NVH4L060N090SC1 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NVH4L060N090SC1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 221 W; JEDEC-95 Code: TO-247; Maximum Drain-Source On Resistance: .084 ohm;
Datasheet	NVH4L060N090SC1 Datasheet
In Stock	1,705

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	58 ns
Maximum Drain Current (ID):	46 A
Maximum Pulsed Drain Current (IDM):	211 A
Surface Mount:	NO
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	4
Maximum Power Dissipation (Abs):	221 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
Maximum Turn Off Time (toff):	67 ns
JESD-30 Code:	R-PSFM-T4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain-Source On Resistance:	.084 ohm
Avalanche Energy Rating (EAS):	162 mJ
Maximum Feedback Capacitance (Crss):	11 pF
JEDEC-95 Code:	TO-247
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	900 V
Reference Standard:	AEC-Q101

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,705	$16.000	$27,280.000

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