Samsung - SSH45N15

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SSH45N15 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number SSH45N15
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Maximum Drain Current (Abs) (ID): 45 A; Minimum DS Breakdown Voltage: 150 V;
Datasheet SSH45N15 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 45 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 150 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 280 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 45 A
Maximum Drain-Source On Resistance: .065 ohm
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