300 W Power Field Effect Transistors (FET) 924

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
STH400N4F6-6	STMicroelectronics	N-CHANNEL	SINGLE	YES	300 W							1			180 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel					180 A									NOT SPECIFIED	NOT SPECIFIED
STI76NF75	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	75 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	700 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.011 ohm	80 A	SINGLE	R-PSIP-T3			Not Qualified		TO-262AA	e3
STH200N55F3-2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	640 A	1000 mJ	160 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.0026 ohm	160 A	SINGLE	R-PSSO-G2			Not Qualified	AVALANCHE RATED, ULTRA-LOW RESISTANCE
ST160NF3LLT4	STMicroelectronics	N-CHANNEL	SINGLE	YES	300 W						ENHANCEMENT MODE	1			160 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel			Matte Tin (Sn)		160 A								e3
STY25NA60	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A	3000 mJ	25 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.24 ohm	25 A	SINGLE	R-PSIP-T3			Not Qualified	AVALANCHE RATED		e0
STP75N15	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A		75 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.023 ohm	75 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB
STH400N4F6-2	STMicroelectronics	N-CHANNEL	SINGLE	YES	300 W							1			180 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel					180 A									NOT SPECIFIED	NOT SPECIFIED
STW80NF10	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	245 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN LEAD	.015 ohm	80 A	SINGLE	R-PSFM-T3			Not Qualified		TO-247	e0
STW80NF12	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	120 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	700 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.018 ohm	80 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-247	e3
ST160NF3LL	STMicroelectronics	N-CHANNEL	SINGLE	YES	300 W						ENHANCEMENT MODE	1			160 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel			Matte Tin (Sn)		160 A								e3
STW90NF20	STMicroelectronics	N-CHANNEL	SINGLE	NO	300 W	PLASTIC/EPOXY			THROUGH-HOLE	RECTANGULAR		1			83 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			Matte Tin (Sn)		83 A	SINGLE	R-PSFM-T3			Not Qualified		TO-247AD	e3
TSD2M350V	STMicroelectronics				300 W							1			30 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					30 A
STH260N6F6-6	STMicroelectronics	N-CHANNEL	SINGLE	YES	300 W							1			180 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel					180 A									NOT SPECIFIED	NOT SPECIFIED
STI360N4F6	STMicroelectronics	N-CHANNEL	SINGLE	NO	300 W							1			120 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel					120 A									NOT SPECIFIED	NOT SPECIFIED
STH240N10F7-6	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	720 A	500 mJ	180 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0025 ohm	180 A	SINGLE	R-PSSO-G6	1	DRAIN		ULTRA LOW RESISTANCE		e3		260
STB210NF02-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	20 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	480 A	2300 mJ	120 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.0032 ohm	120 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-262AA
STB80NF12T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	120 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	700 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN LEAD	.018 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB	e0
STH300NH02L-6	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	24 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	720 A	1600 mJ	180 A	6	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.0012 ohm	180 A	SINGLE	R-PSSO-G6		DRAIN					NOT SPECIFIED	NOT SPECIFIED
STP100NF04L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	400 A	1400 mJ	100 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN LEAD	.0065 ohm	100 A	SINGLE	R-PSFM-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e0
STP46NF30	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	168 A	290 mJ	42 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	Matte Tin (Sn)	.075 ohm	42 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB	e3
STB85NF55T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	980 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn) - annealed	.008 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
STH140N10F4-2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	480 A	1000 mJ	120 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.0085 ohm	120 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
STW56NM60N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A		45 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.06 ohm	45 A	SINGLE	R-PSFM-T3					TO-247		NOT SPECIFIED	NOT SPECIFIED
STP150NF55	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	480 A	850 mJ	120 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.006 ohm	120 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
STB100NF04L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A	1400 mJ	100 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn)	.0065 ohm	100 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-263AB	e3
STP150NF04	STMicroelectronics	N-CHANNEL	SINGLE	NO	300 W							1			80 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel			MATTE TIN		80 A								e3
STP80NF55L-08	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	870 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.01 ohm	80 A	SINGLE	R-PSFM-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3
STB140N10F4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	560 A		140 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.0065 ohm	140 A	SINGLE	R-PSSO-G2			Not Qualified		TO-263AB
STB210NF02T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	480 A	2300 mJ	120 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN LEAD	.0032 ohm	120 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB	e0
STB141NF55	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	1300 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	.008 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	245	290 pF
STP200NF04L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	40 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	480 A	1400 mJ	120 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0038 ohm	120 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
STP80NF06	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	870 mJ	80 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.008 ohm	80 A	SINGLE	R-PSFM-T3			Not Qualified	LOW THRESHOLD	TO-220AB	e3
STW150NF55	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	480 A	850 mJ	120 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.006 ohm	120 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-247	e3
STB160NF3LLT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	640 A	1200 mJ	160 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn)	.004 ohm	160 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-263AB	e3
STB200NF03T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	480 A	1450 mJ	120 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0036 ohm	120 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED		e3
STY60NA20	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	3000 mJ	60 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.032 ohm	60 A	SINGLE	R-PSIP-T3			Not Qualified
STP265N6F6AG	STMicroelectronics	N-CHANNEL	SINGLE	NO	300 W							1			180 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					180 A									NOT SPECIFIED	NOT SPECIFIED
STH320N4F6-6	STMicroelectronics	N-CHANNEL	SINGLE	YES	300 W							1			200 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	175 Cel			MATTE TIN		200 A			1					e3		260
STP155N75F4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	75 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	480 A		120 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.0058 ohm	120 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE ENERGY RATED	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
STB75NF75L-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	75 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A	680 mJ	75 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN LEAD	.013 ohm	75 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-262AA	e0
STB85NF55	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	980 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.008 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB	e3
STB80NF12	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	120 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	700 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.018 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB	e3
STB160NF03LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	640 A	2000 mJ	160 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN LEAD	.007 ohm	160 A	SINGLE	R-PSSO-G2			Not Qualified		TO-263AB	e0
STB140NF55	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	1300 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.008 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3
STV200N55F3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	800 A	1000 mJ	200 A	10	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		SILICON		MATTE TIN	.0025 ohm	200 A	DUAL	R-PDSO-G10	3	DRAIN	Not Qualified			e3	30	250
STB85NF55L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	300 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	980 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.01 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-263AB	e3
STB80NF75L-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	75 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	930 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN LEAD	.013 ohm	80 A	SINGLE	R-PSIP-T3			Not Qualified		TO-262AA	e0
STB200NF03-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	300 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	480 A	1450 mJ	120 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0036 ohm	120 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-262AA	e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.