UPA2803T1L-E1-AY by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	UPA2803T1L-E1-AY
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.8 W; Transistor Element Material: SILICON; Maximum Pulsed Drain Current (IDM): 80 A;
Datasheet	UPA2803T1L-E1-AY Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	20 A
Maximum Pulsed Drain Current (IDM):	80 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	8
Maximum Power Dissipation (Abs):	3.8 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-N8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0058 ohm
Avalanche Energy Rating (EAS):	40 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	20 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	20 A

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