31 W Power Field Effect Transistors (FET) 83

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IPB79CN10NG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

31 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

52 A

17 mJ

13 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.079 ohm

13 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

245

IPU78CN10NG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

17 mJ

13 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.078 ohm

13 A

SINGLE

R-PSIP-T3

1

Not Qualified

TO-251AA

e3

IPU135N03LG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

210 A

20 mJ

30 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0135 ohm

30 A

SINGLE

R-PSIP-T3

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-251AA

e3

IPF135N03LG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

31 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

210 A

20 mJ

30 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0135 ohm

30 A

SINGLE

R-PSSO-G3

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-252

e3

SPA04N60C2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

9 A

130 mJ

3.3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.95 ohm

4.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

e0

SPA04N60C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

13.5 A

130 mJ

3.3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.95 ohm

4.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

SPA04N50C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

13.5 A

130 mJ

4.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.95 ohm

4.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IPA50R399CP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

215 mJ

9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.399 ohm

9 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IPA65R380C6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

29 A

215 mJ

10.6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.38 ohm

10.6 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

IPA60R380P6XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

29 A

210 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.38 ohm

10.6 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

BSC090N03LSG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

31 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

192 A

10 mJ

47 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0133 ohm

13 A

DUAL

R-PDSO-F8

1

DRAIN

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

IRLIZ34NPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

110 A

110 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.046 ohm

22 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IPD135N03LG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

31 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

210 A

20 mJ

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0135 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-252AA

e3

260

IPD160N04LG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

31 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

210 A

5 mJ

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.016 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252AA

e3

260

IPA60R380E6XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

210 mJ

10.6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.38 ohm

10.6 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

IPD78CN10NG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

31 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

52 A

17 mJ

13 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.078 ohm

13 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

260

IPA90R1K2C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

68 mJ

5.1 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

1.2 ohm

3.1 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

IPA65R380E6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

29 A

215 mJ

10.6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.38 ohm

10.6 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

IPB147N03LG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

31 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

140 A

20 mJ

20 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0217 ohm

20 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-263AB

245

IPA60R380E6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

210 mJ

10.6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.38 ohm

10.6 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

IPA60R380C6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

210 mJ

10.6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.38 ohm

10.6 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

HIGH VOLTAGE

TO-220AB

e3

IPB22N03S4L-15

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

31 W

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

88 A

20 mJ

22 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0146 ohm

22 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

ULTRA LOW RESISTANCE

TO-263AB

245

IPA60R385CP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

27 A

227 mJ

9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.385 ohm

9 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

IPP80CN10NG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

17 mJ

13 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.08 ohm

13 A

SINGLE

R-PSFM-T3

1

Not Qualified

TO-220AB

e3

IPP147N03LG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

140 A

20 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0217 ohm

20 A

SINGLE

R-PSFM-T3

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-220AB

e3

IPB80CN10NG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

31 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

52 A

17 mJ

13 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.08 ohm

13 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

IPD30N03S4L-14

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

31 W

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

16 mJ

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0136 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

260

IRLI3303

Infineon Technologies

N-CHANNEL

SINGLE

NO

31 W

ENHANCEMENT MODE

1

25 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin/Lead (Sn/Pb)

25 A

e0

IPP22N03S4L-15

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 W

PLASTIC/EPOXY

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

88 A

20 mJ

22 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0149 ohm

22 A

SINGLE

R-PSFM-T3

Not Qualified

ULTRA LOW RESISTANCE

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IPD170N04NG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

31 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

210 A

5 mJ

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.017 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

260

DMJ65H650SCTI

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

31 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

67.5 mJ

10 A

3

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.6 ohm

10 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

260

IRLW14A

Samsung

N-CHANNEL

SINGLE

YES

31 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

10 A

IRLZ14A

Samsung

N-CHANNEL

SINGLE

NO

31 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

10 A

IRLIZ14A

Samsung

N-CHANNEL

SINGLE

NO

31 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

10 A

IRLSZ24A

Samsung

N-CHANNEL

SINGLE

NO

31 W

ENHANCEMENT MODE

1

14 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

14 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.