Infineon Technologies - BSZ086P03NS3EGATMA1

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BSZ086P03NS3EGATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSZ086P03NS3EGATMA1
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Transistor Application: SWITCHING; Maximum Operating Temperature: 150 Cel;
Datasheet BSZ086P03NS3EGATMA1 Datasheet
In Stock18,362
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 13.5 A
Maximum Pulsed Drain Current (IDM): 160 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0134 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 105 mJ
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Additional Features: ESD PROTECTED
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