Vishay Intertechnology - SISB46DN-T1-GE3

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SISB46DN-T1-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SISB46DN-T1-GE3
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 23 W; Peak Reflow Temperature (C): 260; Transistor Application: SWITCHING;
Datasheet SISB46DN-T1-GE3 Datasheet
In Stock8,168
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 140 ns
Maximum Drain Current (ID): 34 A
Maximum Pulsed Drain Current (IDM): 70 A
Surface Mount: YES
Terminal Finish: Pure Matte Tin (Sn) - annealed
No. of Terminals: 8
Maximum Power Dissipation (Abs): 23 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 80 ns
JESD-30 Code: S-PDSO-N8
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0158 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 6 mJ
Other Names: SISB46DN-T1-GE3CT
SISB46DN-T1-GE3DKR
SISB46DN-T1-GE3TR
Maximum Feedback Capacitance (Crss): 20 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
Peak Reflow Temperature (C): 260
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