53 W Power Field Effect Transistors (FET) 29

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

SQ7415CENW-T1_GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

53 W

PLASTIC/EPOXY

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

64 A

26 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

24 ns

-55 Cel

72 ns

.065 ohm

16 A

DUAL

S-PDSO-F8

DRAIN

105 pF

AEC-Q101

FQB11P06TM

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

53 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

45.6 A

160 mJ

11.4 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.175 ohm

11.4 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

245

FQP20N06L

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

53 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

84 A

170 mJ

21 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.07 ohm

21 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

IPSA70R1K4CEAKMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

53 W

PLASTIC/EPOXY

SWITCHING

700 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

8.3 A

26 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

1.4 ohm

5.4 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

e3

BUK7K17-60EX

NXP Semiconductors

N-CHANNEL

YES

53 W

ENHANCEMENT MODE

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

30 A

1

e3

30

260

RFD3055SM

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

53 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.15 ohm

12 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

260

RFD3055SM9A

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

53 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.15 ohm

12 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

IPD60R280P7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

53 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

38 mJ

12 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.28 ohm

12 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

IPD60R280P7S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

53 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

38 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

.28 ohm

12 A

SINGLE

R-PSSO-G2

3

TO-252

e3

SQ7415AENW-T1_GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

53 W

PLASTIC/EPOXY

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

64 A

26 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

28 ns

-55 Cel

68 ns

.065 ohm

16 A

DUAL

S-PDSO-F8

DRAIN

NOT SPECIFIED

NOT SPECIFIED

105 pF

AEC-Q101

FQP20N06

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

53 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

155 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.06 ohm

20 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

FQPF16N15

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

53 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

46.4 A

230 mJ

11.6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.16 ohm

11.6 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e3

FQP11P06

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

53 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

45.6 A

160 mJ

11.4 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.175 ohm

11.4 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

BUK95150-55A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

53 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

53 A

25 mJ

13 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.161 ohm

13 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

BUK95150-55A,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

53 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

53 A

25 mJ

13 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.161 ohm

13 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

BUK96150-55A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

53 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

53 A

25 mJ

13 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.161 ohm

13 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

245

BUK9K45-100E,115

NXP Semiconductors

N-CHANNEL

YES

53 W

ENHANCEMENT MODE

21 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

21 A

1

e3

30

260

IPI25N06S3L-21

Infineon Technologies

N-CHANNEL

SINGLE

NO

53 W

ENHANCEMENT MODE

1

25 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

25 A

IPSA70R1K4CE

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

53 W

PLASTIC/EPOXY

SWITCHING

700 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

8.3 A

26 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

1.4 ohm

5.4 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

e3

IPS70R1K4CEAKMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

53 W

PLASTIC/EPOXY

SWITCHING

700 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

8.3 A

26 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

1.4 ohm

5.4 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

e3

IPS70R1K4CE

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

53 W

PLASTIC/EPOXY

SWITCHING

700 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

8.3 A

26 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

1.4 ohm

5.4 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

e3

IPD70R1K4CEAUMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

53 W

PLASTIC/EPOXY

SWITCHING

700 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8.3 A

26 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

1.4 ohm

5.4 A

SINGLE

R-PSSO-G2

3

DRAIN

TO-252

e3

IPB25N06S3L-21

Infineon Technologies

N-CHANNEL

SINGLE

YES

53 W

ENHANCEMENT MODE

1

25 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

25 A

IPD70R1K4CE

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

53 W

PLASTIC/EPOXY

SWITCHING

700 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8.3 A

26 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

1.4 ohm

5.4 A

SINGLE

R-PSSO-G2

3

DRAIN

TO-252

e3

IPP25N06S3L-21

Infineon Technologies

N-CHANNEL

SINGLE

NO

53 W

ENHANCEMENT MODE

1

25 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

25 A

PSMN038-100HS

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

53 W

PLASTIC/EPOXY

SWITCHING

100 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

84 A

46 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0376 ohm

21.4 A

DUAL

R-PDSO-X8

1

DRAIN

e3

30

260

115 pF

IEC-60134

LZPF7N60

Diodes Incorporated

N-CHANNEL

SINGLE

NO

53 W

ENHANCEMENT MODE

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

7 A

TK30E06N1

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

53 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

95 A

38 mJ

43 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.015 ohm

43 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

SFS9540

Samsung

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

53 W

PLASTIC/EPOXY

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

43 A

229 mJ

11 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.2 ohm

10.7 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.