280 W Power Field Effect Transistors (FET) 52

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IRFP460PBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

960 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.27 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e3

350 pF

IRFP460

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

960 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN LEAD

.27 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e0

IRFP460APBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

960 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.27 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e3

30

260

18 pF

IRFP460LCPBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

960 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Pure Matte Tin (Sn) - annealed

.27 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AC

30

260

IRFP460LC

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

280 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

960 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN LEAD

.27 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e0

IRFP460A

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

960 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN LEAD

.27 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e0

IRFP3206PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

840 A

170 mJ

200 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.003 ohm

120 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e3

IRFB20N50KPBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

330 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.25 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

FDA20N50-F109

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

88 A

1110 mJ

22 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.23 ohm

22 A

SINGLE

R-PSFM-T3

Not Qualified

FAST SWITCHING

FDA20N50_F109

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

88 A

1110 mJ

22 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.23 ohm

22 A

SINGLE

R-PSFM-T3

Not Qualified

FAST SWITCHING

e3

FQA9N90C_F109

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

900 mJ

9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.4 ohm

9 A

SINGLE

R-PSFM-T3

Not Qualified

e3

FQA9N90C-F109

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

900 mJ

9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.4 ohm

9 A

SINGLE

R-PSFM-T3

Not Qualified

IRFP264PBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

150 A

1000 mJ

38 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.075 ohm

38 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AC

e3

30

260

IRFP4310ZPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

560 A

130 mJ

134 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.006 ohm

120 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e3

IXTA4N150HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

280 W

PLASTIC/EPOXY

SWITCHING

1500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

350 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

6 ohm

4 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

10

260

35 pF

IRFP260PBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

1000 mJ

46 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.055 ohm

46 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e3

30

260

IRFP360PBF

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

280 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

92 A

1200 mJ

23 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.2 ohm

23 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e3

30

260

IRFPC60PBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

64 A

1000 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.4 ohm

16 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e3

30

260

98 pF

IRFPC60LCPBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

64 A

1000 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.4 ohm

16 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e3

30

260

IRFP460NPBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

340 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.24 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e3

30

260

IXTH4N150

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

1500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

350 mJ

4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

6 ohm

4 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247

e3

10

260

TK20J50D(F)

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

470 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.27 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

30

260

FQA9N90C

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

900 mJ

9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.4 ohm

9 A

SINGLE

R-PSFM-T3

Not Qualified

e3

FQA40N25

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

160 A

800 mJ

40 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.07 ohm

40 A

SINGLE

R-PSFM-T3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

STW60N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

184 A

1400 mJ

46 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.059 ohm

46 A

SINGLE

R-PSFM-T3

ULTRA-LOW RESISTANCE

TO-247

e3

STW30NM60D

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

740 mJ

30 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.145 ohm

30 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247AC

e3

STP90NS04ZC

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

280 W

PLASTIC/EPOXY

SWITCHING

33 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

750 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.006 ohm

80 A

SINGLE

R-PSFM-T3

1

Not Qualified

TO-220AB

STW50NB20

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

1000 mJ

50 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.055 ohm

50 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

OM6052SJ

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

METAL

SWITCHING

500 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

80 A

30 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.16 ohm

30 A

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-267AA

e0

OM6053SJ

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

METAL

SWITCHING

600 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

75 A

25 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.23 ohm

25 A

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-267AA

e0

OM6051SJ

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

METAL

SWITCHING

200 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

135 A

55 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.03 ohm

55 A

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-267AA

e0

OM6050SJ

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

METAL

SWITCHING

100 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

235 A

100 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.014 ohm

100 A

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-267AA

e0

OM6055SJ

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

METAL

SWITCHING

1000 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

30 A

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.8 ohm

10 A

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-267AA

e0

OM6054SJ

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

METAL

SWITCHING

800 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

50 A

18 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.5 ohm

18 A

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-267AA

e0

TK20J50D(Q)

Toshiba

N-CHANNEL

SINGLE

NO

280 W

ENHANCEMENT MODE

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

TK20J50D

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

470 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.27 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

NOT SPECIFIED

NOT SPECIFIED

IXTT4N150HV

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

280 W

PLASTIC/EPOXY

SWITCHING

1500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

350 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

6 ohm

4 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-268AA

e3

10

260

35 pF

SSH45N15

Samsung

N-CHANNEL

SINGLE

NO

280 W

PLASTIC/EPOXY

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

45 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.065 ohm

45 A

SINGLE

R-PSFM-T3

Not Qualified

SSH22N45

Samsung

N-CHANNEL

SINGLE

NO

280 W

PLASTIC/EPOXY

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

22 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.25 ohm

22 A

SINGLE

R-PSFM-T3

Not Qualified

SSH70N08

Samsung

N-CHANNEL

SINGLE

NO

280 W

PLASTIC/EPOXY

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

70 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.025 ohm

70 A

SINGLE

R-PSFM-T3

Not Qualified

SSH25N35

Samsung

N-CHANNEL

SINGLE

NO

280 W

PLASTIC/EPOXY

350 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

25 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.2 ohm

25 A

SINGLE

R-PSFM-T3

Not Qualified

SSH70N10

Samsung

N-CHANNEL

SINGLE

NO

280 W

PLASTIC/EPOXY

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

70 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.025 ohm

70 A

SINGLE

R-PSFM-T3

Not Qualified

SSH12N70

Samsung

N-CHANNEL

SINGLE

NO

280 W

PLASTIC/EPOXY

700 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.9 ohm

12 A

SINGLE

R-PSFM-T3

Not Qualified

SSH17N60

Samsung

N-CHANNEL

SINGLE

NO

280 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

17 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.45 ohm

17 A

SINGLE

R-PSFM-T3

Not Qualified

SSH22N50

Samsung

N-CHANNEL

SINGLE

NO

280 W

PLASTIC/EPOXY

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

22 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.25 ohm

22 A

SINGLE

R-PSFM-T3

Not Qualified

SSH10N90A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

794 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.2 ohm

10 A

SINGLE

R-PSFM-T3

Not Qualified

SSH17N55

Samsung

N-CHANNEL

SINGLE

NO

280 W

PLASTIC/EPOXY

550 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

17 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.45 ohm

17 A

SINGLE

R-PSFM-T3

Not Qualified

SSH9N90A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

280 W

PLASTIC/EPOXY

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

772 mJ

9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

280 W

150 Cel

SILICON

190 ns

435 ns

1.4 ohm

9 A

SINGLE

R-PSFM-T3

Not Qualified

125 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.