255 W Power Field Effect Transistors (FET) 29

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

TK100E06N1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

255 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

627 A

413 mJ

100 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0023 ohm

100 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

FDP060AN08A0

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

255 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

350 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.006 ohm

80 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

TK100E08N1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

255 W

PLASTIC/EPOXY

SWITCHING

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

568 A

278 mJ

100 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0032 ohm

100 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

FDP060AN08A0_NL

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

255 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

350 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.006 ohm

80 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

IPW60R099CP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

255 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

93 A

800 mJ

31 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.099 ohm

31 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

TK100E10N1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

255 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

434 A

222 mJ

100 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0034 ohm

100 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

TK72E12N1,S1X(S

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

255 W

PLASTIC/EPOXY

SWITCHING

120 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

360 A

256 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0044 ohm

72 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

30 pF

STW48NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

255 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

156 A

457 mJ

39 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.07 ohm

39 A

SINGLE

R-PSFM-T3

TO-247

e3

FDB060AN08A0

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

255 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

350 mJ

16 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.006 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

245

NTMTSC002N10MCTXG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

255 W

PLASTIC/EPOXY

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

2223 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.002 ohm

236 A

DUAL

R-PDSO-F8

1

DRAIN

e3

30

260

37 pF

NTMTS002N10MCTXG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

255 W

PLASTIC/EPOXY

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

2223 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0023 ohm

236 A

DUAL

R-PDSO-F8

1

DRAIN

e3

30

260

37 pF

FDP3651U

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

255 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

220 A

266 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.018 ohm

80 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

NTMT061N60S5F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

255 W

PLASTIC/EPOXY

SWITCHING

600 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

146 A

376 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.061 ohm

41 A

SINGLE

S-PSSO-N4

1

DRAIN

e3

30

260

STW47NM60ND

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

255 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

140 A

1000 mJ

35 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.088 ohm

35 A

SINGLE

R-PSFM-T3

TO-247

e3

STW43NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

255 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

140 A

35 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.095 ohm

35 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247AC

e3

STW43NM50N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

255 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

148 A

37 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.085 ohm

37 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247AC

STW43NM60ND

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

255 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

140 A

1000 mJ

35 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.088 ohm

35 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

BUK763R4-30,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

255 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn)

75 A

1

e3

BUK753R4-30B

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

255 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

794 A

1300 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0034 ohm

198 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

BUK763R4-30B,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

255 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

75 A

1

e3

30

245

BUK763R4-30B

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

255 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

794 A

1300 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0034 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

BUK753R4-30B,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

255 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn)

75 A

e3

IPB60R099CPA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

255 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

93 A

800 mJ

31 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.105 ohm

31 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

IPI60R099CPA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

255 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

93 A

800 mJ

31 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.105 ohm

31 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

e3

IPW60R037P7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

255 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

280 A

295 mJ

76 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.037 ohm

76 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

IPP60R099CP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

255 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

93 A

800 mJ

31 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.099 ohm

31 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

IPB60R099CP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

255 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

93 A

800 mJ

31 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.099 ohm

31 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

245

IPP60R099CPA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

255 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

93 A

800 mJ

31 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.105 ohm

31 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

TK72E12N1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

255 W

PLASTIC/EPOXY

SWITCHING

120 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

360 A

256 mJ

100 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0044 ohm

72 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.