221 W Power Field Effect Transistors (FET) 10

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IRF100B202

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

221 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

380 A

292 mJ

97 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0086 ohm

97 A

SINGLE

R-PSFM-T3

TO-220AB

e3

154 pF

NTHL060N090SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

221 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

184 A

162 mJ

46 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

106 ns

-55 Cel

94 ns

Matte Tin (Sn) - annealed

.084 ohm

46 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

11 pF

NTH4L060N090SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

221 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

211 A

162 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

58 ns

-55 Cel

67 ns

Matte Tin (Sn) - annealed

.084 ohm

46 A

SINGLE

R-PSFM-T4

TO-247

e3

11 pF

NVH4L060N090SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

221 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

211 A

162 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

58 ns

-55 Cel

67 ns

Matte Tin (Sn) - annealed

.084 ohm

46 A

SINGLE

R-PSFM-T4

TO-247

e3

11 pF

AEC-Q101

NVHL060N090SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

221 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

184 A

162 mJ

46 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

106 ns

-55 Cel

94 ns

Matte Tin (Sn) - annealed

.084 ohm

46 A

SINGLE

R-PSFM-T3

1

TO-247

e3

30

260

11 pF

AEC-Q101

BUK7108-40AIE,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

221 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

468 A

630 mJ

117 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.008 ohm

75 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

e3

30

245

BUK7908-40AIE

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

NO

221 W

PLASTIC/EPOXY

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

468 A

630 mJ

75 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.008 ohm

75 A

SINGLE

R-PSFM-T5

DRAIN

Not Qualified

e3

BUK7908-40AIE,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

NO

221 W

PLASTIC/EPOXY

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

468 A

630 mJ

75 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.008 ohm

75 A

SINGLE

R-PSFM-T5

DRAIN

Not Qualified

e3

BUK7108-40AIE

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

221 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

468 A

630 mJ

75 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.008 ohm

75 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

e3

30

245

IRFP254A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

221 W

PLASTIC/EPOXY

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

781 mJ

25 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.14 ohm

25 A

SINGLE

R-PSFM-T3

Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.