23 W Power Field Effect Transistors (FET) 65

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

JANSH2N7503U8C

Infineon Technologies

N-CHANNEL

SINGLE

YES

23 W

ENHANCEMENT MODE

1

6.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6.9 A

IRHNM58110

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

23 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

27.6 A

24 mJ

6.9 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

14.6 ns

-55 Cel

49 ns

TIN LEAD

.22 ohm

6.9 A

BOTTOM

R-CBCC-N3

DRAIN

Not Qualified

HIGH RELIABILITY

e0

RH - 1000K Rad(Si)

IPA60R360CFD7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

23 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

29 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.36 ohm

5 A

SINGLE

R-PSFM-T3

ISOLATED

HIGH RELIABILITY

TO-220AB

e3

10

260

IRHNMC53110

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

23 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

27.6 A

24 mJ

6.9 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.22 ohm

6.9 A

BOTTOM

R-CBCC-N3

DRAIN

Not Qualified

e0

IRHNM54110

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

23 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

27.6 A

24 mJ

6.9 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.22 ohm

6.9 A

BOTTOM

R-CBCC-N3

DRAIN

Not Qualified

e0

IRHNM53110

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

23 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

27.6 A

24 mJ

6.9 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

14.6 ns

-55 Cel

49 ns

TIN LEAD

.22 ohm

6.9 A

BOTTOM

R-CBCC-N3

DRAIN

Not Qualified

HIGH RELIABILITY

e0

RH - 300K Rad(Si)

IRHNM593110

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

23 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

12.4 A

28 mJ

3.1 A

3

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.2 ohm

3.1 A

BOTTOM

R-CBCC-N3

DRAIN

Not Qualified

e0

IRHNM57110

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

23 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

27.6 A

24 mJ

6.9 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

14.6 ns

-55 Cel

49 ns

TIN LEAD

.22 ohm

6.9 A

BOTTOM

R-CBCC-N3

DRAIN

Not Qualified

HIGH RELIABILITY

e0

RH - 100K Rad(Si)

IRHNM55110

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

23 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

27.6 A

24 mJ

6.9 A

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

14.6 ns

-55 Cel

49 ns

.226 ohm

6.9 A

BOTTOM

R-CBCC-N3

DRAIN

HIGH RELIABILITY

RH - 500K Rad(Si)

IPAN60R360PFD7S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

23 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

29 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

.36 ohm

10 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

IRHNMC57110

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

23 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

27.6 A

24 mJ

6.9 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.22 ohm

6.9 A

BOTTOM

R-CBCC-N3

DRAIN

Not Qualified

e0

LZPF2N60

Diodes Incorporated

N-CHANNEL

SINGLE

NO

23 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

HAT2266H-EL-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

23 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

30 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.016 ohm

30 A

SINGLE

R-PSSO-G4

DRAIN

Not Qualified

e4

10

260

SSS1N50A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

23 W

PLASTIC/EPOXY

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

5 A

113 mJ

1.2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

5.5 ohm

1.2 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

SSS2N60A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

23 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

5 A

138 mJ

1.3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

5 ohm

1.3 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

IRLS510A

Samsung

N-CHANNEL

SINGLE

NO

23 W

ENHANCEMENT MODE

1

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

4.5 A

IRFS710A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

23 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

6 A

117 mJ

1.6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

3.6 ohm

1.6 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.