Infineon Technologies - IPP80R1K4P7

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IPP80R1K4P7 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IPP80R1K4P7
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 32 W; JEDEC-95 Code: TO-220AB; Maximum Drain-Source On Resistance: 1.4 ohm;
Datasheet IPP80R1K4P7 Datasheet
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NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Pulsed Drain Current (IDM): 8.9 A
Surface Mount: NO
Terminal Finish: TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 32 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 1.4 ohm
Avalanche Energy Rating (EAS): 8 mJ
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 800 V
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