
Image shown is a representation only.
Manufacturer | Infineon Technologies |
---|---|
Manufacturer's Part Number | IRHLNM83Y20SCS |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 36 W; Maximum Turn Off Time (toff): 50 ns; No. of Elements: 1; |
Datasheet | IRHLNM83Y20SCS Datasheet |
In Stock | 380 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | UNSPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Turn On Time (ton): | 174 ns |
Maximum Drain Current (ID): | 17 A |
Maximum Pulsed Drain Current (IDM): | 68 A |
Surface Mount: | YES |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 36 W |
Terminal Position: | BOTTOM |
Package Style (Meter): | CHIP CARRIER |
Maximum Turn Off Time (toff): | 50 ns |
JESD-30 Code: | R-XBCC-N3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | NO LEAD |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .015 ohm |
Avalanche Energy Rating (EAS): | 37 mJ |
Polarity or Channel Type: | N-CHANNEL |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 20 V |
Additional Features: | RADIATION HARDENED |
Reference Standard: | MIL-19500 |
Maximum Drain Current (Abs) (ID): | 17 A |