32 W Power Field Effect Transistors (FET) 82

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BSC340N08NS3GATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

32 W

PLASTIC/EPOXY

SWITCHING

80 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

92 A

20 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.034 ohm

23 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

e3

BSC340N08NS3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

32 W

PLASTIC/EPOXY

SWITCHING

80 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

92 A

20 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.034 ohm

23 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

e3

40

260

BSZ340N08NS3GATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

32 W

PLASTIC/EPOXY

SWITCHING

80 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

92 A

20 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.034 ohm

23 A

DUAL

S-PDSO-N8

1

DRAIN

Not Qualified

e3

BUK7K25-40E,115

NXP Semiconductors

N-CHANNEL

YES

32 W

ENHANCEMENT MODE

27 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

27 A

1

e3

30

260

IPA60R280P6XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

39 A

285 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.28 ohm

13.8 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

IPA60R280P6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

39 A

285 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.28 ohm

13.8 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

STP9NK60ZFP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

235 mJ

7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.95 ohm

7 A

SINGLE

R-PSFM-T3

1

ISOLATED

Not Qualified

TO-220AB

e3

FCD3400N80Z

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

32 W

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

12.8 mJ

2 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

53 ns

-55 Cel

93 ns

Matte Tin (Sn) - annealed

3.4 ohm

2 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e3

30

245

SFR9024TM

Fairchild Semiconductor

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

32 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

31 A

104 mJ

7.8 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.28 ohm

7.8 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

BUK9K52-60E,115

NXP Semiconductors

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

32 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

64 A

11.9 mJ

17 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.055 ohm

16 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

e3

30

260

AEC-Q101; IEC-60134

STP6NK60ZFP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

210 mJ

6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.2 ohm

6 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

SPA07N60CFD

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

17 A

230 mJ

6.6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.7 ohm

6.6 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

NTPF190N65S3H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

45 A

142 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.19 ohm

16 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

FCU340080Z

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

4 A

12.8 mJ

2 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

53 ns

-55 Cel

93 ns

3.4 ohm

2 A

SINGLE

R-PSIP-T3

TO-251AA

NOT SPECIFIED

NOT SPECIFIED

.36 pF

FCD340080Z

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

32 W

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

12.8 mJ

2 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

53 ns

-55 Cel

93 ns

3.4 ohm

2 A

SINGLE

R-PSSO-G2

DRAIN

TO-252AA

NOT SPECIFIED

NOT SPECIFIED

.36 pF

FCU3400N80Z

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

4 A

12.8 mJ

2 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

53 ns

-55 Cel

93 ns

MATTE TIN

3.4 ohm

2 A

SINGLE

R-PSIP-T3

TO-251AA

e3

NVMFD5875NLWFT3G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

32 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

40 mJ

22 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

11.3 ns

-55 Cel

15.7 ns

TIN

.045 ohm

7 A

DUAL

R-PDSO-F8

1

e3

30

260

AEC-Q101

NVMFD5875NLT3G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

32 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

40 mJ

22 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

11.3 ns

-55 Cel

15.7 ns

MATTE TIN

.045 ohm

7 A

DUAL

R-PDSO-F8

1

e3

30

260

AEC-Q101

NTMFD5875NLT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

32 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

40 mJ

7 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.045 ohm

7 A

DUAL

R-PDSO-F6

DRAIN

NOT SPECIFIED

NOT SPECIFIED

36 pF

NVMFD5875NLWFT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

32 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

40 mJ

22 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

11.3 ns

-55 Cel

15.7 ns

MATTE TIN

.045 ohm

7 A

DUAL

R-PDSO-F8

1

e3

30

260

AEC-Q101

NTMFD5875NLT3G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

32 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

40 mJ

7 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.045 ohm

7 A

DUAL

R-PDSO-F6

DRAIN

NOT SPECIFIED

NOT SPECIFIED

36 pF

NVMFD5875NLT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

32 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

40 mJ

22 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

11.3 ns

-55 Cel

15.7 ns

MATTE TIN

.045 ohm

7 A

DUAL

R-PDSO-F8

1

e3

30

260

AEC-Q101

STF9NK60ZFD

STMicroelectronics

N-CHANNEL

SINGLE

NO

32 W

ENHANCEMENT MODE

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

7 A

e3

STF9NK60ZD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

235 mJ

7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.95 ohm

7 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

STP9NK60ZFDFP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

280 mJ

7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.95 ohm

7 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

e3

BUK7720-55A,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

117 A

260 mJ

29 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.02 ohm

29 A

SINGLE

R-PSFM-T3

NOT APPLICABLE

ISOLATED

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

BSZ340N08NS3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

32 W

PLASTIC/EPOXY

SWITCHING

80 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

92 A

20 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.034 ohm

23 A

DUAL

S-PDSO-N5

1

DRAIN

Not Qualified

e3

260

SP001017076

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

39 A

285 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.28 ohm

13.8 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

SPA07N65C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

21.9 A

230 mJ

7.3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.6 ohm

7.3 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

SPA07N60C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

21.9 A

230 mJ

4.3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.6 ohm

7.3 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

e3

SPA07N60C2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

14.6 A

230 mJ

4.3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.6 ohm

7.3 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

e0

SPA06N60C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18.6 A

200 mJ

6.2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.75 ohm

6.2 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

e3

SPA08N50C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

22.8 A

230 mJ

7.6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.6 ohm

7.6 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IRF6811SPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

32 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

150 A

32 mJ

74 A

2

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0037 ohm

19 A

BOTTOM

R-XBCC-N2

1

DRAIN

Not Qualified

e3

IRF6811STRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

32 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

150 A

32 mJ

74 A

2

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.0037 ohm

19 A

BOTTOM

R-XBCC-N2

1

DRAIN

Not Qualified

e1

30

260

IPA50R190CEXKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

63 A

339 mJ

18.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

.19 ohm

18.5 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

BSC090N03MSG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

32 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

192 A

10 mJ

48 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0112 ohm

12 A

DUAL

R-PDSO-F8

1

DRAIN

Not Qualified

e3

260

IPA65R280E6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

39 A

290 mJ

13.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.28 ohm

13.8 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

IPA60R280C6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

284 mJ

13.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.28 ohm

13.8 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

260

IPA60R125CFD7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

66 A

78 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.125 ohm

11 A

SINGLE

R-PSFM-T3

ISOLATED

HIGH RELIABILITY

TO-220AB

e3

IPAN60R125PFD7S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

66 A

78 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

.125 ohm

25 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

IPP80R1K4P7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

8.9 A

8 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

1.4 ohm

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

e3

IPA90R1K0C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

97 mJ

5.7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1 ohm

5.7 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IPA50R350CP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

22 A

246 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.35 ohm

10 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

IRF6811STR1PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

32 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

150 A

32 mJ

74 A

2

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0037 ohm

19 A

BOTTOM

R-XBCC-N2

1

DRAIN

Not Qualified

e3

IPA65R280C6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

39 A

290 mJ

13.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.28 ohm

13.8 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

IPD80R1K4P7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

32 W

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8.9 A

8 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

1.4 ohm

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

IPA60R280E6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

32 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

284 mJ

13.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.28 ohm

13.8 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.