208 W Power Field Effect Transistors (FET) 176

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

JANSH2N7471T1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

493 mJ

45 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

TIN LEAD

.014 ohm

45 A

SINGLE

S-CSFM-P3

ISOLATED

Qualified

RADIATION HARDENED

TO-254AA

e0

MIL-19500/698

JANSR2N7524D4

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

208 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

890 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

185 ns

-55 Cel

135 ns

.018 ohm

45 A

SINGLE

S-CSSO-P3

ISOLATED

TO-254AA

310 pF

MIL-19500; MIL-STD-750; RH - 100K Rad(Si)

IRHMS593260

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

METAL

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

120 A

332 mJ

30 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

135 ns

-55 Cel

220 ns

TIN LEAD

.103 ohm

30 A

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-254AA

e0

RH - 300K Rad(Si)

IRHMB6S3260

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

METAL

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

344 mJ

45 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

100 ns

-55 Cel

103 ns

.029 ohm

35 A

SINGLE

S-MSIP-P3

ISOLATED

HIGH RELIABILITY

TO-254AA

RH - 300K Rad(Si)

IRHMB57Z60

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

UNSPECIFIED

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

1250 mJ

45 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0045 ohm

45 A

SINGLE

R-XSIP-T3

ISOLATED

Not Qualified

e0

IRHMS67260

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

UNSPECIFIED

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

344 mJ

45 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

165 ns

-55 Cel

115 ns

TIN LEAD

.029 ohm

45 A

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

TO-254AA

e0

MIL-19500; RH - 100K Rad(Si)

IRHMB63260

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

UNSPECIFIED

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

344 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

165 ns

-55 Cel

115 ns

.029 ohm

45 A

SINGLE

S-XSFM-P3

ISOLATED

TO-254AA

14 pF

MIL-19500; MIL-STD-750; RH - 300K Rad(Si)

IRHMS58Z60

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

UNSPECIFIED

SWITCHING

30 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

1250 mJ

45 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0045 ohm

45 A

SINGLE

S-XSFM-P3

ISOLATED

Not Qualified

FAST SWITCHING

TO-254AA

e0

JANSR2N7550D1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

208 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

GULL WING

SQUARE

ENHANCEMENT MODE

1

180 A

480 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

135 ns

-55 Cel

220 ns

.05 ohm

45 A

SINGLE

S-CSSO-G3

TO-254AA

115 pF

MIL-19500; MIL-STD-750; RH - 100K Rad(Si)

JANSF2N7471T1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

493 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

160 ns

-55 Cel

125 ns

.014 ohm

45 A

SINGLE

S-CSFM-P3

ISOLATED

Qualified

TO-254AA

35 pF

MIL-19500; RH - 300K Rad(Si)

IRHMS57264SE

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

SQUARE

ENHANCEMENT MODE

1

148 A

258 mJ

37 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.061 ohm

37 A

SINGLE

S-PSFM-T3

ISOLATED

Not Qualified

TO-254AA

e0

MIL-19500/685

IRHMS63264

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

250 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

140 A

251 mJ

45 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.041 ohm

45 A

SINGLE

S-CSFM-P3

ISOLATED

Not Qualified

TO-254AA

e0

JANSF2N7523T1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

UNSPECIFIED

SWITCHING

30 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

1250 mJ

45 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

210 ns

-55 Cel

180 ns

.014 ohm

45 A

SINGLE

S-XSFM-P3

HIGH RELIABILITY

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

MIL-19500; RH - 300K Rad(Si)

JANSF2N7652T1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

UNSPECIFIED

SWITCHING

60 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

5600 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

129 ns

-55 Cel

197 ns

.007 ohm

45 A

SINGLE

S-XSFM-P3

ISOLATED

TO-254AA

30 pF

MIL-19500; MIL-STD-750; RH - 300K Rad(Si)

IRHMB53064

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

824 mJ

45 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.006 ohm

45 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

e0

IRHMS6S3260

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

UNSPECIFIED

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

344 mJ

45 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

100 ns

-55 Cel

103 ns

.029 ohm

45 A

SINGLE

S-XSFM-P3

ISOLATED

TO-254AA

RH - 300K Rad(Si)

