHING	60 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	890 mJ	45 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN LEAD	.017 ohm	45 A	SINGLE	S-XSFM-P3		ISOLATED	Not Qualified		TO-254AA	e0
IRHMS54160	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	493 mJ	45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.013 ohm	45 A	SINGLE	S-CSFM-P3		ISOLATED	Not Qualified	RADIATION HARDENED	TO-254AA	e0
JANSF2N7524T1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	UNSPECIFIED	SWITCHING	60 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	890 mJ	45 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			.017 ohm	45 A	SINGLE	S-XSFM-P3		ISOLATED	Qualified		TO-254AA					MIL-19500; RH - 300K Rad(Si)
IRHMS55064	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	UNSPECIFIED	SWITCHING	60 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	824 mJ	45 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	160 ns	-55 Cel	120 ns		.0076 ohm	45 A	SINGLE	S-XSFM-P3		ISOLATED			TO-254AA					RH - 500K Rad(Si)
IRHMK58160	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	208 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	GULL WING	SQUARE	ENHANCEMENT MODE	1		493 mJ	45 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.014 ohm	45 A	SINGLE	S-CSSO-G3		ISOLATED	Not Qualified	RADIATION HARDENED		e0
JANSG2N7470T1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	824 mJ	45 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	160 ns	-55 Cel	120 ns	TIN LEAD	.0066 ohm	45 A	SINGLE	S-CSFM-P3		ISOLATED	Qualified		TO-254AA	e0				MIL-19500
IRHMS593Z60SCS	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	UNSPECIFIED	SWITCHING	30 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	1250 mJ	45 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	210 ns	-55 Cel	180 ns		.014 ohm	45 A	SINGLE	S-XSFM-P3				HIGH RELIABILITY	TO-254AA		NOT SPECIFIED	NOT SPECIFIED		RH - 300K Rad(Si)
IRHMS54Z60	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	UNSPECIFIED	SWITCHING	30 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	1250 mJ	45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0045 ohm	45 A	SINGLE	S-XSFM-P3		ISOLATED	Not Qualified	FAST SWITCHING	TO-254AA	e0
BUY25CS45B-01(ES)	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	UNSPECIFIED		250 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	380 mJ	45 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	145 ns	-55 Cel	155 ns		.05 ohm	45 A	SINGLE	S-XSFM-P3				HIGH RELIABILITY	TO-254AA				20 pF	RH - 100K Rad(Si)
JANSH2N7470T1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	824 mJ	45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	160 ns	-55 Cel	120 ns	TIN LEAD	.0066 ohm	45 A	SINGLE	S-CSFM-P3		ISOLATED	Qualified		TO-254AA	e0				MIL-19500
IRHMS57163SE	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	UNSPECIFIED	SWITCHING	130 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A	432 mJ	45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0145 ohm	45 A	SINGLE	R-XSFM-T3		ISOLATED	Not Qualified		TO-254AA	e0
JANSF2N7549T1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	UNSPECIFIED	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	120 A	332 mJ	30 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.103 ohm	30 A	SINGLE	S-XSFM-P3		ISOLATED	Qualified		TO-254AA					MIL-19500; RH - 300K Rad(Si)
JANSR2N7652T1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	UNSPECIFIED	SWITCHING	60 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	5600 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	129 ns	-55 Cel	197 ns		.007 ohm	45 A	SINGLE	S-XSFM-P3		ISOLATED			TO-254AA				30 pF	MIL-19500; MIL-STD-750; RH - 100K Rad(Si)
IRHMB6S7260	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	METAL	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	344 mJ	45 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	100 ns	-55 Cel	103 ns		.029 ohm	35 A	SINGLE	S-MSIP-P3		ISOLATED		HIGH RELIABILITY	TO-254AA					RH - 100K Rad(Si)
JANSF2N7524D4	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	208 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	890 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	185 ns	-55 Cel	135 ns		.018 ohm	45 A	SINGLE	S-CSSO-P3		ISOLATED			TO-254AA				310 pF	MIL-19500; MIL-STD-750; RH - 300K Rad(Si)
IRHMS597260	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	METAL	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	120 A	332 mJ	30 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	135 ns	-55 Cel	220 ns	TIN LEAD	.103 ohm	30 A	SINGLE	S-MSFM-P3		ISOLATED	Not Qualified	HIGH RELIABILITY	TO-254AA	e0				RH - 100K Rad(Si)
IRHMS6S3264	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	UNSPECIFIED	SWITCHING	250 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	251 mJ	45 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	165 ns	-55 Cel	115 ns		.041 ohm	45 A	SINGLE	S-XSFM-P3		ISOLATED		HIGH RELIABILITY	TO-254AA					RH - 300K Rad(Si)
