46 W Power Field Effect Transistors (FET) 77

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
SI7938DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	46 W	UNSPECIFIED	SWITCHING	40 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	80 A	88.2 mJ	60 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.0058 ohm	18.5 A	DUAL	R-XDSO-C6	1	DRAIN	Not Qualified			e3	40	260
SI7997DP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	46 W	UNSPECIFIED		30 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	100 A	45 mJ	60 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0078 ohm	60 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified			e3	40	260
FCPF067N65S3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	46 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	110 A	214 mJ	44 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.067 ohm	44 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
SI7884BDP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	50 A	54 mJ	58 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	66 ns	-55 Cel	77 ns	Matte Tin (Sn) - annealed	.0075 ohm	58 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified			e3	30	260	142 pF
BSZ065N06LS5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	160 A	38 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	.0065 ohm	40 A	DUAL	S-PDSO-N8	1	DRAIN				e3			28 pF
IRFH5406TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	160 A	45 mJ	40 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0144 ohm	11 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified			e3	30	260
BSZ068N06NSATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	160 A	43 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	.0068 ohm	40 A	DUAL	S-PDSO-N8	1	DRAIN				e3			38 pF
NTMFS5C673NLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	290 A	81 mJ	50 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.013 ohm	50 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260
IRFI4229PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	46 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	72 A	110 mJ	19 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN OVER NICKEL	.046 ohm	19 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
SI7884BDP-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	50 A	54 mJ	58 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	66 ns	-55 Cel	77 ns	Matte Tin (Sn) - annealed	.0075 ohm	58 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified			e3	30	260	142 pF
SUD19P06-60L-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	24.2 mJ	19 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.06 ohm	19 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
FDMS0312S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	90 A	60 mJ	83 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.0044 ohm	19 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified		MO-240AA	e3	30	260
IRFH5406TR2PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	160 A	45 mJ	40 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0144 ohm	11 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified			e3
IRFR5505TR	International Rectifier	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	64 A	150 mJ	16 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.11 ohm	18 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	TO-252AA	e0
SI7994DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	46 W	UNSPECIFIED	SWITCHING	30 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	60 A		60 A	6	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0056 ohm	20 A	DUAL	R-XDSO-C6	1	DRAIN	Not Qualified			e3	30	260
SI7234DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	46 W	UNSPECIFIED	SWITCHING	12 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	2	80 A		60 A	6	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	.005 ohm	24.8 A	DUAL	R-XDSO-C6	1	DRAIN	Not Qualified			e3	30	260
IRFI4321PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	46 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A	170 mJ	34 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN OVER NICKEL	.016 ohm	34 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
NTMFS5C673NLT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	290 A	81 mJ	50 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.013 ohm	50 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260
BUK9V13-40HX	Nexperia	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY	SWITCHING	40 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	2	169 A	10.6 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Tin (Sn)	.0169 ohm	42 A	DUAL	R-PDSO-X8	1			HIGH RELIABILITY		e3			84 pF	AEC-Q101; IEC-60134
IRFH5304TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	320 A	46 mJ	79 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0068 ohm	22 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified			e3	30	260
NDD01N60T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	13 mJ	1.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	8.5 ohm	1.5 A	SINGLE	R-PSSO-G2	3	DRAIN				e3
NVTYS010N06CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY		60 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	290 A	88 mJ	13 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.015 ohm	13 A	DUAL	R-PDSO-X5	1	DRAIN				e3	30	260	11 pF	AEC-Q101
NTMYS9D3N06CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	290 A	88 mJ	50 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.013 ohm	50 A	SINGLE	R-PSSO-G4	1	DRAIN				e3	30	260	11 pF
NDD01N60-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	46 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6 A	13 mJ	1.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	8.5 ohm	1.5 A	SINGLE	R-PSIP-T3	3	DRAIN				e3
NVTYS020N08HLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY		80 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	119 A	138 mJ	8 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.0211 ohm	8 A	DUAL	R-PDSO-X5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	4.2 pF	AEC-Q101
NVMFS5C673NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	290 A	81 mJ	50 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0107 ohm	50 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	6 pF	AEC-Q101
NVTFWS027N10MCLTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY		100 V	FLAT	SQUARE	ENHANCEMENT MODE	1	119 A	414 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.026 ohm	28 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	250	4 pF	AEC-Q101
NTMFS5C673NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	290 A	81 mJ	50 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0107 ohm	50 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	6 pF
NVTFS6H860NTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY		80 V	FLAT	SQUARE	ENHANCEMENT MODE	1	119 A	138 mJ	8 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0211 ohm	8 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	4.2 pF	AEC-Q101
NVMFS5C673NWFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	290 A	81 mJ	50 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0107 ohm	50 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	6 pF	AEC-Q101
NVMFWS027N10MCLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY		100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	137 A	414 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.026 ohm	28 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	4 pF	AEC-Q101
NVMYS9D3N06CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	290 A	88 mJ	50 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.013 ohm	50 A	SINGLE	R-PSSO-G4	1	DRAIN				e3	30	260	11 pF	AEC-Q101
NVTFS027N10MCLTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY		100 V	FLAT	SQUARE	ENHANCEMENT MODE	1	119 A	414 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.026 ohm	28 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	4 pF	AEC-Q101
NTTFS6H860NTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY		80 V	FLAT	SQUARE	ENHANCEMENT MODE	1	119 A	138 mJ	30 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0339 ohm	30 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	4.2 pF
NVTFS6H860NWFTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY		80 V	FLAT	SQUARE	ENHANCEMENT MODE	1	119 A	138 mJ	8 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0211 ohm	8 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	4.2 pF	AEC-Q101
FDMS7572S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY	SWITCHING	25 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	150 A	84 mJ	105 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0029 ohm	23 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified		MO-240AA	e3	30	260
FDMS7672AS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	90 A	60 mJ	83 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.004 ohm	19 A	DUAL	R-XDSO-N5	1	DRAIN	Not Qualified			e3	30	260
STD2NM60-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	46 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A	250 mJ	2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	3.2 ohm	2 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-251	e3
STL9N65M2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	UNSPECIFIED	SWITCHING	650 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	12 A	95 mJ	4.5 A	12	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			1 ohm	4.5 A	QUAD	S-XQCC-N12
STD3NM50T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	130 mJ	3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	3 ohm	3 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252AA	e3
STD3NM50-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	46 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	130 mJ	3 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	3 ohm	3 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-251AA	e3
STD3NM50	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	130 mJ	3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	3 ohm	3 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252AA	e3
STD2NM60T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	250 mJ	2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	3.2 ohm	2 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252	e3
STD2NM60	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	250 mJ	2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	3.2 ohm	2 A	SINGLE	R-PSSO-G2			Not Qualified		TO-252	e3
PSMN9R0-30YL	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	223 A	16 mJ	55 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Tin (Sn)	.01103 ohm	61 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified		MO-235	e3	30	260
PSMN9R0-30YL,115	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	46 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	223 A	16 mJ	61 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin (Sn)	.0138 ohm	55 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified		MO-235	e3	30	260
IPI14N03LA	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	46 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	210 A	60 mJ	30 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0139 ohm	30 A	SINGLE	R-PSIP-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-262AA	e3
IPU13N03LAG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	46 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	210 A	60 mJ	30 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0128 ohm	30 A	SINGLE	R-PSIP-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-251AA	e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.