Image shown is a representation only.
| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IRFIZ34N |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 37 W; Maximum Drain Current (ID): 21 A; No. of Elements: 1; |
| Datasheet | IRFIZ34N Datasheet |
| In Stock | 124 |
| NAME | DESCRIPTION |
|---|---|
| Maximum Power Dissipation (Abs): | 37 W |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| No. of Elements: | 1 |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain Current (ID): | 21 A |
| Maximum Drain Current (Abs) (ID): | 21 A |
| Sub-Category: | FET General Purpose Power |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |









