23 W Power Field Effect Transistors (FET) 65

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
SI7232DN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	UNSPECIFIED	SWITCHING	20 V	C BEND	SQUARE	ENHANCEMENT MODE	2	40 A	11 mJ	25 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.0164 ohm	10 A	DUAL	S-XDSO-C6	1	DRAIN	Not Qualified			e3	30	260
SISB46DN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	70 A	6 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	140 ns	-55 Cel	80 ns	Pure Matte Tin (Sn) - annealed	.0158 ohm	34 A	DUAL	S-PDSO-N8	1	DRAIN					30	260	20 pF
SIS903DN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	SQUARE	ENHANCEMENT MODE	2	40 A	9.8 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	70 ns	-55 Cel	330 ns		.0201 ohm	6 A	DUAL	S-PDSO-F8		DRAIN					NOT SPECIFIED	NOT SPECIFIED	240 pF
SI7228DN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	UNSPECIFIED	SWITCHING	30 V	C BEND	SQUARE	ENHANCEMENT MODE	2	35 A	9.8 mJ	26 A	6	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Pure Matte Tin (Sn) - annealed	.02 ohm	8.8 A	DUAL	S-XDSO-C6	1	DRAIN	Not Qualified				30	260
NVTFS6H888NLTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		80 V	FLAT	SQUARE	ENHANCEMENT MODE	1	49 A	92 mJ	4.9 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.067 ohm	4.9 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	3 pF	AEC-Q101
NVMFD5877NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	74 A	10.5 mJ	17 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.06 ohm	6 A	DUAL	R-PDSO-F6	1	DRAIN	Not Qualified			e3	30	260
NVTFS6H888NLWFTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		80 V	FLAT	SQUARE	ENHANCEMENT MODE	1	49 A	92 mJ	4.9 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.067 ohm	4.9 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	3 pF	AEC-Q101
JANSR2N7503U8	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	23 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	27.6 A	24 mJ	6.9 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	14.6 ns	-55 Cel	49 ns		.22 ohm	6.9 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified	HIGH RELIABILITY			NOT SPECIFIED	NOT SPECIFIED		MIL-19500/743
IRHNM597110	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	23 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	12.4 A	28 mJ	3.1 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	1.2 ohm	3.1 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
RM2N650IP	Rectron	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	23 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6 A	45 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			2.5 ohm	2 A	SINGLE	R-PSIP-T3					TO-251				1.1 pF
JANSF2N7503U8	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	23 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	27.6 A	24 mJ	6.9 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	14.6 ns	-55 Cel	49 ns		.22 ohm	6.9 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified	HIGH RELIABILITY			NOT SPECIFIED	NOT SPECIFIED		MIL-19500/743
NVMFD5C478NLWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	98 A	48 mJ	29 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.025 ohm	10.5 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260	9 pF	AEC-Q101
FQPF2N60C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	23 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A	120 mJ	2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	4.7 ohm	2 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
SFT1450(TP-FA)	Onsemi	N-CHANNEL	SINGLE	YES	23 W						ENHANCEMENT MODE	1			21 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							21 A
SFT1446(TP)	Onsemi	N-CHANNEL	SINGLE	NO	23 W						ENHANCEMENT MODE	1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							20 A
SFT1446(TP-FA)	Onsemi	N-CHANNEL	SINGLE	YES	23 W						ENHANCEMENT MODE	1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							20 A
FDM84100	Onsemi	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	80 A	121 mJ	21 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	27 ns	-55 Cel	35 ns		.02 ohm	21 A	DUAL	R-PDSO-N8	1	SOURCE					40	260	15 pF
SFT1450(TP)	Onsemi	N-CHANNEL	SINGLE	NO	23 W						ENHANCEMENT MODE	1			21 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							21 A
NTMFD2D4N03P8	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	227 A	54 mJ	56 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	26 ns	-55 Cel	43 ns	Tin (Sn)	.007 ohm	56 A	DUAL	R-PDSO-N8	1	SOURCE				e3	30	260	60 pF
NVMFD5877NLWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	74 A	40 mJ	17 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.06 ohm	6 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260		AEC-Q101
NVMFD5C478NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	98 A	48 mJ	29 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.025 ohm	10.5 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260	9 pF	AEC-Q101
NTTFS030N06CTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	86 A	11 mJ	19 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0297 ohm	19 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	4.4 pF
NVTFWS015N04CTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	93 A	43 mJ	9.4 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.0173 ohm	9.4 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	10 pF	AEC-Q101
NVTFS052P04M8LTAG	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	46 A	54 mJ	13.2 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.069 ohm	13.2 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	9.3 pF	AEC-Q101
NVMFD5877NLWFT3G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	74 A	40 mJ	17 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.06 ohm	6 A	DUAL	R-PDSO-F6	1	DRAIN				e3	30	260		AEC-Q101
