35.7 W Power Field Effect Transistors (FET) 16

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

SI7456CDP-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

35.7 W

UNSPECIFIED

SWITCHING

100 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

1

50 A

11.2 mJ

27.5 A

5

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

PURE MATTE TIN

.0235 ohm

10.3 A

DUAL

R-XDSO-C5

1

DRAIN

Not Qualified

FCPF16N60NT

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35.7 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

355 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.199 ohm

16 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

SI7850ADP-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

35.7 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

40 A

11.3 mJ

12 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

55 ns

-55 Cel

40 ns

.0195 ohm

12 A

DUAL

R-PDSO-F5

DRAIN

40

260

14 pF

FCPF400N80Z

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35.7 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33 A

339 mJ

11 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.4 ohm

11 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

FCPF400N80ZL1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35.7 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33 A

339 mJ

11 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.4 ohm

11 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

NTD4963NT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

35.7 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

132 A

33.8 mJ

44 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.016 ohm

8.1 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

260

NTD4963N-1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35.7 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

132 A

33.8 mJ

44 A

3

IN-LINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.016 ohm

8.1 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

e3

NVMYS016N06CTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

35.7 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

166 A

50 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.016 ohm

33 A

SINGLE

R-PSSO-G4

DRAIN

7 pF

AEC-Q101

NTD4963N-35G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35.7 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

132 A

33.8 mJ

44 A

3

IN-LINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.016 ohm

8.1 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

e3

30

260

FCPF400N80ZL1-F154

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35.7 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33 A

339 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

84 ns

-55 Cel

127 ns

Matte Tin (Sn) - annealed

.4 ohm

11 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

.5 pF

DMT3009LFVW-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

35.7 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

90 A

19 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.011 ohm

12 A

DUAL

S-PDSO-F8

DRAIN

e3

260

52 pF

MIL-STD-202

DMT3009LFVW-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

35.7 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

90 A

19 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.011 ohm

12 A

DUAL

S-PDSO-F8

DRAIN

e3

260

52 pF

MIL-STD-202

DMT4008LFV-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

35.7 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

SQUARE

ENHANCEMENT MODE

1

70 A

19.2 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0079 ohm

54.8 A

DUAL

S-PDSO-F8

1

DRAIN

e3

260

42 pF

MIL-STD-202

DMT3009LFVWQ-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

35.7 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

90 A

19 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.011 ohm

12 A

DUAL

S-PDSO-F8

1

DRAIN

HIGH RELIABILITY

e3

260

52 pF

AEC-Q101; MIL-STD-202

DMT4008LFV-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

35.7 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

SQUARE

ENHANCEMENT MODE

1

70 A

19.2 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0079 ohm

54.8 A

DUAL

S-PDSO-F8

1

DRAIN

e3

260

42 pF

MIL-STD-202

DMT3009LFVWQ-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

35.7 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

90 A

19 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.011 ohm

12 A

DUAL

S-PDSO-F8

1

DRAIN

HIGH RELIABILITY

e3

260

52 pF

AEC-Q101; MIL-STD-202

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.