Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
272 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
200 A |
211 mJ |
110 A |
2 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.008 ohm |
110 A |
SINGLE |
R-PSSO-G2 |
1 |
Not Qualified |
TO-263AB |
e3 |
30 |
260 |
|||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
272 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1128 A |
248 mJ |
100 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0021 ohm |
100 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
MO-235 |
e3 |
30 |
260 |
|||||||||||||||||
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
272 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
200 A |
211 mJ |
110 A |
2 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.008 ohm |
110 A |
SINGLE |
R-PSSO-G2 |
Not Qualified |
TO-263AB |
e0 |
||||||||||||||||||||||
|
Wolfspeed |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
272 W |
PLASTIC/EPOXY |
SWITCHING |
1200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
7 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON CARBIDE |
-40 Cel |
.0535 ohm |
64 A |
SINGLE |
R-PSSO-G7 |
DRAIN |
TO-263 |
5 pF |
||||||||||||||||||||||||
|
Alpha & Omega Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
272 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
960 A |
844 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.0019 ohm |
350 A |
SINGLE |
R-PSSO-F8 |
DRAIN |
NOT SPECIFIED |
NOT SPECIFIED |
68 pF |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
272 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
90 A |
440 mJ |
36 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.095 ohm |
36 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-263AB |
e3 |
30 |
245 |
||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
272 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
125 mJ |
90 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.006 ohm |
90 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
272 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
90 A |
440 mJ |
36 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.095 ohm |
36 A |
SINGLE |
R-PSFM-T3 |
TO-220AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
272 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
90 A |
440 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.095 ohm |
36 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
TO-263AB |
NOT SPECIFIED |
NOT SPECIFIED |
7 pF |
AEC-Q101 |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
272 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
90 A |
440 mJ |
36 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.095 ohm |
36 A |
SINGLE |
R-PSFM-T3 |
TO-247 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
272 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
90 A |
440 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.09 ohm |
36 A |
DUAL |
S-PDSO-N8 |
1 |
DRAIN |
e3 |
30 |
260 |
||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR |
YES |
272 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
620 A |
1460 mJ |
155 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.006 ohm |
75 A |
SINGLE |
R-PSSO-G6 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
245 |
||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
272 W |
PLASTIC/EPOXY |
SWITCHING |
75 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
480 A |
739 mJ |
75 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.009 ohm |
75 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
245 |
||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
272 W |
ENHANCEMENT MODE |
1 |
155 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
155 A |
||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR |
NO |
272 W |
PLASTIC/EPOXY |
SWITCHING |
75 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
480 A |
739 mJ |
75 A |
5 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.009 ohm |
75 A |
SINGLE |
R-PSFM-T5 |
1 |
DRAIN |
Not Qualified |
e3 |
||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR |
YES |
272 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
522 A |
460 mJ |
75 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.008 ohm |
75 A |
SINGLE |
R-PSSO-G6 |
1 |
DRAIN |
Not Qualified |
ESD PROTECTED |
e3 |
30 |
245 |
|||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
272 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
560 A |
500 mJ |
75 A |
5 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0077 ohm |
75 A |
SINGLE |
R-PSFM-T5 |
DRAIN |
Not Qualified |
e3 |
|||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
272 W |
PLASTIC/EPOXY |
SWITCHING |
75 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
480 A |
739 mJ |
120 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.009 ohm |
75 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
245 |
||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
272 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
560 A |
460 mJ |
75 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.007 ohm |
140 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
245 |
||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
272 W |
ENHANCEMENT MODE |
1 |
120 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
120 A |
||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
272 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
560 A |
460 mJ |
75 A |
5 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.007 ohm |
75 A |
SINGLE |
R-PSFM-T5 |
1 |
DRAIN |
Not Qualified |
e3 |
||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
272 W |
PLASTIC/EPOXY |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
620 A |
1460 mJ |
75 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.005 ohm |
75 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
245 |
|||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
272 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
560 A |
1400 mJ |
75 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Tin (Sn) |
.0077 ohm |
75 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
245 |
||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR |
NO |
272 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
620 A |
1460 mJ |
75 A |
5 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.005 ohm |
