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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSZ086P03NS3EGATMA1 |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Transistor Application: SWITCHING; Maximum Operating Temperature: 150 Cel; |
| Datasheet | BSZ086P03NS3EGATMA1 Datasheet |
| In Stock | 18,362 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 13.5 A |
| Maximum Pulsed Drain Current (IDM): | 160 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 8 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | S-PDSO-N8 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0134 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 105 mJ |
| Other Names: |
BSZ086P03NS3E GCT-ND BSZ086P03NS3EGATMA1DKR BSZ086P03NS3EG BSZ086P03NS3EGATMA1CT BSZ086P03NS3E G-ND SP000473016 BSZ086P03NS3E GDKR-ND BSZ086P03NS3E G BSZ086P03NS3E GCT BSZ086P03NS3E GDKR BSZ086P03NS3E GTR-ND BSZ086P03NS3EGATMA1TR |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 30 V |
| Qualification: | Not Qualified |
| Additional Features: | ESD PROTECTED |
