37 W Power Field Effect Transistors (FET) 88

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
NVTFS4C06NWFTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY		30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	367 A	34 mJ	71 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0061 ohm	71 A	DUAL	S-PDSO-F5	1	DRAIN				e3	30	260		AEC-Q101
NVTFS4C06NWFTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY		30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	367 A	34 mJ	71 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0061 ohm	71 A	DUAL	S-PDSO-F5	1	DRAIN				e3	30	260		AEC-Q101
NVTFS4C06NTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY		30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	367 A	34 mJ	71 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0061 ohm	71 A	DUAL	S-PDSO-F5	1	DRAIN				e3	30	260		AEC-Q101
NVTFS4C06NTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY		30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	367 A	34 mJ	71 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0061 ohm	71 A	DUAL	S-PDSO-F5	1	DRAIN				e3	30	260		AEC-Q101
FDPC8014AS	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	1116 A	294 mJ	159 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	41 ns	-55 Cel	86 ns	MATTE TIN	.001 ohm	159 A	DUAL	R-PDSO-N8	1					e3	30	260	245 pF
IRLHM630TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	160 A	80 mJ	21 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0045 ohm	21 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified			e3	40	260
BUK9Y59-60E,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	37 W						ENHANCEMENT MODE	1			16.7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					TIN		16.7 A			1					e3	30	260
BUK9Y107-80EX	NXP Semiconductors	N-CHANNEL	SINGLE	YES	37 W						ENHANCEMENT MODE	1			11.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							11.8 A
BUK9Y29-40E,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	37 W						ENHANCEMENT MODE	1			25 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					TIN		25 A			1					e3	30	260
FQD5N20LTM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15.2 A	60 mJ	3.8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.25 ohm	3.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
IPD95R2K0P7ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY	SWITCHING	950 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	6 mJ	4 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	2 ohm	4 A	SINGLE	R-PSSO-G2	1				TO-252	e3
NTMFD5C674NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	119 A	61 mJ	42 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0204 ohm	11 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260	7.7 pF
IRLHM620TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	160 A	120 mJ	26 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0035 ohm	26 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified	HIGH RELIABILITY		e3	30	260
BUK9Y153-100E,115	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	38 A	9.5 mJ	9.4 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Tin (Sn)	.153 ohm	9.4 A	SINGLE	R-PSSO-G4	1	DRAIN		AVALANCHE RATED	MO-235	e3	30	260		AEC-Q101; IEC-60134
IRFIZ24GPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	37 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A	100 mJ	14 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.1 ohm	14 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3	30	260	79 pF
BUK9Y29-40E	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	101 A	8.77 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN	.029 ohm	25 A	SINGLE	R-PSSO-G4	1	DRAIN		AVALANCHE RATED	MO-235	e3	30	260	68 pF	AEC-Q101; IEC-60134
FDD8451	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	78 A	20 mJ	28 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.024 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
IRFHM8326TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	278 A	58 mJ	70 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0067 ohm	19 A	DUAL	S-PDSO-N8	1	DRAIN
IXFP22N65X2M	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	37 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	1000 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.145 ohm	22 A	SINGLE	R-PSFM-T3		ISOLATED		AVALANCHE RATED	TO-220AB				1.3 pF
BSZ0904NSIATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	160 A	20 mJ	40 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.0057 ohm	18 A	DUAL	R-PDSO-N8	1	DRAIN				e3
IRFHM830TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	160 A	82 mJ	40 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.006 ohm	21 A	DUAL	S-PDSO-N8	1	DRAIN	Not Qualified			e3	40	260
IRFI9Z24GPBF	Vishay Intertechnology	P-CHANNEL	SINGLE	NO	37 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	34 A	200 mJ	8.5 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn)	.28 ohm	8.5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3	30	260
NVMFS5C677NLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	166 A	65 mJ	36 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0215 ohm	36 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260		AEC-Q101
NTPF125N65S3H	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	37 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	67 A	216 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.125 ohm	24 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3
NTMYS014N06CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	185 A	65 mJ	36 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0215 ohm	12 A	SINGLE	R-PSSO-G4	1	DRAIN				e3	30	260
NVTYS015N06CL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY		60 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	166 A	65 mJ	36 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.0215 ohm	36 A	DUAL	R-PDSO-X5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	7 pF	AEC-Q101
NVTYS016N06CTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY		60 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	166 A	65 mJ	36 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.015 ohm	36 A	DUAL	R-PDSO-X5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	7 pF	AEC-Q101
BFL4036	Onsemi	N-CHANNEL	SINGLE	NO	37 W						ENHANCEMENT MODE	1			9.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							9.6 A
2SK4118LS	Onsemi	N-CHANNEL	SINGLE	NO	37 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							18 A
2SK4088LS-1E	Onsemi	N-CHANNEL	SINGLE	NO	37 W						ENHANCEMENT MODE	1			11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN		11 A								e3
BFL4036-1E	Onsemi	N-CHANNEL	SINGLE	NO	37 W							1			14 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN		14 A								e3
FQD4N25TM-WS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	52 mJ	3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.75 ohm	3 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260
NVMYS014N06CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	185 A	65 mJ	36 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0215 ohm	12 A	SINGLE	R-PSSO-G4	1	DRAIN				e3	30	260		AEC-Q101
NTMFS5C677NLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	166 A	65 mJ	36 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0215 ohm	36 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260
NVMFS5C466NLWFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	238.6 A	65 mJ	52 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.012 ohm	52 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	15 pF	AEC-Q101
NVMFS5C677NLWFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	166 A	65 mJ	36 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0215 ohm	36 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260		AEC-Q101
FDPF33N25TRDTU	Onsemi	N-CHANNEL	SINGLE	NO	37 W							1			33 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					MATTE TIN		33 A								e3
NVMFS5C466NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	226 A	70 mJ	49 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0081 ohm	49 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	15 pF	AEC-Q101
NVMFS5C466NLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	238.6 A	65 mJ	52 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.012 ohm	52 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	15 pF	AEC-Q101
FDPF39N20	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	37 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	156 A	860 mJ	39 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.066 ohm	39 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	FAST SWITCHING	TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
NVMFS5C466NWFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	226 A	70 mJ	49 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0081 ohm	49 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	15 pF	AEC-Q101
FDPF39N20TLDTU	Onsemi	N-CHANNEL	SINGLE	NO	37 W							1			39 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					MATTE TIN		39 A								e3
FDMQ8203	Onsemi	N-CHANNEL AND P-CHANNEL	2 BANKS, COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	37 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	4	12 A		6 A	12	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD SILVER	.11 ohm	3.4 A	DUAL	R-PDSO-N12	1	DRAIN				e4	30	260
PHX8ND50E	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	37 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	34 A	510 mJ	4.2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	37 W	150 Cel	SILICON					.85 ohm	4.2 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	FREDFET, FAST SWITCHING	TO-220AB
BUK7Y29-40EX	NXP Semiconductors	N-CHANNEL	SINGLE	YES	37 W						ENHANCEMENT MODE	1			26 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							26 A
BUK7Y59-60EX	NXP Semiconductors	N-CHANNEL	SINGLE	YES	37 W						ENHANCEMENT MODE	1			17 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							17 A
PSMN017-30LL,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	37 W						ENHANCEMENT MODE	1			15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							15 A
BUK7Y98-80EX	NXP Semiconductors	N-CHANNEL	SINGLE	YES	37 W						ENHANCEMENT MODE	1			12.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							12.1 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.