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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | JANSR2N7503U8 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 23 W; Maximum Drain Current (Abs) (ID): 6.9 A; Additional Features: HIGH RELIABILITY; |
Datasheet | JANSR2N7503U8 Datasheet |
In Stock | 718 |
NAME | DESCRIPTION |
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Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Turn On Time (ton): | 14.6 ns |
Maximum Drain Current (ID): | 6.9 A |
Maximum Pulsed Drain Current (IDM): | 27.6 A |
Surface Mount: | YES |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 23 W |
Terminal Position: | BOTTOM |
Package Style (Meter): | CHIP CARRIER |
Maximum Turn Off Time (toff): | 49 ns |
JESD-30 Code: | R-CBCC-N3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | NO LEAD |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .22 ohm |
Avalanche Energy Rating (EAS): | 24 mJ |
Polarity or Channel Type: | N-CHANNEL |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 100 V |
Qualification: | Qualified |
Additional Features: | HIGH RELIABILITY |
Reference Standard: | MIL-19500/743 |
Maximum Drain Current (Abs) (ID): | 6.9 A |
Peak Reflow Temperature (C): | NOT SPECIFIED |