32 W Power Field Effect Transistors (FET) 82

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

DMN6069SFVW-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

32 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

56 A

7.2 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.069 ohm

4 A

DUAL

S-PDSO-F8

DRAIN

e3

260

28 pF

MIL-STD-202

DMN6069SFVWQ-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

32 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

56 A

7.2 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.069 ohm

4 A

DUAL

S-PDSO-F8

DRAIN

e3

260

28 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMN6069SFVW-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

32 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

56 A

7.2 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.069 ohm

4 A

DUAL

S-PDSO-F8

DRAIN

e3

260

28 pF

MIL-STD-202

DMN6069SFVWQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

32 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

56 A

7.2 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.069 ohm

4 A

DUAL

S-PDSO-F8

DRAIN

e3

260

28 pF

AEC-Q101; IATF 16949; MIL-STD-202

TPCC8084(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

32 W

ENHANCEMENT MODE

1

21 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

21 A

TPN6R003NL(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

32 W

ENHANCEMENT MODE

1

27 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

27 A

TPN6R003NL(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

32 W

ENHANCEMENT MODE

1

27 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

27 A

TPCC8084(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

32 W

ENHANCEMENT MODE

1

21 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

21 A

TPH14006NH(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

32 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

34 A

TPH14006NH(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

32 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

34 A

TPH14006NH(TE12L1,Q)

Toshiba

N-CHANNEL

SINGLE

YES

32 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

34 A

TPH14006NH,L1Q(M

Toshiba

N-CHANNEL

SINGLE

YES

32 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

34 A

TPH14006NH(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

32 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

34 A

RJK4007DPP-00#T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

32 W

ENHANCEMENT MODE

1

7.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

7.6 A

1

20

260

RJK4007DPP-M0-T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

7.6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.55 ohm

7.6 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

RJK4007DPP-00-T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

32 W

1

7.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

7.6 A

1

20

260

RJK4007DPP-M0#T2

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

7.6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.55 ohm

7.6 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

4AK23

Renesas Electronics

N-CHANNEL

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

20 A

5 A

12

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.35 ohm

5 A

SINGLE

R-PSFM-T12

Not Qualified

2SJ673-AZ

Renesas Electronics

P-CHANNEL

SINGLE

NO

32 W

1

36 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

36 A

10

260

2SJ673

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

144 A

130 mJ

36 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.031 ohm

36 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

IXTP8N70X2M

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

700 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

250 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.55 ohm

8 A

SINGLE

R-PSFM-T3

ISOLATED

AVALANCHE RATED

TO-220AB

2.2 pF

SFW9510

Samsung

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

32 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

14 A

52 mJ

3.6 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

1.2 ohm

3.6 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

SFP9510

Samsung

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

14 A

52 mJ

3.6 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

1.2 ohm

3.6 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

SFU2955

Samsung

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

99 mJ

7.6 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.3 ohm

7.6 A

SINGLE

R-PSIP-T3

Not Qualified

SFR2955

Samsung

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

32 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

99 mJ

7.6 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.3 ohm

7.6 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

SFI9510

Samsung

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

14 A

52 mJ

3.6 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

1.2 ohm

3.6 A

SINGLE

R-PSIP-T3

Not Qualified

SFU9024

Samsung

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

31 A

104 mJ

7.8 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.28 ohm

7.8 A

SINGLE

R-PSIP-T3

Not Qualified

SFR9024

Samsung

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

32 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

31 A

104 mJ

7.8 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.28 ohm

7.8 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

SFR9120

Samsung

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

32 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

96 mJ

4.9 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.6 ohm

4.9 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

SFU9120

Samsung

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

96 mJ

4.9 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.6 ohm

4.9 A

SINGLE

R-PSIP-T3

Not Qualified

IRFR120A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

32 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

34 A

141 mJ

8.4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.2 ohm

8.4 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

IRFS620A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

78 mJ

4.1 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.8 ohm

4.1 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

IRFS530A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

43 A

229 mJ

11 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.11 ohm

10.7 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

IRFU120A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

34 A

141 mJ

8.4 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.2 ohm

8.4 A

SINGLE

R-PSIP-T3

Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.