3.8 W Power Field Effect Transistors (FET) 37

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

SI7116DN-T1-E3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

UNSPECIFIED

SWITCHING

40 V

C BEND

SQUARE

ENHANCEMENT MODE

1

60 A

11 mJ

10.5 A

5

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.0078 ohm

10.5 A

DUAL

S-XDSO-C5

1

DRAIN

Not Qualified

e3

40

260

SI7415DN-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

UNSPECIFIED

SWITCHING

60 V

C BEND

SQUARE

ENHANCEMENT MODE

1

30 A

3.6 A

5

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.065 ohm

3.6 A

DUAL

S-XDSO-C5

1

DRAIN

Not Qualified

FAST SWITCHING

e3

30

260

SI7415DN-T1-E3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

UNSPECIFIED

SWITCHING

60 V

C BEND

SQUARE

ENHANCEMENT MODE

1

30 A

3.6 A

5

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.065 ohm

3.6 A

DUAL

S-XDSO-C5

1

DRAIN

Not Qualified

e3

30

260

SI7106DN-T1-E3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

UNSPECIFIED

SWITCHING

20 V

C BEND

SQUARE

ENHANCEMENT MODE

1

60 A

45 mJ

12.5 A

5

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.0062 ohm

12.5 A

DUAL

S-XDSO-C5

1

DRAIN

Not Qualified

e3

30

260

DMPH6050SK3-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

31 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.07 ohm

7.2 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

e3

260

68 pF

SI7110DN-T1-E3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

UNSPECIFIED

SWITCHING

20 V

C BEND

SQUARE

ENHANCEMENT MODE

1

60 A

61 mJ

13.5 A

5

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0053 ohm

13.5 A

DUAL

S-XDSO-C5

1

DRAIN

Not Qualified

e3

30

260

SI7414DN-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

UNSPECIFIED

SWITCHING

60 V

C BEND

SQUARE

ENHANCEMENT MODE

1

30 A

18 mJ

5.6 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.025 ohm

5.6 A

DUAL

S-XDSO-C5

1

DRAIN

Not Qualified

e3

30

260

IRF1407STRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

520 A

390 mJ

100 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0078 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

HIGH RELIABILITY, ULTRA LOW RESISTANCE

e3

30

260

SI7415DN

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

PLASTIC/EPOXY

SWITCHING

60 V

C BEND

SQUARE

ENHANCEMENT MODE

1

20 A

3.6 A

5

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.065 ohm

3.6 A

DUAL

S-PDSO-C5

DRAIN

Not Qualified

e0

SQ7415EN-T1-E3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

UNSPECIFIED

SWITCHING

60 V

C BEND

SQUARE

ENHANCEMENT MODE

1

30 A

3.6 A

5

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.065 ohm

3.6 A

DUAL

S-XDSO-C5

1

DRAIN

Not Qualified

e3

IRL3715SPBF

International Rectifier

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

210 A

110 mJ

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - with Nickel (Ni) barrier

.014 ohm

54 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

260

SI7110DN-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

UNSPECIFIED

SWITCHING

20 V

C BEND

SQUARE

ENHANCEMENT MODE

1

60 A

61 mJ

13.5 A

5

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.0053 ohm

13.5 A

DUAL

S-XDSO-C5

1

DRAIN

Not Qualified

e3

30

260

SI7116DN-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

UNSPECIFIED

SWITCHING

40 V

C BEND

SQUARE

ENHANCEMENT MODE

1

60 A

11 mJ

10.5 A

5

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.0078 ohm

10.5 A

DUAL

S-XDSO-C5

1

DRAIN

Not Qualified

e3

40

260

IRF1010ELPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3.8 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

330 A

320 mJ

83 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - with Nickel (Ni) barrier

.012 ohm

75 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-262AA

e3

30

260

IRF1407STRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

520 A

390 mJ

100 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0078 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

HIGH RELIABILITY, ULTRA LOW RESISTANCE

e3

30

260

UPA2800T1L-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

102 A

28.9 mJ

17 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0073 ohm

17 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

e3

UPA2803T1L-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

80 A

40 mJ

20 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0058 ohm

20 A

DUAL

R-PDSO-N8

DRAIN

Not Qualified

e3

UPA2801T1L-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

96 A

25.6 mJ

16 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0096 ohm

16 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UPA2803T1L-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

80 A

40 mJ

20 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0058 ohm

20 A

DUAL

R-PDSO-N8

DRAIN

Not Qualified

e3

UPA2800T1L-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

102 A

28.9 mJ

17 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0073 ohm

17 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UPA2802T1L-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

72 A

32.4 mJ

18 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0058 ohm

18 A

DUAL

R-PDSO-N8

DRAIN

Not Qualified

e3

UPA2810T1L-E1-AY

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

78 A

16.9 mJ

13 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.012 ohm

13 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UPA2802T1L-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

72 A

32.4 mJ

18 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0058 ohm

18 A

DUAL

R-PDSO-N8

DRAIN

Not Qualified

e3

UPA2810T1L-E2-AY

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

78 A

16.9 mJ

13 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.012 ohm

13 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

e3

UPA2801T1L-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

96 A

25.6 mJ

16 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0096 ohm

16 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

e3

IRFW510A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

63 mJ

5.6 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.4 ohm

5.6 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

IRFW14A

Samsung

N-CHANNEL

SINGLE

YES

3.8 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

10 A

IRFW520A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

37 A

113 mJ

9.2 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.2 ohm

9.2 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

IRFW550A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

160 A

640 mJ

40 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.04 ohm

40 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

IRFW530A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

56 A

261 mJ

14 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.11 ohm

14 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

IRFW540A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

110 A

523 mJ

28 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.052 ohm

28 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

IRFI520A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3.8 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

37 A

113 mJ

9.2 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.2 ohm

9.2 A

SINGLE

R-PSIP-T3

Not Qualified

IRFI550A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3.8 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

160 A

640 mJ

40 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.04 ohm

40 A

SINGLE

R-PSIP-T3

Not Qualified

IRFI530A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3.8 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

56 A

261 mJ

14 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.11 ohm

14 A

SINGLE

R-PSIP-T3

Not Qualified

IRFI540A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3.8 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

110 A

523 mJ

28 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.052 ohm

28 A

SINGLE

R-PSIP-T3

Not Qualified

IRFIZ14A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3.8 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

86 mJ

10 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.14 ohm

10 A

SINGLE

R-PSIP-T3

Not Qualified

IRFI510A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

3.8 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

63 mJ

5.6 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.4 ohm

5.6 A

SINGLE

R-PSIP-T3

Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.