298 W Power Field Effect Transistors (FET) 21

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IXTA96P085T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

298 W

PLASTIC/EPOXY

SWITCHING

85 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

1000 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.013 ohm

96 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-263AA

e3

10

260

460 pF

IXTA44P15T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

298 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

130 A

1000 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.065 ohm

44 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-263AA

e3

10

260

183 pF

IXTA120P065T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

298 W

PLASTIC/EPOXY

SWITCHING

65 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

1000 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.01 ohm

120 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-263AA

e3

10

260

505 pF

IXTA76P10T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

298 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

230 A

1000 mJ

76 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.025 ohm

76 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-263AA

e3

10

260

FQA62N25C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

298 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

248 A

2300 mJ

62 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.035 ohm

62 A

SINGLE

R-PSFM-T3

Not Qualified

e3

IXTP76P10T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

298 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

230 A

1000 mJ

76 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.025 ohm

76 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

IXTA140P05T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

298 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

420 A

1000 mJ

140 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.009 ohm

140 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-263AA

e3

10

260

640 pF

IXTP140P05T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

298 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

420 A

1000 mJ

140 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.009 ohm

140 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

640 pF

IXTP96P085T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

298 W

PLASTIC/EPOXY

SWITCHING

85 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.013 ohm

96 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

460 pF

IXTP120P065T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

298 W

PLASTIC/EPOXY

SWITCHING

65 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

360 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.01 ohm

120 A

SINGLE

R-PSFM-T4

DRAIN

AVALANCHE RATED

TO-220AB

505 pF

IXTH96P085T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

298 W

PLASTIC/EPOXY

SWITCHING

85 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.013 ohm

96 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

e3

10

260

460 pF

IXTH120P065T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

298 W

PLASTIC/EPOXY

SWITCHING

65 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

360 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.01 ohm

120 A

SINGLE

R-PSFM-T4

DRAIN

AVALANCHE RATED

TO-247

e3

10

260

505 pF

IXTP44P15T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

298 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

130 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.065 ohm

44 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

183 pF

IXTQ44P15T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

298 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

130 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.065 ohm

44 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

183 pF

FCH150N65F-F155

Onsemi

N-CHANNEL

SINGLE

NO

298 W

24 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn) - annealed

24 A

e3

NOT SPECIFIED

NOT SPECIFIED

FCP150N65F

Onsemi

N-CHANNEL

SINGLE

NO

298 W

1

24 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn) - annealed

24 A

e3

NOT SPECIFIED

NOT SPECIFIED

BUK7L3R3-34BRC

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

298 W

PLASTIC/EPOXY

SWITCHING

34 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

872 A

1900 mJ

218 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0033 ohm

218 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

IXTT76P10THV

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

298 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

230 A

1000 mJ

76 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.025 ohm

76 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED

TO-268AA

IXTH140P05T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

298 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

420 A

1000 mJ

140 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.009 ohm

140 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

e3

10

260

640 pF

IXTH76P10T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

298 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

230 A

1000 mJ

76 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.025 ohm

76 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247

e3

10

260

IXTH44P15T

Littelfuse

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

298 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

130 A

1000 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.065 ohm

44 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

e3

10

260

183 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.