IRHMS593260SCS

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

METAL

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

120 A

332 mJ

30 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

135 ns

-55 Cel

220 ns

.103 ohm

30 A

SINGLE

S-MSFM-P3

ISOLATED

HIGH RELIABILITY

TO-254AA

RH - 300K Rad(Si)

IRHMJ57260SE

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

208 W

UNSPECIFIED

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

140 A

320 mJ

35 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.049 ohm

35 A

SINGLE

R-XSSO-G3

ISOLATED

Not Qualified

e0

IRHMS6S7160

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

PLASTIC/EPOXY

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

512 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

165 ns

-55 Cel

115 ns

.011 ohm

45 A

SINGLE

S-XSFM-P3

ISOLATED

TO-254AA

20.5 pF

MIL-19500; MIL-STD-750; RH - 100K Rad(Si)

IRHMS67260SCS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

UNSPECIFIED

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

344 mJ

45 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

165 ns

-55 Cel

115 ns

.029 ohm

45 A

SINGLE

S-XSFM-P3

ISOLATED

TO-254AA

MIL-19500

IRHMK53160

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

208 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

GULL WING

SQUARE

ENHANCEMENT MODE

1

180 A

45 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.013 ohm

45 A

SINGLE

S-CSSO-G3

ISOLATED

Not Qualified

RADIATION HARDENED

e0

IRHMS6S7160SCS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

PLASTIC/EPOXY

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

512 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

165 ns

-55 Cel

115 ns

.011 ohm

45 A

SINGLE

S-XSFM-P3

ISOLATED

TO-254AA

20.5 pF

MIL-19500; MIL-STD-750; RH - 100K Rad(Si)

ISC030N10NM6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

208 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

716 A

988 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.003 ohm

179 A

DUAL

R-PDSO-F8

DRAIN

22 pF

JANSF2N7584D4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

UNSPECIFIED

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

344 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

165 ns

-55 Cel

115 ns

.029 ohm

45 A

SINGLE

S-XSFM-P3

ISOLATED

TO-254AA

14 pF

MIL-19500; MIL-STD-750; RH - 300K Rad(Si)

IRHMB58064

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

824 mJ

45 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.006 ohm

45 A

SINGLE

R-PSIP-T3

ISOLATED

Not Qualified

e0

IRHMS63164

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

UNSPECIFIED

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

353 mJ

45 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.019 ohm

45 A

SINGLE

R-XSFM-T3

ISOLATED

Not Qualified

TO-254AA

e0

BUY25CS45B-01(P)

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

UNSPECIFIED

250 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

380 mJ

45 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

145 ns

-55 Cel

155 ns

.05 ohm

45 A

SINGLE

S-XSFM-P3

ISOLATED

HIGH RELIABILITY

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

20 pF

RH - 100K Rad(Si)

IRHMS6S7260

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

UNSPECIFIED

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

344 mJ

45 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

100 ns

-55 Cel

103 ns

.029 ohm

35 A

SINGLE

S-XSFM-P3

ISOLATED

TO-254AA

RH - 100K Rad(Si)

JANSF2N7550D1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

208 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

GULL WING

SQUARE

ENHANCEMENT MODE

1

180 A

480 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

135 ns

-55 Cel

220 ns

.05 ohm

45 A

SINGLE

S-CSSO-G3

TO-254AA

115 pF

MIL-19500; MIL-STD-750; RH - 300K Rad(Si)

IRHMB57260SE

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

208 W

UNSPECIFIED

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

256 mJ

45 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.044 ohm

45 A

SINGLE

R-XSSO-G3

ISOLATED

Not Qualified

e0

IRHMS67264

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

250 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

140 A

251 mJ

45 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.041 ohm

45 A

SINGLE

S-CSFM-P3

ISOLATED

Not Qualified

TO-254AA

e0

IRHML597160

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

208 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

GULL WING

SQUARE

ENHANCEMENT MODE

1

180 A

480 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

135 ns

-55 Cel

220 ns

.05 ohm

45 A

SINGLE

S-CSSO-G3

TO-254AA

115 pF

MIL-19500; MIL-STD-750; RH - 100K Rad(Si)

BUY25CS45B01ESX1SA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

UNSPECIFIED

250 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

380 mJ

45 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

145 ns

-55 Cel

155 ns

.05 ohm

45 A

SINGLE

S-XSFM-P3

HIGH RELIABILITY

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

20 pF

RH - 100K Rad(Si)

