NTD4963N-1G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTD4963N-1G
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 35.7 W; Minimum DS Breakdown Voltage: 30 V; Moisture Sensitivity Level (MSL): 1;
Datasheet	NTD4963N-1G Datasheet
In Stock	630

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	8.1 A
Maximum Pulsed Drain Current (IDM):	132 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	NO
Terminal Finish:	TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	35.7 W
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.016 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	33.8 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	44 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
630	$0.418	$263.340

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