Vishay Intertechnology - SQ7415CENW-T1_GE3

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SQ7415CENW-T1_GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SQ7415CENW-T1_GE3
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 53 W; Avalanche Energy Rating (EAS): 26 mJ; Package Shape: SQUARE;
Datasheet SQ7415CENW-T1_GE3 Datasheet
In Stock9,456
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton): 24 ns
Maximum Drain Current (ID): 16 A
Maximum Pulsed Drain Current (IDM): 64 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 53 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 72 ns
JESD-30 Code: S-PDSO-F8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .065 ohm
Avalanche Energy Rating (EAS): 26 mJ
Maximum Feedback Capacitance (Crss): 105 pF
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Reference Standard: AEC-Q101
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