IRHMS597Z60

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

UNSPECIFIED

SWITCHING

30 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

1250 mJ

45 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

210 ns

-55 Cel

180 ns

TIN LEAD

.014 ohm

45 A

SINGLE

S-XSFM-P3

Not Qualified

HIGH RELIABILITY

TO-254AA

e0

RH - 100K Rad(Si)

IRHMS57064

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

824 mJ

45 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

160 ns

-55 Cel

120 ns

TIN LEAD

.0066 ohm

45 A

SINGLE

S-CSFM-P3

ISOLATED

Not Qualified

TO-254AA

e0

RH - 100K Rad(Si)

JANSR2N7549T1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

UNSPECIFIED

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

120 A

332 mJ

30 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.103 ohm

30 A

SINGLE

S-XSFM-P3

ISOLATED

Qualified

TO-254AA

MIL-19500; RH - 100K Rad(Si)

IRHMS57064PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

824 mJ

45 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

160 ns

-55 Cel

120 ns

.0066 ohm

45 A

SINGLE

S-CSFM-P3

ISOLATED

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

RH - 100K Rad(Si)

JANSR2N7523T1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

UNSPECIFIED

SWITCHING

30 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

1250 mJ

45 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

210 ns

-55 Cel

180 ns

.014 ohm

45 A

SINGLE

S-XSFM-P3

HIGH RELIABILITY

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

MIL-19500; RH - 100K Rad(Si)

IRHMB593064

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

208 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

890 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

185 ns

-55 Cel

135 ns

.018 ohm

45 A

SINGLE

S-CSSO-P3

ISOLATED

TO-254AA

310 pF

MIL-19500; MIL-STD-750; RH - 300K Rad(Si)

JANSR2N7584D4

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

UNSPECIFIED

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

344 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

165 ns

-55 Cel

115 ns

.029 ohm

45 A

SINGLE

S-XSFM-P3

ISOLATED

TO-254AA

14 pF

MIL-19500; MIL-STD-750; RH - 100K Rad(Si)

JANSR2N7584T1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

UNSPECIFIED

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

344 mJ

45 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

165 ns

-55 Cel

115 ns

.029 ohm

45 A

SINGLE

S-XSFM-P3

ISOLATED

Qualified

TO-254AA

MIL-19500; RH - 100K Rad(Si)

IRHMS67260SCSA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

UNSPECIFIED

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

344 mJ

45 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

165 ns

-55 Cel

115 ns

.029 ohm

45 A

SINGLE

S-XSFM-P3

ISOLATED

TO-254AA

MIL-19500

IRHMS9A3064

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

UNSPECIFIED

SWITCHING

60 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

5600 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

129 ns

-55 Cel

197 ns

.007 ohm

45 A

SINGLE

S-XSFM-P3

ISOLATED

TO-254AA

30 pF

MIL-19500; MIL-STD-750; RH - 300K Rad(Si)

IPI90R340C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

PLASTIC/EPOXY

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

34 A

678 mJ

15 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.34 ohm

15 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

e3

IRHMS6S7264

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

UNSPECIFIED

SWITCHING

250 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

251 mJ

45 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

165 ns

-55 Cel

115 ns

.041 ohm

45 A

SINGLE

S-XSFM-P3

ISOLATED

HIGH RELIABILITY

TO-254AA

RH - 100K Rad(Si)

BUY15CS45B-01(ES)

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

UNSPECIFIED

150 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

380 mJ

45 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

140 ns

-55 Cel

160 ns

.027 ohm

45 A

SINGLE

S-XSFM-P3

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

100 pF

EUROPEAN SPACE AGENCY; RH - 100K Rad(Si)

IRHMS58160

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

493 mJ

45 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.014 ohm

45 A

SINGLE

S-CSFM-P3

ISOLATED

Not Qualified

RADIATION HARDENED

TO-254AA

e0

IRHMS53064

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

208 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

60 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

180 A

824 mJ

45 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

160 ns

-55 Cel

120 ns

TIN LEAD

.0066 ohm

45 A

SINGLE

S-CSFM-P3

ISOLATED

Not Qualified

TO-254AA

e0

RH - 300K Rad(Si)

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.