Toshiba - TPN2R503NC(TE12L)

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TPN2R503NC(TE12L) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TPN2R503NC(TE12L)
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 45 A;
Datasheet TPN2R503NC(TE12L) Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 35 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 45 A
Maximum Drain Current (Abs) (ID): 45 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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