272 W Power Field Effect Transistors (FET) 68

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

SUM110P06-08L-E3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

272 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

211 mJ

110 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.008 ohm

110 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-263AB

e3

30

260

PSMN1R8-40YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

272 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1128 A

248 mJ

100 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0021 ohm

100 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY, ULTRA-LOW RESISTANCE

MO-235

e3

30

260

SUM110P06-08L

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

272 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

211 mJ

110 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.008 ohm

110 A

SINGLE

R-PSSO-G2

Not Qualified

TO-263AB

e0

C3M0040120J1

Wolfspeed

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

272 W

PLASTIC/EPOXY

SWITCHING

1200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

7

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.0535 ohm

64 A

SINGLE

R-PSSO-G7

DRAIN

TO-263

5 pF

AOTL66610

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

272 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

960 A

844 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0019 ohm

350 A

SINGLE

R-PSSO-F8

DRAIN

NOT SPECIFIED

NOT SPECIFIED

68 pF

NTB095N65S3HF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

272 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

90 A

440 mJ

36 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.095 ohm

36 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

30

245

SUP90N06-6M0P-E3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

272 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

125 mJ

90 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.006 ohm

90 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

NTP095N65S3HF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

272 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

90 A

440 mJ

36 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.095 ohm

36 A

SINGLE

R-PSFM-T3

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

NVB095N65S3F

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

272 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

90 A

440 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.095 ohm

36 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

7 pF

AEC-Q101

NTHL095N65S3HF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

272 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

90 A

440 mJ

36 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.095 ohm

36 A

SINGLE

R-PSFM-T3

TO-247

e3

NOT SPECIFIED

NOT SPECIFIED

NTMT090N65S3HF

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

272 W

PLASTIC/EPOXY

SWITCHING

650 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

90 A

440 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.09 ohm

36 A

DUAL

S-PDSO-N8

1

DRAIN

e3

30

260

BUK7C06-40AITE,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

272 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

620 A

1460 mJ

155 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.006 ohm

75 A

SINGLE

R-PSSO-G6

1

DRAIN

Not Qualified

e3

30

245

BUK7109-75AIE

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

272 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

480 A

739 mJ

75 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.009 ohm

75 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

e3

30

245

BUK7C06-40AITE/T3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

272 W

ENHANCEMENT MODE

1

155 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

155 A

BUK7909-75AIE,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

NO

272 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

480 A

739 mJ

75 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.009 ohm

75 A

SINGLE

R-PSFM-T5

1

DRAIN

Not Qualified

e3

BUK7C08-55AITE

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

272 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

522 A

460 mJ

75 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.008 ohm

75 A

SINGLE

R-PSSO-G6

1

DRAIN

Not Qualified

ESD PROTECTED

e3

30

245

BUK9907-55ATE,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

272 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

560 A

500 mJ

75 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0077 ohm

75 A

SINGLE

R-PSFM-T5

DRAIN

Not Qualified

e3

BUK7109-75ATE,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

272 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

480 A

739 mJ

120 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.009 ohm

75 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

e3

30

245

BUK7107-55ATE

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

272 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

560 A

460 mJ

75 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.007 ohm

140 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

e3

30

245

BUK7109-75AIE/T3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

272 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

120 A

BUK7907-55ATE,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

272 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

560 A

460 mJ

75 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.007 ohm

75 A

SINGLE

R-PSFM-T5

1

DRAIN

Not Qualified

e3

BUK7105-40ATE,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

272 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

620 A

1460 mJ

75 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.005 ohm

75 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

e3

30

245

BUK9107-40ATC

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

272 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

560 A

1400 mJ

75 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.0077 ohm

75 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

e3

30

245

BUK7905-40AIE,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

NO

272 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

620 A

1460 mJ

75 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.005 ohm

75 A

SINGLE

R-PSFM-T5

1

DRAIN

Not Qualified

e3

BUK9107-40ATC,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

272 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

560 A

1400 mJ

75 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0077 ohm

75 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

e3

30

245

BUK9907-40ATC

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

272 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

560 A

1400 mJ

75 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0077 ohm

75 A

SINGLE

R-PSFM-T5

1

DRAIN

Not Qualified

e3

BUK7C08-55AITE,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

272 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

522 A

460 mJ

130 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.008 ohm

75 A

SINGLE

R-PSSO-G6

1

DRAIN

Not Qualified

ESD PROTECTED

e3

30

245

BUK714R1-40BT,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

272 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

748 A

1500 mJ

187 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0041 ohm

75 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

e3

30

245

BUK9107-55ATE

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

272 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

560 A

500 mJ

75 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.0077 ohm

75 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

e3

30

245

BUK7C10-75AITE,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

272 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

456 A

739 mJ

114 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.01 ohm

75 A

SINGLE

R-PSSO-G6

1

DRAIN

Not Qualified

e3

30

245

BUK7907-40ATC,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

272 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

560 A

1400 mJ

75 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.007 ohm

75 A

SINGLE

R-PSFM-T5

1

DRAIN

Not Qualified

e3

BUK7107-55AIE

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

272 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

560 A

460 mJ

75 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.007 ohm

75 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

e3

30

245

BUK7C06-40AITE

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

272 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

620 A

1460 mJ

75 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.006 ohm

75 A

SINGLE

R-PSSO-G6

1

DRAIN

Not Qualified

e3

30

245

BUK7109-75AIE,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

272 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

480 A

739 mJ

120 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.009 ohm

75 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

e3

30

245

BUK7107-40ATC,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

272 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

560 A

1400 mJ

140 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.007 ohm

75 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

e3

30

245

BUK714R1-40BT/T3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

272 W

ENHANCEMENT MODE

1

187 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

187 A

BUK7907-40ATC

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

272 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

560 A

1400 mJ

75 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.007 ohm

75 A

SINGLE

R-PSFM-T5

1

DRAIN

Not Qualified

e3

PSMN2R0-30YLE,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

272 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

BUK7907-55AIE,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

NO

272 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

560 A

460 mJ

75 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.007 ohm

75 A

SINGLE

R-PSFM-T5

1

DRAIN

Not Qualified

e3

BUK7107-55AIE,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN CURRENT AND KELVIN SENSOR

YES

272 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

560 A

460 mJ

75 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.007 ohm

75 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

e3

30

245

BUK7105-40ATE/T3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

272 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

75 A

BUK9907-40ATC,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

272 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

560 A

1400 mJ

75 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0077 ohm

75 A

SINGLE

R-PSFM-T5

1

DRAIN

Not Qualified

e3

BUK794R1-40BT

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

272 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

748 A

1500 mJ

75 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0041 ohm

75 A

SINGLE

R-PSFM-T5

1

DRAIN

Not Qualified

e3

BUK7105-40AIE/T3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

272 W

ENHANCEMENT MODE

1

155 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

155 A

BUK7905-40AIE

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

NO

272 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

620 A

1460 mJ

75 A

5

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.005 ohm

75 A

SINGLE

R-PSFM-T5

1

DRAIN

Not Qualified

e3

BUK7105-40AIE

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

272 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

620 A

1460 mJ

75 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.005 ohm

75 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

e3

30

245

BUK714R1-40BT

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

272 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

748 A

1500 mJ

75 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0041 ohm

75 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

e3

30

245

BUK7C10-75AITE

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

YES

272 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

456 A

739 mJ

75 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.01 ohm

75 A

SINGLE

R-PSSO-G6

1

DRAIN

Not Qualified

e3

30

245

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.