Infineon Technologies - SPA07N60CFD

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SPA07N60CFD by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SPA07N60CFD
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 32 W; Avalanche Energy Rating (EAS): 230 mJ; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet SPA07N60CFD Datasheet
In Stock185
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 6.6 A
Maximum Pulsed Drain Current (IDM): 17 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 32 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .7 ohm
Avalanche Energy Rating (EAS): 230 mJ
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 600 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 6.6 A
Peak Reflow Temperature (C): NOT SPECIFIED
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