75 A |
SINGLE |
R-PSFM-T5 |
1 |
DRAIN |
Not Qualified |
e3 |
||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
272 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
560 A |
1400 mJ |
75 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0077 ohm |
75 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
245 |
||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
272 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
560 A |
1400 mJ |
75 A |
5 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0077 ohm |
75 A |
SINGLE |
R-PSFM-T5 |
1 |
DRAIN |
Not Qualified |
e3 |
||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR |
YES |
272 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
522 A |
460 mJ |
130 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.008 ohm |
75 A |
SINGLE |
R-PSSO-G6 |
1 |
DRAIN |
Not Qualified |
ESD PROTECTED |
e3 |
30 |
245 |
|||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
272 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
748 A |
1500 mJ |
187 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0041 ohm |
75 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
245 |
||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
272 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
560 A |
500 mJ |
75 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Tin (Sn) |
.0077 ohm |
75 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
245 |
||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR |
YES |
272 W |
PLASTIC/EPOXY |
SWITCHING |
75 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
456 A |
739 mJ |
114 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.01 ohm |
75 A |
SINGLE |
R-PSSO-G6 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
245 |
||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
272 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
560 A |
1400 mJ |
75 A |
5 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.007 ohm |
75 A |
SINGLE |
R-PSFM-T5 |
1 |
DRAIN |
Not Qualified |
e3 |
||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR |
YES |
272 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
560 A |
460 mJ |
75 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Tin (Sn) |
.007 ohm |
75 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
245 |
||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR |
YES |
272 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
620 A |
1460 mJ |
75 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.006 ohm |
75 A |
SINGLE |
R-PSSO-G6 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
245 |
||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
272 W |
PLASTIC/EPOXY |
SWITCHING |
75 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
480 A |
739 mJ |
120 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.009 ohm |
75 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
245 |
||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
272 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
560 A |
1400 mJ |
140 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.007 ohm |
75 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
245 |
||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
272 W |
ENHANCEMENT MODE |
1 |
187 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
187 A |
||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
272 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
560 A |
1400 mJ |
75 A |
5 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.007 ohm |
75 A |
SINGLE |
R-PSFM-T5 |
1 |
DRAIN |
Not Qualified |
e3 |
||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
272 W |
ENHANCEMENT MODE |
1 |
100 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
100 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR |
NO |
272 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
560 A |
460 mJ |
75 A |
5 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.007 ohm |
75 A |
SINGLE |
R-PSFM-T5 |
1 |
DRAIN |
Not Qualified |
e3 |
||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN CURRENT AND KELVIN SENSOR |
YES |
272 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
560 A |
460 mJ |
75 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.007 ohm |
75 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
245 |
||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
272 W |
ENHANCEMENT MODE |
1 |
75 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
75 A |
||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
272 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
560 A |
1400 mJ |
75 A |
5 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0077 ohm |
75 A |
SINGLE |
R-PSFM-T5 |
1 |
DRAIN |
Not Qualified |
e3 |
||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
272 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
748 A |
1500 mJ |
75 A |
5 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0041 ohm |
75 A |
SINGLE |
R-PSFM-T5 |
1 |
DRAIN |
Not Qualified |
e3 |
||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
272 W |
ENHANCEMENT MODE |
1 |
155 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
155 A |
||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR |
NO |
272 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
620 A |
1460 mJ |
75 A |
5 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.005 ohm |
75 A |
SINGLE |
R-PSFM-T5 |
1 |
DRAIN |
Not Qualified |
e3 |
||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
272 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
620 A |
1460 mJ |
75 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Tin (Sn) |
.005 ohm |
75 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
245 |
||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
272 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
748 A |
1500 mJ |
75 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0041 ohm |
75 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
245 |
||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR |
YES |
272 W |
PLASTIC/EPOXY |
SWITCHING |
75 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
456 A |
739 mJ |
75 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.01 ohm |
75 A |
SINGLE |
R-PSSO-G6 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
245 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.