36 W Power Field Effect Transistors (FET) 120

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

NVMFWS016N06CT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

226 A

22 mJ

33 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0156 ohm

33 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

5.7 pF

AEC-Q101

NVMFD016N06CT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

36 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

128 A

21 mJ

32 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0163 ohm

32 A

DUAL

R-PDSO-F8

DRAIN

NOT SPECIFIED

NOT SPECIFIED

5.7 pF

AEC-Q101

NVTFWS040N10MCLTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

PLASTIC/EPOXY

100 V

FLAT

SQUARE

ENHANCEMENT MODE

1

82 A

109 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.038 ohm

6.1 A

DUAL

S-PDSO-F8

1

DRAIN

e3

30

260

3.2 pF

AEC-Q101

NVMFWD040N10MCLT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

36 W

PLASTIC/EPOXY

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

78 A

111 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.039 ohm

21 A

DUAL

R-PDSO-F8

DRAIN

3.5 pF

AEC-Q101

NVMFS040N10MCLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

PLASTIC/EPOXY

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

94 A

109 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.038 ohm

21 A

DUAL

R-PDSO-F6

1

DRAIN

e3

30

260

3.7 pF

AEC-Q101

NVTFS040N10MCLTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

PLASTIC/EPOXY

100 V

FLAT

SQUARE

ENHANCEMENT MODE

1

82 A

109 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.038 ohm

6.1 A

DUAL

S-PDSO-F8

DRAIN

NOT SPECIFIED

NOT SPECIFIED

3.2 pF

AEC-Q101

NVMFWS040N10MCLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

PLASTIC/EPOXY

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

94 A

109 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.038 ohm

21 A

DUAL

R-PDSO-F6

1

DRAIN

e3

30

260

3.7 pF

AEC-Q101

NVMFD040N10MCLT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

36 W

PLASTIC/EPOXY

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

78 A

111 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.039 ohm

21 A

DUAL

R-PDSO-F8

DRAIN

10

260

3.5 pF

AEC-Q101

FCPF11N65

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

36 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33 A

340 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

285 ns

-55 Cel

370 ns

Matte Tin (Sn) - annealed

.38 ohm

11 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

63 pF

PHB11N06LT

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

41 A

25 mJ

11 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.15 ohm

10.3 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

245

BUK72150-55A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

44 A

16 mJ

11 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.15 ohm

11 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

BUK92150-55A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

44 A

16 mJ

11 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.155 ohm

11 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252

e3

30

260

BUK72150-55A,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

44 A

6.4 mJ

11 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.15 ohm

11 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

BUK92150-55A,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

44 A

16 mJ

11 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.155 ohm

11 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

BSF083N03LQG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

METAL

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

212 A

30 mJ

53 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0142 ohm

13 A

BOTTOM

R-MBCC-N3

3

DRAIN

Not Qualified

AVALANCHE RATED

e3

260

IRHLNM83Y20SCS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

UNSPECIFIED

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

68 A

37 mJ

17 A

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

174 ns

-55 Cel

50 ns

.015 ohm

17 A

BOTTOM

R-XBCC-N3

DRAIN

RADIATION HARDENED

MIL-19500

IRHLNM83Y20

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

UNSPECIFIED

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

68 A

37 mJ

17 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

174 ns

-55 Cel

50 ns

.015 ohm

17 A

BOTTOM

R-XBCC-N3

DRAIN

RADIATION HARDENED

NOT SPECIFIED

NOT SPECIFIED

RH - 300K Rad(Si)

IRHLNM87Y20

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

UNSPECIFIED

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

68 A

37 mJ

17 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

174 ns

-55 Cel

50 ns

.015 ohm

17 A

BOTTOM

R-XBCC-N3

DRAIN

RADIATION HARDENED

NOT SPECIFIED

NOT SPECIFIED

RH - 100K Rad(Si)

IPD220N06L3GATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

13 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.022 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

16 pF

IPD30N06S4L-23

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

18 mJ

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.023 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

