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| Manufacturer | Vishay Intertechnology |
|---|---|
| Manufacturer's Part Number | SISB46DN-T1-GE3 |
| Description | N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 23 W; Peak Reflow Temperature (C): 260; Transistor Application: SWITCHING; |
| Datasheet | SISB46DN-T1-GE3 Datasheet |
| In Stock | 8,168 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 140 ns |
| Maximum Drain Current (ID): | 34 A |
| Maximum Pulsed Drain Current (IDM): | 70 A |
| Surface Mount: | YES |
| Terminal Finish: | Pure Matte Tin (Sn) - annealed |
| No. of Terminals: | 8 |
| Maximum Power Dissipation (Abs): | 23 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 80 ns |
| JESD-30 Code: | S-PDSO-N8 |
| No. of Elements: | 2 |
| Package Shape: | SQUARE |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0158 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 6 mJ |
| Maximum Feedback Capacitance (Crss): | 20 pF |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 40 V |
| Peak Reflow Temperature (C): | 260 |
