37 W Power Field Effect Transistors (FET) 88

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

ISC037N03L5IS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

37 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

312 A

14 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.0052 ohm

66 A

DUAL

R-PDSO-F8

1

DRAIN

e3

64 pF

IEC-61249-2-21; IEC-68-1

IPU80R1K2P7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

37 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

11 A

10 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

1.2 ohm

4.5 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

e3

ISZ040N03L5IS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

37 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

160 A

20 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.0057 ohm

40 A

DUAL

S-PDSO-N8

1

DRAIN

e3

64 pF

IEC-61249-2-21; IEC-68-1

IPLK80R1K4P7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

37 W

PLASTIC/EPOXY

SWITCHING

800 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

8.9 A

8 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

1.4 ohm

4 A

DUAL

R-PDSO-F8

DRAIN

e3

IPS80R1K2P7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

37 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

11 A

10 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

1.2 ohm

4.5 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

e3

IPU95R2K0P7AKMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

37 W

PLASTIC/EPOXY

SWITCHING

950 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

6 mJ

4 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

2 ohm

4 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

e3

IPS65R950C6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

37 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

50 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.95 ohm

4.5 A

SINGLE

R-PSIP-T3

TO-251

e3

IPU95R2K0P7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

37 W

PLASTIC/EPOXY

SWITCHING

950 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

6 mJ

4 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

2 ohm

4 A

SINGLE

R-PSIP-T3

TO-251

e3

IRFI9Z34N

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

37 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

68 A

180 mJ

14 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.1 ohm

14 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

e0

IPB60R950C6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

37 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

46 mJ

4.4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.95 ohm

4.4 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

245

IPP60R950C6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

37 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

46 mJ

4.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.95 ohm

4.4 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

260

BSZ0904NSI

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

37 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

300 A

20 mJ

40 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.0057 ohm

75 A

DUAL

S-PDSO-N8

1

DRAIN

e3

64 pF

IPD95R2K0P7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

37 W

PLASTIC/EPOXY

SWITCHING

950 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

6 mJ

4 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

2 ohm

4 A

SINGLE

R-PSSO-G2

1

TO-252

e3

260

IRLHM630TR2PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

37 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

160 A

80 mJ

21 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0045 ohm

21 A

DUAL

S-PDSO-N5

1

DRAIN

Not Qualified

e3

IRFIZ34N

Infineon Technologies

N-CHANNEL

SINGLE

NO

37 W

1

21 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

21 A

NOT SPECIFIED

NOT SPECIFIED

BSZ036NE2LS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

37 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

316 A

40 mJ

40 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

2.1 W

150 Cel

SILICON

-55 Cel

TIN

.0051 ohm

16 A

DUAL

S-PDSO-N8

1

DRAIN

e3

51 pF

AUIRFIZ34N

Infineon Technologies

N-CHANNEL

SINGLE

NO

37 W

1

21 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

21 A

IRFHM830DTRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

37 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

160 A

82 mJ

40 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0071 ohm

20 A

DUAL

S-PDSO-N8

1

DRAIN

Not Qualified

IRFHM830DTR2PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

37 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

160 A

82 mJ

40 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0071 ohm

20 A

DUAL

S-PDSO-N8

1

DRAIN

Not Qualified

e3

IPD60R950C6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

37 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

46 mJ

4.4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.95 ohm

4.4 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

260

BSC0904NSI

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

37 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

312 A

14 mJ

78 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0052 ohm

20 A

DUAL

R-PDSO-F8

1

DRAIN

e3

IRFHM830TR2PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

37 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

160 A

82 mJ

40 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.006 ohm

21 A

DUAL

S-PDSO-N8

1

DRAIN

Not Qualified

e3

IRLHM620TR2PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

37 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

160 A

120 mJ

26 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0035 ohm

26 A

DUAL

S-PDSO-N5

1

DRAIN

Not Qualified

HIGH RELIABILITY

e3

BSC032NE2LS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

37 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

336 A

20 mJ

84 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0048 ohm

22 A

DUAL

R-PDSO-N8

1

DRAIN

e3

IRFI9Z34NPBF

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

37 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

68 A

180 mJ

14 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.1 ohm

14 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-220AB

e3

BSZ0910LS

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

37 W

PLASTIC/EPOXY

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

160 A

20 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.0057 ohm

40 A

DUAL

S-PDSO-N8

1

DRAIN

e3

64 pF

IEC-61249-2-21; IEC-68-1

IPS65R950C6AKMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

37 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

50 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.95 ohm

4.5 A

SINGLE

R-PSIP-T3

TO-251

e3

NP30N06ILD

Renesas Electronics

N-CHANNEL

SINGLE

YES

37 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

30 A

UPA2700TP

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

37 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

48.4 mJ

20 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0084 ohm

20 A

DUAL

R-PDSO-G8

Not Qualified

e0

NP30N06HLD

Renesas Electronics

N-CHANNEL

SINGLE

NO

37 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

30 A

UPA2700TP-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

37 W

1

42 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

42 A

260

UPA2700TP-E2-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

37 W

1

42 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

42 A

260

UPA2700TP-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

37 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

48.4 mJ

20 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0084 ohm

20 A

DUAL

R-PDSO-G8

Not Qualified

e6

10

260

IXTP24N65X2M

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

37 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

600 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.145 ohm

24 A

SINGLE

R-PSFM-T3

ISOLATED

AVALANCHE RATED

TO-220AB

1.2 pF

SSS15N06

Samsung

N-CHANNEL

SINGLE

NO

37 W

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

14 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.084 ohm

14 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

IRLW510A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

37 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

62 mJ

5.6 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.44 ohm

5.6 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

SSS15N05

Samsung

N-CHANNEL

SINGLE

NO

37 W

PLASTIC/EPOXY

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

14 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.084 ohm

14 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

IRLSZ34A

Samsung

N-CHANNEL

SINGLE

NO

37 W

ENHANCEMENT MODE

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

20 A

IRLI510A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

37 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

62 mJ

5.6 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.44 ohm

5.6 A

SINGLE

R-PSIP-T3

Not Qualified

IRL510A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

37 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

62 mJ

5.6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.44 ohm

5.6 A

SINGLE

R-PSFM-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.