260

IPP230N06L3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

36 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

13 mJ

30 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.023 ohm

30 A

SINGLE

R-PSFM-T3

3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

260

IPB260N06N3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

108 A

13 mJ

27 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0257 ohm

27 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

245

BSC094N06LS5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

188 A

13 mJ

47 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.0094 ohm

47 A

DUAL

R-PDSO-F8

1

DRAIN

e3

21 pF

IRF711

Infineon Technologies

N-CHANNEL

SINGLE

NO

36 W

PLASTIC/EPOXY

350 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

5 A

2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN OVER NICKEL

3.6 ohm

2 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

BSZ100N06NS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

160 A

19 mJ

40 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.01 ohm

40 A

DUAL

S-PDSO-N3

1

DRAIN

e3

32 pF

IRF6712TR1PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

130 A

13 mJ

68 A

2

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0049 ohm

17 A

BOTTOM

R-XBCC-N2

DRAIN

Not Qualified

40

260

BSC0704LS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

188 A

13 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.0094 ohm

47 A

DUAL

R-PDSO-F8

1

DRAIN

e3

21 pF

IEC-61249-2-21; IEC-68-1

IPB230N06L3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

13 mJ

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.023 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-263AB

e3

245

IPD250N06N3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

112 A

13 mJ

28 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.025 ohm

28 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

260

IPA040N06NM5S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

36 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

288 A

77 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.004 ohm

72 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

28 pF

IPA083N10NM5S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

36 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

200 A

83 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0083 ohm

50 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

16 pF

BSZ099N06LS5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

184 A

19 mJ

46 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.0099 ohm

46 A

DUAL

S-PDSO-N3

1

DRAIN

e3

26 pF

IRF6712STR1PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

130 A

13 mJ

68 A

3

CHIP CARRIER

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

SILVER NICKEL

.0049 ohm

17 A

BOTTOM

R-XBCC-N3

3

DRAIN

Not Qualified

e4

30

260

IPP260N06N3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

36 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

108 A

13 mJ

27 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.026 ohm

27 A

SINGLE

R-PSFM-T3

1

Not Qualified

TO-220AB

e3

BSZ0704LS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

160 A

19 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Tin (Sn)

.0099 ohm

40 A

DUAL

S-PDSO-N8

1

DRAIN

e3

26 pF

IEC-61249-2-21; IEC-68-1

IPD220N06L3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

13 mJ

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.022 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252AA

e3

260

IRF6712SPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

36 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

130 A

13 mJ

68 A

2

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.0049 ohm

17 A

BOTTOM

R-XBCC-N2

DRAIN

Not Qualified

e1

MP6404

Toshiba

N-CHANNEL AND P-CHANNEL

COMPLEX

NO

36 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

6

20 A

129 mJ

5 A

12

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.32 ohm

5 A

SINGLE

R-PSIP-T12

ISOLATED

Not Qualified

TK5R3A06PL

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

36 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

280 A

29 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0053 ohm

62 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

50 pF

TK110A10PL

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

36 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

35 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0108 ohm

41 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

22 pF

MP4711

Toshiba

N-CHANNEL

COMPLEX

NO

36 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

4

20 A

180 mJ

5 A

12

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.3 ohm

5 A

SINGLE

R-PSFM-T12

ISOLATED

Not Qualified

e0

TK5R3A06PL,S4X(S

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

36 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

280 A

29 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0053 ohm

62 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

50 pF

TK110A10PL,S4X(S

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

36 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

35 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0108 ohm

41 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

22 pF

2SK3919-ZK-E1

Renesas Electronics

N-CHANNEL

SINGLE

YES

36 W

ENHANCEMENT MODE

1

64 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

64 A

2SK3365-Z-E1

Renesas Electronics

N-CHANNEL

SINGLE

YES

36 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

30 A

2SK3365(0)-Z-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

36 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

30 A

2SK3642-ZK-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

36 W

ENHANCEMENT MODE

1

64 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

64 A

10

260

2SK3365(0)-Z-E2-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

36 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

30 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.