IRHMS6S7264SCS	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	UNSPECIFIED	SWITCHING	250 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	251 mJ	45 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	165 ns	-55 Cel	115 ns		.041 ohm	45 A	SINGLE	S-XSFM-P3		ISOLATED		HIGH RELIABILITY	TO-254AA					RH - 100K Rad(Si)
JANSR2N7586T1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	UNSPECIFIED		250 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	251 mJ	45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.041 ohm	45 A	SINGLE	S-XSFM-P3		ISOLATED	Qualified		TO-254AA					MIL-19500
IRHMS53Z60	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	UNSPECIFIED	SWITCHING	30 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	1250 mJ	45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0045 ohm	45 A	SINGLE	S-XSFM-P3		ISOLATED	Not Qualified	FAST SWITCHING	TO-254AA	e0
JANSF2N7470T1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	824 mJ	45 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	160 ns	-55 Cel	120 ns	TIN LEAD	.0066 ohm	45 A	SINGLE	S-CSFM-P3		ISOLATED	Qualified		TO-254AA	e0				MIL-19500
BUY15CS45B-01(P)	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	UNSPECIFIED		150 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	380 mJ	45 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	140 ns	-55 Cel	160 ns		.027 ohm	45 A	SINGLE	S-XSFM-P3					TO-254AA		NOT SPECIFIED	NOT SPECIFIED	100 pF	EUROPEAN SPACE AGENCY; RH - 100K Rad(Si)
IRHMS9A7064	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	UNSPECIFIED	SWITCHING	60 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	5600 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	129 ns	-55 Cel	197 ns		.007 ohm	45 A	SINGLE	S-XSFM-P3		ISOLATED			TO-254AA				30 pF	MIL-19500; MIL-STD-750; RH - 100K Rad(Si)
IRHLMS797064	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	UNSPECIFIED	SWITCHING	60 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	935 mJ	45 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	454 ns	-55 Cel	258 ns		.018 ohm	45 A	SINGLE	S-XSFM-P3		ISOLATED			TO-254AA				350 pF	MIL-19500; RH - 100K Rad(Si)
IRHMB54064	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A	824 mJ	45 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.006 ohm	45 A	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified			e0
IRHMS67260PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	UNSPECIFIED	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	344 mJ	45 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	165 ns	-55 Cel	115 ns		.029 ohm	45 A	SINGLE	S-XSFM-P3		ISOLATED			TO-254AA		NOT SPECIFIED	NOT SPECIFIED		MIL-19500; RH - 100K Rad(Si)
JANSR2N7470T1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	824 mJ	45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	160 ns	-55 Cel	120 ns	TIN LEAD	.0066 ohm	45 A	SINGLE	S-CSFM-P3		ISOLATED	Qualified	RADIATION HARDENED	TO-254AA	e0				MIL-19500
IRHMS63160	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	512 mJ	45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.011 ohm	45 A	SINGLE	S-CSFM-P3	1	ISOLATED	Not Qualified		TO-254AA
IRHMS57260SE	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	SQUARE	ENHANCEMENT MODE	1	180 A	256 mJ	45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.044 ohm	45 A	SINGLE	S-PSFM-T3		ISOLATED	Not Qualified		TO-254AA	e0				MIL-19500/685
IRHMS6S7260SCS	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	UNSPECIFIED	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	344 mJ	45 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	100 ns	-55 Cel	103 ns		.029 ohm	35 A	SINGLE	S-XSFM-P3		ISOLATED			TO-254AA					RH - 100K Rad(Si)
BUY15CS45B-01	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	UNSPECIFIED		150 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	380 mJ	45 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	140 ns	-55 Cel	160 ns		.027 ohm	45 A	SINGLE	S-XSFM-P3					TO-254AA				100 pF	EUROPEAN SPACE AGENCY; RH - 100K Rad(Si)
IRHMK54160	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	208 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	180 A		45 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.013 ohm	45 A	SINGLE	S-CSSO-G3		ISOLATED	Not Qualified	RADIATION HARDENED		e0
IRHMS63260	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	UNSPECIFIED	SWITCHING	200 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	344 mJ	45 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	165 ns	-55 Cel	115 ns		.029 ohm	45 A	SINGLE	S-XSFM-P3		ISOLATED			TO-254AA					MIL-19500; RH - 300K Rad(Si)
IRHMS53160	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	493 mJ	45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.013 ohm	45 A	SINGLE	S-CSFM-P3		ISOLATED	Not Qualified	RADIATION HARDENED	TO-254AA	e0
IRHMS6S3160	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	208 W	PLASTIC/EPOXY	SWITCHING	100 V	PIN/PEG	SQUARE	ENHANCEMENT MODE	1	180 A	512 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	165 ns	-55 Cel	115 ns		.011 ohm	45 A	SINGLE	S-XSFM-P3		ISOLATED			TO-254AA				20.5 pF	MIL-19500; MIL-STD-750; RH - 300K Rad(Si)

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.