Infineon Technologies - IRHMB593064

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IRHMB593064 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRHMB593064
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 208 W; Package Shape: SQUARE; Terminal Position: SINGLE;
Datasheet IRHMB593064 Datasheet
In Stock780
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 185 ns
Maximum Drain Current (ID): 45 A
Maximum Pulsed Drain Current (IDM): 180 A
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): 208 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 135 ns
JESD-30 Code: S-CSSO-P3
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .018 ohm
Avalanche Energy Rating (EAS): 890 mJ
Maximum Feedback Capacitance (Crss): 310 pF
JEDEC-95 Code: TO-254AA
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Reference Standard: MIL-19500; MIL-STD-750; RH - 300K Rad(Si)
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