35 W Power Field Effect Transistors (FET) 514

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

TK58A06N1,S4X(S

Toshiba

N-CHANNEL

SINGLE

NO

35 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

100 A

TK6A55DA

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

550 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

22 A

182 mJ

5.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.48 ohm

5.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TK1K2A60F

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

134 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.2 ohm

6 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

6.8 pF

TK34A10N1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

147 A

64 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0095 ohm

75 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

TK7A80W

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

26 A

310 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.95 ohm

6.5 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

1.2 pF

TK58A06N1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

269 A

158 mJ

100 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0054 ohm

100 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

TK7A80W,S4X

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

26 A

310 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.95 ohm

6.5 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

1.2 pF

TK5A53D

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

525 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

158 mJ

5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.5 ohm

5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TK1K2A60F,S4X(S

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

134 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.2 ohm

6 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

6.8 pF

TK11A65W

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44.4 A

178 mJ

11.1 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.39 ohm

11.1 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

TK5A60D

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

189 mJ

5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.43 ohm

5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TK4A60D

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

187 mJ

4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.7 ohm

4 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TK7A50D

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

129 mJ

7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.22 ohm

7 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TJ20A10M3

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

124 mJ

20 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.09 ohm

20 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

2SK2232(T)

Toshiba

N-CHANNEL

SINGLE

NO

35 W

ENHANCEMENT MODE

1

25 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

25 A

2SK2679(Q)

Toshiba

N-CHANNEL

SINGLE

NO

35 W

ENHANCEMENT MODE

1

5.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5.5 A

2SK2679(F)

Toshiba

N-CHANNEL

SINGLE

NO

35 W

ENHANCEMENT MODE

1

5.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5.5 A

2SK3567

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

14 A

201 mJ

3.5 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2.2 ohm

3.5 A

SINGLE

R-PSFM-T3

Not Qualified

2SK2662

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

180 mJ

5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

35 W

150 Cel

SILICON

1.5 ohm

5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SK2391

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

208 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

35 W

150 Cel

SILICON

.13 ohm

20 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

2SK2965

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33 A

115 mJ

11 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.26 ohm

11 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SK2679(T)

Toshiba

N-CHANNEL

SINGLE

NO

35 W

ENHANCEMENT MODE

1

5.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5.5 A

TPN2R503NC(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

35 W

ENHANCEMENT MODE

1

45 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

45 A

2SK2662(T)

Toshiba

N-CHANNEL

SINGLE

NO

35 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

2SK2232

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

156 mJ

25 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

35 W

150 Cel

SILICON

.08 ohm

25 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

TPN2R503NC(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

35 W

ENHANCEMENT MODE

1

45 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

45 A

2SK2679

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

22 A

223 mJ

5.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

35 W

150 Cel

SILICON

1.2 ohm

5.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SK3316

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

180 mJ

5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.8 ohm

5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

TK40A10N1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

171 A

74 mJ

40 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0082 ohm

90 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

2SK2750

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

14 A

201 mJ

3.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

35 W

150 Cel

SILICON

2.2 ohm

3.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

FK7KM-12

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

21 A

7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.63 ohm

7 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

2SJ495-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

30 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.056 ohm

30 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

10

260

2SK4144-S12-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

280 A

70 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0073 ohm

70 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e6

FL12KM-7A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

350 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.4 ohm

12 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

2SJ322

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

20 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.095 ohm

20 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

2SJ139

Renesas Electronics

P-CHANNEL

SINGLE

NO

35 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

10 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.45 ohm

10 A

SINGLE

R-PSFM-T3

Not Qualified

FS30ASH-06

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

35 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.039 ohm

30 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

FX30KMJ-3

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

30 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.111 ohm

30 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

FL20KM-5A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.19 ohm

20 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

2SJ295

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

30 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.06 ohm

30 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

e0

2SK703

Renesas Electronics

N-CHANNEL

SINGLE

NO

35 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

5 A

e0

FL16KM-6A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.35 ohm

16 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

FX30KMJ-3-A8

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

30 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.111 ohm

30 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

FS30ASJ-06

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

35 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.038 ohm

30 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

H5N3007FL-M0-E#T2

Renesas Electronics

N-CHANNEL

SINGLE

NO

35 W

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

15 A

FS50ASJ-03

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

35 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

50 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.035 ohm

50 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

FL14KM-8A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

42 A

14 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.55 ohm

14 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

H5N2512CF

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

18 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.105 ohm

18 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.