Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
50 A |
24 mJ |
31 A |
5 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Nickel/Palladium/Gold (Ni/Pd/Au) |
.02 ohm |
8.5 A |
DUAL |
S-PDSO-N5 |
1 |
DRAIN |
Not Qualified |
ULTRA-LOW RESISTANCE |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
30 A |
37 mJ |
16 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
.056 ohm |
4 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
Not Qualified |
ULTRA-LOW RESISTANCE |
MO-240BA |
e4 |
30 |
260 |
||||||||||||||||
|
Onsemi |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
15 A |
13 mJ |
2.7 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.105 ohm |
2.7 A |
DUAL |
R-PDSO-G8 |
1 |
ULTRA-LOW RESISTANCE |
e3 |
30 |
260 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
30 A |
12 mJ |
16.5 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.056 ohm |
4.8 A |
DUAL |
R-PDSO-N5 |
1 |
DRAIN |
ULTRA-LOW RESISTANCE |
MO-240AA |
e3 |
30 |
260 |
|||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
60 A |
25 A |
3 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
40 ns |
-55 Cel |
80 ns |
PURE MATTE TIN |
.01 ohm |
25 A |
DUAL |
R-PDSO-N3 |
1 |
DRAIN |
115 pF |
|||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 W |
UNSPECIFIED |
SWITCHING |
60 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
25 A |
11.2 mJ |
12 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.034 ohm |
12 A |
DUAL |
R-XDSO-N3 |
1 |
DRAIN |
Not Qualified |
e3 |
||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
C BEND |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
11 mJ |
25 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.0043 ohm |
25 A |
DUAL |
R-PDSO-C5 |
1 |
DRAIN |
e3 |
30 |
260 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
31 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
30.6 A |
211.6 mJ |
10.2 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.38 ohm |
10.2 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
31 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
30.6 A |
211.6 mJ |
10.2 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
62 ns |
-55 Cel |
122 ns |
MATTE TIN |
.38 ohm |
10.2 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
60 pF |
||||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
31 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
30.6 A |
211.6 mJ |
10.2 A |
3 |
FLANGE MOUNT |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.38 ohm |
10.2 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
|||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
31 W |
PLASTIC/EPOXY |
SWITCHING |
609 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
18 A |
43 mJ |
7 A |
3 |
FLANGE MOUNT |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
52 ns |
-55 Cel |
76 ns |
Pure Matte Tin (Sn) - annealed |
.6 ohm |
7 A |
SINGLE |
R-PSFM-T3 |
1 |
ISOLATED |
AVALANCHE RATED |
TO-220AB |
30 |
260 |
5 pF |
||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
40 A |
12 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.02 ohm |
12 A |
DUAL |
R-PDSO-N3 |
1 |
DRAIN |
e3 |
30 |
260 |
||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE |
YES |
31 W |
ENHANCEMENT MODE |
1 |
12 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
12 A |
||||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
31 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
30 A |
57 mJ |
12 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.25 ohm |
12 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
|||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
11.25 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
120 ns |
-55 Cel |
86 ns |
Tin (Sn) |
.00775 ohm |
25 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
e3 |
30 |
260 |
45 pF |
|||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
31 W |
PLASTIC/EPOXY |
SWITCHING |
800 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
32.5 A |
40 mJ |
13 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.36 ohm |
13 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
80 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
76 mJ |
6.3 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.032 ohm |
6.3 A |
DUAL |
R-PDSO-X5 |
DRAIN |
NOT SPECIFIED |
NOT SPECIFIED |
3.6 pF |
AEC-Q101 |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
80 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
80 A |
76 mJ |
6.3 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.032 ohm |
6.3 A |
DUAL |
S-PDSO-F8 |
1 |
DRAIN |
e3 |
30 |
260 |
3.6 pF |
AEC-Q101 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
30 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
253 A |
20 mJ |
55 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0059 ohm |
55 A |
DUAL |
S-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
31 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
30 A |
57 mJ |
12 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.25 ohm |
12 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
31 W |
1 |
10.2 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Matte Tin (Sn) - annealed |
10.2 A |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
31 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
21 A |
230 mJ |
7 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.6 ohm |
7 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
60 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
128 A |
17 mJ |
27 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0203 ohm |
27 A |
DUAL |
S-PDSO-F8 |
1 |
DRAIN |
e3 |
30 |
260 |
4.9 pF |
AEC-Q101 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
31 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
30 A |
211.6 mJ |
10 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.4 ohm |
