300 W Power Field Effect Transistors (FET) 924

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
BUK9504-40A,127	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	794 A	1600 mJ	75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0059 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3
BUK7E2R7-30B,127	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	967 A	2300 mJ	75 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0027 ohm	75 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-262AA	e3
BUK7610-55AL,118	NXP Semiconductors	N-CHANNEL	SINGLE	YES	300 W						ENHANCEMENT MODE	1			122 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					TIN		122 A			1					e3	30	245
BUK7510-55AL,127	NXP Semiconductors	N-CHANNEL	SINGLE	NO	300 W						ENHANCEMENT MODE	1			122 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					Tin (Sn)		122 A								e3
BUK7506-75B	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	75 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	638 A	852 mJ	75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0056 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
BUK9610-100B,118	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	438 A	629 mJ	75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.011 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	245
BUK7E2R7-30B	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	967 A	2300 mJ	75 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0027 ohm	75 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-262AA	e3
BUK7604-40A	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	36 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	794 A	1600 mJ	75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Tin (Sn)	.0045 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	245
BUK952R8-30B	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	950 A	2300 mJ	75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.003 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3
BUK9E04-40A	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	794 A	1600 mJ	75 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0059 ohm	75 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-262AA	e3
BUK963R2-40B,118	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	888 A	1200 mJ	222 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0035 ohm	100 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	245
BUK7504-40A	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	794 A	1600 mJ	75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0045 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
BUK9506-75B,127	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	75 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	612 A	852 mJ	75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0066 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3
PSMN020-150W	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	290 A	707 mJ	73 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.02 ohm	73 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247	e3
BUK9604-40A,118	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	794 A	1600 mJ	75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Tin (Sn)	.0059 ohm	198 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	245
BUK9504-40A	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	794 A	1600 mJ	75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0059 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3
BUK754R0-55B,127	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	774 A	1200 mJ	75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.004 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
BUK762R7-30B	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	967 A	2300 mJ	75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Tin (Sn)	.0027 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	245
BUK7610-100B	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	438 A	629 mJ	75 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Tin (Sn)	.01 ohm	75 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	245
BUK752R7-30B,127	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	967 A	2300 mJ	75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0027 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3
BUK7504-40A,127	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	794 A	1600 mJ	75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0045 ohm	75 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
IRFV460U	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	UNSPECIFIED	SWITCHING	500 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	84 A	480 mJ	21 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.31 ohm	21 A	SINGLE	R-XSFM-P3		ISOLATED	Not Qualified		TO-258AA	e0
BSPP80N06S2-H5	Infineon Technologies	N-CHANNEL	SINGLE	NO	300 W						ENHANCEMENT MODE	1			80 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel							80 A
BSPB100N08S2L-07	Infineon Technologies	N-CHANNEL	SINGLE	YES	300 W						ENHANCEMENT MODE	1			100 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel							100 A
JANSR2N7425U	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	152 A	500 mJ	38 A	3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	205 ns	-55 Cel	380 ns	TIN LEAD	.071 ohm	38 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified			e0				MIL-19500; RH - 100K Rad(Si)
IRFV064D	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	UNSPECIFIED	SWITCHING	60 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	400 A	620 mJ	45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.017 ohm	45 A	SINGLE	R-XSFM-P3		ISOLATED	Not Qualified		TO-258AA	e0
BSPB80N06S2L-H5	Infineon Technologies	N-CHANNEL	SINGLE	YES	300 W						ENHANCEMENT MODE	1			80 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel							80 A
IPI80N08S2-07	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY		75 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	810 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0074 ohm	80 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-262AB	e3
IRHA7260	Infineon Technologies	N-CHANNEL	SINGLE	YES	300 W						ENHANCEMENT MODE	1			43 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Lead (Sn/Pb)		43 A								e0
BSPP80N06S2L-H5	Infineon Technologies	N-CHANNEL	SINGLE	NO	300 W						ENHANCEMENT MODE	1			80 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel							80 A
BSPI80N08S2-07R	Infineon Technologies	N-CHANNEL	SINGLE	NO	300 W						ENHANCEMENT MODE	1			80 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel							80 A
IRHA8260	Infineon Technologies	N-CHANNEL	SINGLE	YES	300 W						ENHANCEMENT MODE	1			43 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Lead (Sn/Pb)		43 A								e0
IRFV460D	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	UNSPECIFIED	SWITCHING	500 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	84 A	480 mJ	21 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.31 ohm	21 A	SINGLE	R-XSFM-P3		ISOLATED	Not Qualified		TO-258AA	e0
BSPB80N06S2-H5	Infineon Technologies	N-CHANNEL	SINGLE	YES	300 W						ENHANCEMENT MODE	1			80 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel							80 A
IRFV064	Infineon Technologies	N-CHANNEL	SINGLE	NO	300 W	UNSPECIFIED	SWITCHING	60 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	400 A	620 mJ	45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.017 ohm	45 A	SINGLE	R-XSFM-P3		ISOLATED	Not Qualified		TO-258AA	e0
IPP330P10NM	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	248 A	1960 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.033 ohm	62 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB				190 pF
IRFV064U	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	UNSPECIFIED	SWITCHING	60 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	400 A	620 mJ	45 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.017 ohm	45 A	SINGLE	R-XSFM-P3		ISOLATED	Not Qualified		TO-258AA	e0
IPI120N04S3-02	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY		40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	480 A	1880 mJ	120 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0023 ohm	120 A	SINGLE	R-PSIP-T3	1		Not Qualified	ULTRA LOW RESISTANCE	TO-262AA	e3		260
BSPB80N06S2-05	Infineon Technologies	N-CHANNEL	SINGLE	YES	300 W						ENHANCEMENT MODE	1			80 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel							80 A
IPB720P15LM	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY		150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	164 A	2020 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.072 ohm	41 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	260	110 pF
BSPP100N08S2L-07	Infineon Technologies	N-CHANNEL	SINGLE	NO	300 W						ENHANCEMENT MODE	1			100 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel							100 A
JANSF2N7425U	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	152 A	500 mJ	38 A	3	CHIP CARRIER	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	205 ns	-55 Cel	380 ns	TIN LEAD	.071 ohm	38 A	BOTTOM	R-CBCC-N3		DRAIN	Qualified			e0				MIL-19500; RH - 300K Rad(Si)
IRFV360U	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	UNSPECIFIED	SWITCHING	400 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	100 A	980 mJ	25 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.23 ohm	25 A	SINGLE	R-XSFM-P3		ISOLATED	Not Qualified		TO-258AA	e0
BSPP100N08S2-07	Infineon Technologies	N-CHANNEL	SINGLE	NO	300 W						ENHANCEMENT MODE	1			100 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel							100 A
IPB330P10NM	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	248 A	1960 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.033 ohm	62 A	SINGLE	R-PSSO-G2		DRAIN			TO-263AB				190 pF
IRHI7460SE	Infineon Technologies	N-CHANNEL	SINGLE	NO	300 W	METAL	SWITCHING	500 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1			20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.2 ohm	20.1 A	SINGLE	R-MSFM-P3			Not Qualified		TO-259AA	e0
IPI100N08S2-07	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY		75 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	400 A	810 mJ	100 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0071 ohm	100 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-262AB	e3
IPI80N04S2-0H4	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY		40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	660 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.004 ohm	80 A	SINGLE	R-PSIP-T3			Not Qualified	AVALANCHE RATED	TO-262AA	e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.