NVMFD5877NLT3G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	74 A	10.5 mJ	17 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.06 ohm	6 A	DUAL	R-PDSO-F6	1	DRAIN	Not Qualified			e3	30	260
NVMFD5C478NT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	90 A	48 mJ	27 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.017 ohm	9.8 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260	10 pF	AEC-Q101
NVMFWD030N06CT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	63 A	10 mJ	19 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0297 ohm	19 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260	4.4 pF	AEC-Q101
NVTFWS052P04M8LTAG	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	46 A	54 mJ	13.2 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.069 ohm	13.2 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	9.3 pF	AEC-Q101
NTMFD5877NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	74 A	40 mJ	17 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.06 ohm	6 A	DUAL	R-PDSO-F8		DRAIN					NOT SPECIFIED	NOT SPECIFIED	36 pF
NTMFD1D6N03P8	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	227 A	54 mJ	56 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	26 ns	-55 Cel	43 ns	Tin (Sn)	.005 ohm	56 A	DUAL	R-PDSO-N8	1	SOURCE				e3	30	260	60 pF
NVTFS015N04CTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	93 A	43 mJ	9.4 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0173 ohm	9.4 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	10 pF	AEC-Q101
NVTFS030N06CTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	86 A	11 mJ	19 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0297 ohm	19 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	4.4 pF	AEC-Q101
NVMFD5C478NWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	90 A	48 mJ	27 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.017 ohm	9.8 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260	10 pF	AEC-Q101
NTTFS6H888NLTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		80 V	FLAT	SQUARE	ENHANCEMENT MODE	1	49 A	92 mJ	4.9 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.067 ohm	4.9 A	SINGLE	S-PDSO-F8	1	DRAIN				e3	30	260	3 pF
FDMD84100	Onsemi	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	80 A	121 mJ	21 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.02 ohm	7 A	DUAL	R-PDSO-N8	1	SOURCE			MO-229	e3	30	260
NTMFD030N06CT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	63 A	10 mJ	19 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.0297 ohm	19 A	DUAL	R-PDSO-F8		DRAIN					NOT SPECIFIED	NOT SPECIFIED	4.4 pF
NVMFD030N06CT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	63 A	10 mJ	19 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.0297 ohm	19 A	DUAL	R-PDSO-F8		DRAIN					NOT SPECIFIED	NOT SPECIFIED	4.4 pF	AEC-Q101
NTTFS015N04CTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	93 A	43 mJ	27 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0173 ohm	9.4 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	10 pF
NVTFWS030N06CTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	23 W	PLASTIC/EPOXY		60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	86 A	11 mJ	19 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0297 ohm	19 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	4.4 pF	AEC-Q101
PHX20N06T,127	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	23 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	51.6 A	30.3 mJ	12.9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.075 ohm	12.9 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
PHX20N06T	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	23 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	51.6 A	30.3 mJ	12.9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.075 ohm	12.9 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
JANSF2N7506U8C	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	23 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	12.4 A	28 mJ	3.1 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					1.2 ohm	3.1 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified				NOT SPECIFIED	NOT SPECIFIED		MIL-19500/749
JANSH2N7503U8	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	23 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	27.6 A	24 mJ	6.9 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	14.6 ns	-55 Cel	49 ns		.246 ohm	6.9 A	BOTTOM	R-CBCC-N3		DRAIN		HIGH RELIABILITY						MIL-19500; RH - 1000K Rad(Si)
JANSG2N7503U8	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	23 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	27.6 A	24 mJ	6.9 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	14.6 ns	-55 Cel	49 ns		.226 ohm	6.9 A	BOTTOM	R-CBCC-N3		DRAIN		HIGH RELIABILITY						MIL-19500; RH - 500K Rad(Si)
IRHLF77110	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	23 W	METAL	SWITCHING	100 V	WIRE	ROUND	ENHANCEMENT MODE	1	24 A	37 mJ	6 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.32 ohm	6 A	BOTTOM	O-MBCY-W3		ISOLATED	Not Qualified		TO-205AF	e0
IRHLF73110	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	23 W	METAL	SWITCHING	100 V	WIRE	ROUND	ENHANCEMENT MODE	1	24 A	37 mJ	6 A	3	CYLINDRICAL	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.32 ohm	6 A	BOTTOM	O-MBCY-W3		ISOLATED	Not Qualified		TO-205AF	e0
JANSF2N7506U8	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	23 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	12.4 A	28 mJ	3.1 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					1.2 ohm	3.1 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified							MIL-19500/749

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.