Vishay Intertechnology - SI7228DN-T1-GE3

  1. Home
  2. Vishay Intertechnology - SI7228DN-T1-GE3
SI7228DN-T1-GE3 by Vishay Intertechnology

Image shown is a representation only.

Manufacturer Vishay Intertechnology
Manufacturer's Part Number SI7228DN-T1-GE3
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 23 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet SI7228DN-T1-GE3 Datasheet
In Stock1,320
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 8.8 A
Maximum Pulsed Drain Current (IDM): 35 A
Sub-Category: FET General Purpose Powers
Surface Mount: YES
Terminal Finish: Pure Matte Tin (Sn) - annealed
No. of Terminals: 6
Maximum Power Dissipation (Abs): 23 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-XDSO-C6
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: C BEND
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .02 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 9.8 mJ
Other Names: SI7228DN-T1-GE3-ND
SI7228DN-T1-GE3CT
SI7228DNT1GE3
SI7228DN-T1-GE3DKR
SI7228DN-T1-GE3TR
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 26 A
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,320 - -

Popular Products

Category Top Products

IRF640NSTRLPBF by International Rectifier

IRF640NSTRLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Drain Current (ID): 18 A; Peak Reflow Temperature (C): 260;
CSD18532Q5B by Texas Instruments

CSD18532Q5B

Texas Instruments

CSD18532Q5B by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 400A IDM, and 0.0043 ohm Drain-Source Resistance. Suitable for high-power switching circuits with operating temperatures from -55 to 150 °C.
NTD2955T4G by Onsemi

NTD2955T4G

Onsemi

NTD2955T4G by Onsemi is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 18A.
IRFR4620TRLPBF by Infineon Technologies

IRFR4620TRLPBF

Infineon Technologies

IRFR4620TRLPBF by Infineon Technologies is a N-CHANNEL power FET with a min DS breakdown voltage of 200V. It is used for switching applications and has a max pulsed drain current of 100A.
STP55NF06 by STMicroelectronics

STP55NF06

STMicroelectronics

STP55NF06 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 200A IDM, and 0.018 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175°C, making it suitable for high-power tasks.
FQA36P15 by Fairchild Semiconductor

FQA36P15

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 294 W; Minimum DS Breakdown Voltage: 150 V; Qualification: Not Qualified;
IRFZ44NSTRR by International Rectifier

IRFZ44NSTRR

International Rectifier

IRFZ44NSTRR by International Rectifier is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 160A IDM. Ideal for SWITCHING applications, it features 0.0175 ohm Drain-Source On Resistance and 94W Max Power Dissipation in a SMALL OUTLINE package.
FDS4675 by Fairchild Semiconductor

FDS4675

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.4 W; Maximum Drain Current (ID): 11 A; Terminal Position: DUAL;
IRLL110TRPBF by International Rectifier

IRLL110TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE; Additional Features: LOGIC LEVEL COMPATIBLE;
FDS4465 by Onsemi

FDS4465

Onsemi

FDS4465 by Onsemi is a P-CHANNEL power field effect transistor (FET) with a min DS breakdown voltage of 20V. It is used for switching applications and has a max drain current of 13.5A and max power dissipation of 2.5W.
IRLML2060TRPBF by International Rectifier

IRLML2060TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Transistor Element Material: SILICON; Transistor Application: SWITCHING;
NTD5865NLT4G by Onsemi

NTD5865NLT4G

Onsemi

NTD5865NLT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 137A IDM, and 0.019 ohm RDS. It is an N-CHANNEL transistor for SWITCHING applications. Operating in ENHANCEMENT MODE, it has a max power dissipation of 52W and can withstand temperatures from -55 to 150 °C.
2N7000 by Sipex

2N7000

Sipex

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb);
SQM120P06-07L-GE3 by Vishay Intertechnology

SQM120P06-07L-GE3

Vishay Intertechnology

Vishay Intertechnology's SQM120P06-07L-GE3 is a P-channel power FET with 60V DS breakdown voltage, 120A max drain current, and 0.0067 ohm on-resistance. Ideal for high-power applications in enhancement mode operation with 480A pulsed drain current capability.
IRF7425TRPBF by Infineon Technologies

IRF7425TRPBF

Infineon Technologies

IRF7425TRPBF by Infineon Technologies is a P-CHANNEL FET with 20V DS Breakdown Voltage, 15A Drain Current, and 0.0082 ohm On Resistance. Ideal for SWITCHING applications, it features a built-in diode in a RECTANGULAR package with GULL WING terminals. Operating in ENHANCEMENT MODE, it can handle up to 60A Pulsed Drain Current.
BSC011N03LSATMA1 by Infineon Technologies

BSC011N03LSATMA1

Infineon Technologies

Infineon BSC011N03LSATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 400A IDM, 0.0014 ohm RDS(on), and 190mJ EAS rating. Its METAL-OXIDE SEMICONDUCTOR technology and DUAL terminal position make it suitable for high-power circuits.
IRF7420TRPBF by Infineon Technologies

IRF7420TRPBF

Infineon Technologies

IRF7420TRPBF by Infineon is a P-CHANNEL FET with 12V DS Breakdown Voltage and 46A IDM. Ideal for SWITCHING applications, it has a single configuration with built-in diode in a small outline package. Operating from -55 to 150 °C, it offers 0.014 ohm Drain-Source On Resistance and 2.5W Power Dissipation.
FDS4559_F085 by Fairchild Semiconductor

FDS4559_F085

Fairchild Semiconductor

FDS4559_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. It features 2 elements with built-in diode, suitable for SWITCHING applications. With 20A IDM and 0.055 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 150°C, making it ideal for high-power electronics.
IRLML0040TRPBF by Infineon Technologies

IRLML0040TRPBF

Infineon Technologies

Infineon's IRLML0040TRPBF is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 15A IDM, 3.6A ID, and 0.056 ohm RDS(on). With a small outline package style and -55 to 150 °C operating range, it offers high performance in compact designs.
IRFR9024PBF by Vishay Siliconix

IRFR9024PBF

Vishay Siliconix

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; JESD-30 Code: R-PSSO-G2; Minimum DS Breakdown Voltage: 60 V;