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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | IRHMS593260SCS |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE; |
Datasheet | IRHMS593260SCS Datasheet |
In Stock | 954 |
NAME | DESCRIPTION |
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Package Body Material: | METAL |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Turn On Time (ton): | 135 ns |
Maximum Drain Current (ID): | 30 A |
Maximum Pulsed Drain Current (IDM): | 120 A |
Surface Mount: | NO |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 208 W |
Terminal Position: | SINGLE |
Package Style (Meter): | FLANGE MOUNT |
Maximum Turn Off Time (toff): | 220 ns |
JESD-30 Code: | S-MSFM-P3 |
No. of Elements: | 1 |
Package Shape: | SQUARE |
Terminal Form: | PIN/PEG |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | ISOLATED |
Maximum Drain-Source On Resistance: | .103 ohm |
Avalanche Energy Rating (EAS): | 332 mJ |
JEDEC-95 Code: | TO-254AA |
Polarity or Channel Type: | P-CHANNEL |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 200 V |
Additional Features: | HIGH RELIABILITY |
Reference Standard: | RH - 300K Rad(Si) |
Maximum Drain Current (Abs) (ID): | 30 A |