10 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
30 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
253 A |
20 mJ |
55 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0059 ohm |
55 A |
DUAL |
S-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
98 A |
16 mJ |
27 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0203 ohm |
27 A |
DUAL |
R-PDSO-F8 |
1 |
DRAIN |
e3 |
30 |
260 |
4.9 pF |
AEC-Q101 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
80 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
80 A |
76 mJ |
21 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.053 ohm |
21 A |
DUAL |
S-PDSO-F8 |
1 |
DRAIN |
e3 |
30 |
260 |
3.6 pF |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
70 A |
54 mJ |
19.5 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Nickel/Palladium/Gold (Ni/Pd/Au) |
.0053 ohm |
17.5 A |
DUAL |
S-PDSO-N5 |
1 |
DRAIN |
Not Qualified |
ULTRA-LOW RESISTANCE |
MO-240BA |
e4 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
31 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
21 A |
230 mJ |
7 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.6 ohm |
7 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
60 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
128 A |
17 mJ |
27 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0203 ohm |
27 A |
DUAL |
S-PDSO-F8 |
1 |
DRAIN |
e3 |
30 |
260 |
4.9 pF |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
98 A |
16 mJ |
27 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.0203 ohm |
27 A |
DUAL |
R-PDSO-F8 |
DRAIN |
NOT SPECIFIED |
NOT SPECIFIED |
4.9 pF |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
98 A |
16 mJ |
27 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.0203 ohm |
27 A |
DUAL |
R-PDSO-F8 |
DRAIN |
NOT SPECIFIED |
NOT SPECIFIED |
4.9 pF |
AEC-Q101 |
|||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
50 A |
32 mJ |
18 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
38 ns |
-55 Cel |
90 ns |
.02 ohm |
18 A |
DUAL |
S-PDSO-N5 |
DRAIN |
NOT SPECIFIED |
NOT SPECIFIED |
420 pF |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
60 A |
38 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD SILVER |
.014 ohm |
9.6 A |
DUAL |
S-PDSO-N5 |
1 |
DRAIN |
Not Qualified |
e4 |
30 |
260 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
18 A |
37 mJ |
3.5 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.062 ohm |
3.5 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
ULTRA-LOW RESISTANCE |
e3 |
30 |
260 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
31 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
30.6 A |
211.6 mJ |
10.2 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
72 ns |
-55 Cel |
168 ns |
Matte Tin (Sn) - annealed |
.38 ohm |
10.2 A |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
90 pF |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
30 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
253 A |
20 mJ |
55 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0059 ohm |
55 A |
DUAL |
S-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
181 A |
15 mJ |
28 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0196 ohm |
28 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
4.9 pF |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
80 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
80 A |
76 mJ |
6.3 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.032 ohm |
6.3 A |
DUAL |
S-PDSO-F8 |
1 |
DRAIN |
e3 |
30 |
260 |
3.6 pF |
AEC-Q101 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
181 A |
15 mJ |
28 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0196 ohm |
28 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
4.9 pF |
AEC-Q101 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
181 A |
15 mJ |
28 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0196 ohm |
28 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
4.9 pF |
AEC-Q101 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
30 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
253 A |
20 mJ |
55 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0059 ohm |
55 A |
DUAL |
S-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
60 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
128 A |
17 mJ |
27 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0203 ohm |
27 A |
DUAL |
S-PDSO-F8 |
1 |
DRAIN |
e3 |
30 |
260 |
4.9 pF |
AEC-Q101 |
||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
31 W |
ENHANCEMENT MODE |
1 |
10 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Matte Tin (Sn) |
10 A |
e3 |
||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
31 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
162 A |
23.5 mJ |
40 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.014 ohm |
40 A |
SINGLE |
R-PSSO-G4 |
DRAIN |
MO-235 |
IEC-60134 |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
31 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
52 A |
17 mJ |
13 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.08 ohm |
13 A |
SINGLE |
R-PSIP-T3 |
1 |
Not Qualified |
TO-262AA |
e3 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
31 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
210 A |
20 mJ |
30 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.0135 ohm |
30 A |
SINGLE |
R-PSIP-T3 |
1 |
Not Qualified |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
TO-251 |
e3 |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
31 W |
PLASTIC/EPOXY |
30 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
88 A |
20 mJ |
22 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.0149 ohm |
22 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
ULTRA LOW RESISTANCE |
TO-262AA |
NOT SPECIFIED |
NOT SPECIFIED |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.