55 W Power Field Effect Transistors (FET) 178

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
STD17N06L-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	55 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	68 A	60 mJ	17 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			TIN LEAD	.085 ohm	17 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-251AA	e0
STD17N06	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	60 mJ	17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			MATTE TIN	.085 ohm	17 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252AA	e3
STD17N06T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	60 mJ	17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			MATTE TIN	.085 ohm	17 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3
STD35NF06	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A	130 mJ	35 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			MATTE TIN	.024 ohm	35 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252AA	e3
STL13N60M2	STMicroelectronics	N-CHANNEL	SINGLE	YES	55 W							1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						7 A									NOT SPECIFIED	NOT SPECIFIED
STD30NE06T4	STMicroelectronics	N-CHANNEL	SINGLE	YES	55 W						ENHANCEMENT MODE	1			30 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel				TIN LEAD		30 A								e0
STD17N06-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	55 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	68 A	60 mJ	17 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.085 ohm	17 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-251AA
STD17N05L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	60 mJ	17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			MATTE TIN	.085 ohm	17 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252AA	e3
STD7NB20T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A	100 mJ	7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			MATTE TIN	.4 ohm	7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3
STD17N05L-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	55 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	68 A	60 mJ	17 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			Tin/Lead (Sn/Pb)	.085 ohm	17 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-251AA	e0
STD17N05T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	60 mJ	17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			MATTE TIN	.085 ohm	17 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252AA	e3
STD17N05-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	55 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	68 A	60 mJ	17 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			Tin/Lead (Sn/Pb)	.085 ohm	17 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-251AA	e0
STD2NC70Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	700 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9.2 A	165 mJ	2.3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			MATTE TIN	4.7 ohm	2.3 A	SINGLE	R-PSSO-G2			Not Qualified		TO-252	e3
STD17N05LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	60 mJ	17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			MATTE TIN	.085 ohm	17 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252AA	e3
STD2NC70Z-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	55 W	PLASTIC/EPOXY	SWITCHING	700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	9.2 A	165 mJ	2.3 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				4.7 ohm	2.3 A	SINGLE	R-PSIP-T3			Not Qualified		TO-251
STD6NC40T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	320 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			MATTE TIN	1 ohm	5 A	SINGLE	R-PSSO-G2			Not Qualified		TO-252	e3
IRFP240FI	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	55 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	50 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	60 W	150 Cel	SILICON	185 ns	190 ns	Tin/Lead (Sn/Pb)	.18 ohm	13 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-218	e0			150 pF
STD16NE10L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	64 A	75 mJ	16 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			TIN LEAD	.1 ohm	16 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252	e0
STD6NC40-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	55 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	320 mJ	5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1 ohm	5 A	SINGLE	R-PSIP-T3			Not Qualified		TO-251
STD2NC70ZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	700 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9.2 A	165 mJ	2.3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			MATTE TIN	4.7 ohm	2.3 A	SINGLE	R-PSSO-G2			Not Qualified		TO-252	e3
STD30NE06LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	100 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			MATTE TIN	.03 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3
STD7NB20-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	55 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A	100 mJ	7 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.4 ohm	7 A	SINGLE	R-PSIP-T3			Not Qualified		TO-251AA
STD17N06L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	68 A	60 mJ	17 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			TIN LEAD	.085 ohm	17 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252AA	e0
PSMN8R5-100XSQ	NXP Semiconductors	N-CHANNEL	SINGLE	NO	55 W						ENHANCEMENT MODE	1			49 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel						49 A
PSMN6R0-30YL	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	292 A	26 mJ	73 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			Tin (Sn)	.00787 ohm	79 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified		MO-235	e3	30	260
PSMN3R9-60XSQ	NXP Semiconductors	N-CHANNEL	SINGLE	NO	55 W						ENHANCEMENT MODE	1			75 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel						75 A
PSMN6R0-30YL,115	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	292 A	26 mJ	79 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			Tin (Sn)	.0097 ohm	73 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified		MO-235	e3	30	260
PSMN5R8-30LL,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	55 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						40 A
SPU02N60	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	55 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A	135 mJ	2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			TIN LEAD	5.5 ohm	2 A	SINGLE	R-PSIP-T3			Not Qualified	AVALANCHE RATED		e0
SPU21N05L	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	55 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	90 mJ	20 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			TIN LEAD	.07 ohm	20 A	SINGLE	R-PSIP-T3			Not Qualified	LOGIC LEVEL COMPATIBLE		e0
SPD23N05	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY		55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	88 A	90 mJ	22 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			TIN LEAD	.05 ohm	22 A	SINGLE	R-PSSO-G2			Not Qualified			e0
SPU23N05	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	55 W	PLASTIC/EPOXY		55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	88 A	90 mJ	22 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			TIN LEAD	.05 ohm	22 A	SINGLE	R-PSIP-T3			Not Qualified			e0
SPD21N05L	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	90 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			TIN LEAD	.07 ohm	20 A	SINGLE	R-PSSO-G2			Not Qualified	LOGIC LEVEL COMPATIBLE		e0
IRLU8729PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	55 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	260 A	74 mJ	58 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			Matte Tin (Sn) - with Nickel (Ni) barrier	.0089 ohm	50 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		TO-251AA	e3	30	260
IRLU8729-701PBF	Infineon Technologies	N-CHANNEL	SINGLE	NO	55 W						ENHANCEMENT MODE	1			58 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel						58 A
BUZ101SE3045	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY		55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	88 A	90 mJ	22 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			MATTE TIN	.05 ohm	22 A	SINGLE	R-PSSO-G2			Not Qualified	AVALANCHE RATED	TO-263AB	e3
SPD02N60	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	135 mJ	2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			TIN LEAD	5.5 ohm	2 A	SINGLE	R-PSSO-G2			Not Qualified	AVALANCHE RATED		e0
BUZ101SL	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	55 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A	90 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			Tin/Lead (Sn/Pb)	.07 ohm	20 A	SINGLE	R-PSFM-T3			Not Qualified	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED	TO-220AB	e0
BUZ101SE3045A	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY		55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	88 A	90 mJ	22 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			TIN LEAD	.05 ohm	22 A	SINGLE	R-PSSO-G2			Not Qualified	AVALANCHE RATED	TO-263AB	e0
BUZ101S	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	55 W	PLASTIC/EPOXY		55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	88 A	90 mJ	22 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			TIN LEAD	.05 ohm	22 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB	e0
BUZ101SLE3045	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	90 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			MATTE TIN	.07 ohm	20 A	SINGLE	R-PSSO-G2			Not Qualified	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED	TO-263AB	e3
IRLR8729PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	260 A	74 mJ	58 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			MATTE TIN OVER NICKEL	.0089 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3
BUZ101SLE3045A	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	90 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			Tin/Lead (Sn/Pb)	.07 ohm	20 A	SINGLE	R-PSSO-G2			Not Qualified	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED	TO-263AB	e0
TK8P25DA	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	45 mJ	7.5 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				.5 ohm	7.5 A	SINGLE	R-PSSO-G2		DRAIN
TPCA8085(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	55 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel						40 A
TPCA8086(TE12L)	Toshiba	N-CHANNEL	SINGLE	YES	55 W						ENHANCEMENT MODE	1			35 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel						35 A
TPCA8085(TE12L1)	Toshiba	N-CHANNEL	SINGLE	YES	55 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel						40 A
TPCA8086(TE12L1,Q)	Toshiba	N-CHANNEL	SINGLE	YES	55 W						ENHANCEMENT MODE	1			35 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel						35 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.